Explanipedia

Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors Open

R. M. Fleming, C. H. Seager, D. V. Lang, John M. Campbell · 2015

In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applie…

Equilibrium state of hydrogen in gallium nitride: Theory and experiment Open

S. M. Myers, A. F. Wright, G. A. Petersen, C. H. Seager, W.R. Wampler , et al. · 2000

Chemistry Materials science Physics

Formation energies and vibration frequencies for H in wurtzite GaN were calculated from density-functional theory and used to predict equilibrium state occupancies and solid solubilities at elevated temperatures for p-type, intrinsic, and …

Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen Open

S. R. Kurtz, Andrew A. Allerman, C. H. Seager, R. M. Sieg, E. D. Jones · 2000

Materials science Physics Computer science

Electron and hole transport in compensated InGaAsN (≈2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and do…

Lattice location of deuterium in plasma and gas charged Mg doped GaN Open

W.R. Wampler, J. C. Barbour, C. H. Seager, Jr Myers, Alan F. Wright , et al. · 1999

Materials science Physics

The authors have used ion channeling to examine the lattice configuration of deuterium in Mg doped GaN grown by MOCVD. The deuterium is introduced both by exposure to deuterium gas and to ECR plasmas. A density functional approach includin…

Infrared and transmission electron microscopy studies of ion-implanted H in GaN Open

C. H. Seager, S. M. Myers, G. A. Petersen, Jung Han, T.J. Headley · 1999

Chemistry Materials science Physics

H and D have been implanted into undoped films of GaN heteroepitaxially grown on sapphire over a dose range from 5×1015 to 5×1017 ions/cm2. After a 600 °C post-implantation anneal, room temperature Fourier-transform-infrared spectroscopy r…

Ion-implanted hydrogen in gallium nitride Open

S. M. Myers, Jung Han, T.J. Headley, C. R. Hills, G. A. Petersen , et al. · 1998

Materials science Chemistry Physics

Hydrogen was ion-implanted into GaN at concentrations ranging over two orders of magnitude, and its states and microstructural effects during annealing up to 1000 C were characterized by nuclear-reaction profiling, ion-channeling analysis,…

Surface charging of phosphors and its effects on cathodoluminescence at low electron energies Open

C. H. Seager, W.L. Warren, D. R. Tallant · 1997

Materials science Chemistry Physics

Measurements of the threshold for secondary electron emission and shifts of the carbon Auger line position have been used to deduce the surface potential of several common phosphors during irradiation by electrons in the 0.5--5.0 keV range…

Ultraviolet light induced annihilation of silicon dangling bonds in hydrogenated amorphous silicon nitride films Open

W. L. Warren, C. H. Seager, Jerzy Kanicki, M. S. Crowder, E. Sigari · 1995

Materials science Chemistry

We report results of electron paramagnetic resonance, photothermal deflection spectroscopy, and capacitance-voltage measurements on amorphous hydrogenated silicon nitride (a-SiNx:H) thin films exposed to ultraviolet (UV) illumination. It h…

Chemical and electrical properties of cavities in silicon and germanium Open

S. M. Myers, D. M. Follstaedt, G. A. Petersen, C. H. Seager, H. J. Stein , et al. · 1994

Materials science Chemistry Physics

Cavities were formed in Si and Ge by He ion implantation and annealing, and resultant chemical and electrical properties were investigated. The dissociation energies for Si-H and Ge-H surface monohydride bonds were determined, showing that…

Characterization of thermally stable dye-doped polyimide based electrooptic materials Open

Michael B. Meinhardt, P.A. Cahill, C. H. Seager, A.J. Beuhler, D.A. Wargowski · 1993

Materials science Engineering Physics

Polymeric electrooptic materials have the potential to replace electronic switches in applications which require minimization of heat dissipation while maintaining high switching speeds. Polyimide matrices incorporating electrooptic dyes a…

Mechanisms for the operation of thin film transistors on ferroelectrics Open

C. H. Seager, D.C. McIntyre, Bruce A. Tuttle, J. T. Evans · 1993

Materials science Computer science Engineering

The electric field emanating from the surface of a poled ferroelectric can control the conduction properties of an overlaying semiconducting film, this combination of materials can thus serve as a non-destructive readout, non-volatile memo…

The structural, chemical, and electrical properties of He-implantation-induced nanocavities in silicon Open

C. H. Seager, S. M. Myers, D.M. Follstaedt, H. J. Stein, W.R. Wampler · 1993

Materials science Chemistry Physics

Si implanted with He to doses of about 2 {times} 10{sup 16}cm{sup {minus}2} and greater and annealed at high temperatures develops a layer of internal nanocavities near the end of the He range. Above an annealing temperature of 700 C, all …

Polyimide-based electrooptic materials Open

Paul A. Cahill, C. H. Seager, Michael B. Meinhardt, Allyson J. Beuhler, David A. Wargowski , et al. · 1993

Materials science Chemistry

The properties of new, high temperature optical materials based on dye-doped Ultradel{reg_sign} 9000D{sup 1} polyimides are presented. Ultradel 9000D is a soluble, pre-imidized, fluorinated polymer with properties optimized for integrated …

Spin dependent photocurrents in ribbon solar cells Open

C. H. Seager, E.L. Venturini, W. K. Schubert · 1992

Materials science Chemistry Physics

Spin Dependent Transport (SDT) is a method of identifying recombination centers which employs a microwave resonance condition to affect the recombination rate of minority carriers in a device. When this technique is used to analyze the dif…

EBIC (Electron Beam Induced Current) contrast of clean, decorated and deuterium passivated Si(Ge) epitaxial misfit dislocations Open

T. Q. Zhou, A. Buczkowski, Z. J. Radzimski, G. A. Rozgonyi, C. H. Seager , et al. · 1991

Materials science Chemistry

The electrical activity of as-grown and intentionally decorated misfit dislocations in an epitaxial Si/Si(Ge) heterostructure was examined using the electron beam induced current (EBIC) technique in a scanning electron microscope. Misfit d…

Minority Carrier Induced Debonding of Hydrogen From Shallow Donors in Silicon Open

C. H. Seager, Robert A. Anderson · 1990

Materials science Chemistry

We have investigated the dissociation of donor-hydrogen pairs in Schottky barrier capacitors fabricated from phosphorus and arsenic doped silicon, at temperatures in the range 24 to 110{degree}C. In equilibrium the release of donor trapped…

Direct measurement of majority-carrier quasi-Fermi levels in Schottky barrier and metal-insulator-semiconductor diodes Open

C. H. Seager, W. K. Schubert · 1987

Materials science Physics

A novel point contact technique for directly measuring Fermi-level variations in biased semiconductor diodes is described. This technique is applied to Al/n-Si and Al/SiO2/p-Si structures, and the results are shown to be in good agreement …

Equilibrium properties of thin-oxide metal-oxide-semiconductor diodes Open

M. A. Butler, C. H. Seager · 1986

Materials science Chemistry Physics

The zero-bias resistance and high frequency capacitance of Al- and Pd-gated thin-oxide metal-oxide-semiconductor diodes have been measured as a function of temperature. The temperature dependence of the semiconductor barrier height is foun…

Fundamental studies of grain boundary passivation in polycrystalline silicon with application to improved photovoltaic devices. A research report covering work completed from February 1981 to January 1982 Open

C. H. Seager, D.S. Ginley · 1982

Materials science Chemistry Physics

Grain boundary barrier heights and other properties were measured on a variety of Wacker poly-Si to test the contention of Redfield that as received samples had no potential barriers and that temperature anneals activate the impurities in …

Erratum: Grain boundary states and varistor behavior in silicon bicrystals Open

C. H. Seager, G. E. Pike · 1980

Materials science Physics Engineering

First Page

Fundamental studies of grain boundary passivation in polycrystalline silicon with application to improved photovoltaic devices. A final research report covering work completed from February-December 1979 Open

C. H. Seager, D.S. Ginley · 1980

Materials science Physics

Several aspects of the electrical properties of silicon grain boundaries have been studied. The temperature dependence of the zero-bias conductance and capacitance of single boundaries has been measured and shown to be in good agreement wi…

Electronic properties of silicon grain boundaries Open

G. E. Pike, C. H. Seager · 1980

Materials science Chemistry Physics

Polycrystalline silicon is a clean and relatively simple prototype of electronic ceramics. The theory of the electrostatic barriers which form at silicon grain boundaries will be discussed. The use of experimental conductance and capacitan…

High-Temperature Measurements of the Electron Hall Mobility in the Alkali Halides Open

C. H. Seager, David Emin · 1971

Materials science Physics Chemistry

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