C. Jagadish
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View article: Near-unity spontaneous emission factor InP surface-emitting lasers based on quasi-bound states in the continuum
Near-unity spontaneous emission factor InP surface-emitting lasers based on quasi-bound states in the continuum Open
Surface-emitting lasers featuring optical bound states in the continuum (BICs) have recently emerged as a promising alternative to vertical cavity surface-emitting lasers. However, structural damage caused by top-down fabrication processes…
View article: Design and Characterization of Low‐Threshold InP Nanowire Photonic Crystal Surface‐Emitting Lasers
Design and Characterization of Low‐Threshold InP Nanowire Photonic Crystal Surface‐Emitting Lasers Open
This study examines the lasing performance of optically pumped wurtzite‐phase InP nanowire (NW) photonic crystal surface‐emitting lasers (PCSELs) with the goal of optimizing the cavity design for low‐threshold lasing. By varying the photon…
View article: Nonlinearity symmetry breaking for generating tunable quantum entanglement in semiconductor metasurfaces
Nonlinearity symmetry breaking for generating tunable quantum entanglement in semiconductor metasurfaces Open
Tunable biphoton quantum entanglement generated from nonlinear flat optics is highly desirable for cutting-edge quantum technologies, yet its tunability is substantially constrained by the symmetry of material nonlinear tensors. Here, we o…
View article: The influence of subwavelength geometry on extracting the electrical properties of semiconductors by terahertz spectroscopy
The influence of subwavelength geometry on extracting the electrical properties of semiconductors by terahertz spectroscopy Open
Terahertz (THz) spectroscopy is a non-contact technique well-suited for probing the ultrafast electrical conductivity of semiconductor nanostructures, where conventional methods are often impractical. However, geometric resonances in these…
View article: Abnormal carrier thermalization dynamics at type-II interface in InP nanomembranes
Abnormal carrier thermalization dynamics at type-II interface in InP nanomembranes Open
Type-II InP wurtzite–zincblende (WZ–ZB) nanostructures are promising in chip-scale photonic interconnects due to their exceptional electron mobility and optoelectronic properties. However, their rise time characteristics, crucial for devic…
View article: InAs nanowire transistor pairs as NMOS inverters
InAs nanowire transistor pairs as NMOS inverters Open
III–V semiconductor nanowires have the potential to play a key role in compact and flexible electronic devices for low-power applications. Here, we integrate pairs of InAs nanowires in an inverter configuration for NMOS logic circuit appli…
View article: Modulation of Nanowire Emitter Arrays Using Micro-LED Technology
Modulation of Nanowire Emitter Arrays Using Micro-LED Technology Open
A scalable excitation platform for nanophotonic emitters using individually addressable micro-LED-on-CMOS arrays is presented. Heterogeneous integration by transfer printing of semiconductor nanowires was used for the deterministic assembl…
View article: Physics-Aware Inverse Design for Nanowire Single-Photon Avalanche Detectors via Deep Learning
Physics-Aware Inverse Design for Nanowire Single-Photon Avalanche Detectors via Deep Learning Open
Single-photon avalanche detectors (SPADs) have enabled various applications in emerging photonic quantum information technologies in recent years. However, despite many efforts to improve SPAD's performance, the design of SPADs remained la…
View article: Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption (Adv. Sci. 8/2025)
Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption (Adv. Sci. 8/2025) Open
Nanolasers Controlled by Ionic Liquids This cover illustration depicts a significant advancement in nanophotonics by utilizing ionic liquid (IL) as a dielectric layer to modulate carrier concentrations in indium phosphide (InP) nanolasers …
View article: Modulation of nanowire emitter arrays using micro-LED technology
Modulation of nanowire emitter arrays using micro-LED technology Open
A scalable excitation platform for nanophotonic emitters using individually addressable micro-LED-on-CMOS arrays is demonstrated for the first time. Heterogeneous integration by transfer-printing of semiconductor nanowires was used for the…
View article: Epitaxially-grown mode-tunable InP micro-ring lasers
Epitaxially-grown mode-tunable InP micro-ring lasers Open
In the near future, technological advances driven by the Fourth Industrial Revolution will boost the demand for integrated, power-efficient miniature lasers, which are important for optical data communications and advanced sensing applicat…
View article: Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption
Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption Open
Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III‐V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with…
View article: Resonance-Amplified Terahertz Near-Field Spectroscopy of a Single Nanowire
Resonance-Amplified Terahertz Near-Field Spectroscopy of a Single Nanowire Open
Nanoscale material systems are central to next-generation optoelectronic and quantum technologies, yet their development remains hindered by limited characterization tools, particularly at terahertz (THz) frequencies. Far-field THz spectro…
View article: Data‐Driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers
Data‐Driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers Open
Active wavelength‐scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light – namely optical lasers – remain the most challenging component to integrate. Semiconductor nanowire lase…
View article: Generation of tunable quantum entanglement via nonlinearity symmetry breaking in semiconductor metasurfaces
Generation of tunable quantum entanglement via nonlinearity symmetry breaking in semiconductor metasurfaces Open
Tunable biphoton quantum entanglement generated from nonlinear processes is highly desirable for cutting-edge quantum technologies, yet its tunability is substantially constrained by the symmetry of material nonlinear tensors. Here, we ove…
View article: Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays
Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays Open
View article: Visualization of incrementally learned projection trajectories for longitudinal data
Visualization of incrementally learned projection trajectories for longitudinal data Open
View article: Nanowire Array Breath Acetone Sensor for Diabetes Monitoring
Nanowire Array Breath Acetone Sensor for Diabetes Monitoring Open
Diabetic ketoacidosis (DKA) is a life‐threatening acute complication of diabetes characterized by the accumulation of ketone bodies in the blood. Breath acetone, a ketone, directly correlates with blood ketones. Therefore, monitoring breat…
View article: 21.2% GaAs Solar Cell Using Bilayer Electron Selective Contact
21.2% GaAs Solar Cell Using Bilayer Electron Selective Contact Open
GaAs remains one of the crucial materials for solar cell applications as it boasts the world's highest efficiency single‐junction solar cells. However, their high cost limits their widespread terrestrial applications. Traditional GaAs sola…
View article: An efficient modeling workflow for high-performance nanowire single-photon avalanche detector
An efficient modeling workflow for high-performance nanowire single-photon avalanche detector Open
Single-photon detector (SPD), an essential building block of the quantum communication system, plays a fundamental role in developing next-generation quantum technologies. In this work, we propose an efficient modeling workflow of nanowire…
View article: Ion implantation induced interdiffusion in quantum wells for optoelectronic device integration
Ion implantation induced interdiffusion in quantum wells for optoelectronic device integration Open
Ion implantation induced intermixing of GaAs/AlGaAs and InGaAs/AGaAs quantum wells was studied using low temperature photoluminescence. Large energy shifts were observed with proton implantation and subsequent rapid thermal annealing. Ener…
View article: Complete research data for: Data-driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers
Complete research data for: Data-driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers Open
Full dataset supporting the publication "Data-driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers".This includes experimental results from 55,516 individual nanowire lasers using a multitude of experimental techniques…
View article: Three-dimensional electronic spectroscopy of excitons in asymmetric double quantum wells
Three-dimensional electronic spectroscopy of excitons in asymmetric double quantum wells Open
We utilize a three-dimensional (3D) visible spectroscopy to reveal and explore coherent coupling between excitons localized to GaAs quantum wells separated by barriers 4 and 6 nm wide. The coupled excitons were energetically separated by 4…
View article: Nanowire Array Breath Acetone Sensor for Diabetes Monitoring
Nanowire Array Breath Acetone Sensor for Diabetes Monitoring Open
Diabetic ketoacidosis (DKA) is a life-threatening acute complication of diabetes in which ketone bodies accumulate in the blood. Breath acetone (a ketone) directly correlates with blood ketones, such that breath acetone monitoring could be…
View article: Hierarchically Multiscale Vertically Oriented NiFeCo Nanoflakes for Efficient Electrochemical Oxygen Evolution at High Current Densities
Hierarchically Multiscale Vertically Oriented NiFeCo Nanoflakes for Efficient Electrochemical Oxygen Evolution at High Current Densities Open
Crucial advancements in versatile catalyst systems capable of achieving high current densities under industrial conditions, bridging the gap between fundamental understanding and practical applications, are pivotal to propel the hydrogen e…
View article: An efficient modeling workflow for high-performance nanowire single-photon avalanche detector
An efficient modeling workflow for high-performance nanowire single-photon avalanche detector Open
Single-photon detector (SPD), an essential building block of the quantum communication system, plays a fundamental role in developing next-generation quantum technologies. In this work, we propose an efficient modeling workflow of nanowire…
View article: Nanowires in Terahertz Photonics: Harder, Better, Stronger, Faster
Nanowires in Terahertz Photonics: Harder, Better, Stronger, Faster Open
By virtue of their quasi one-dimensional geometries, III-V semiconductor nanowires present unique capabilities for terahertz photonic devices. Ultrafast terahertz polarisation modulators and miniature terahertz photoconductive detectors ar…
View article: Unlocking Ultra‐High Performance in Immersed Solar Water Splitting with Optimised Energetics
Unlocking Ultra‐High Performance in Immersed Solar Water Splitting with Optimised Energetics Open
This research introduces a pioneering approach to solar water splitting technology, utilizing an innovative, highly efficient immersed system. The system incorporates a flexible array of electrochemical and photoelectrochemical cells, powe…
View article: Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition
Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition Open
Large-area epitaxial growth of III–V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitr…
View article: Lasing in Zn-doped GaAs nanowires on an iron film
Lasing in Zn-doped GaAs nanowires on an iron film Open
In this work, we demonstrate optically pumped lasing in highly Zn-doped GaAs nanowires (NWs) lying on an iron film. The conically shaped NWs are first covered with an 8 nm thick Al 2 O 3 film to prevent atmospheric oxidation and mitigate b…