W. C. Mitchel
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View article: Hierarchically constrained carrier dynamics in red-LED illuminated type-II InAs/GaSb superlattices
Hierarchically constrained carrier dynamics in red-LED illuminated type-II InAs/GaSb superlattices Open
We report on positive and negative persistent photo-effects observed in some red light emitting diode (LED)-illuminated type-II InAs/GaSb superlattices (SLs) grown on a p-type GaSb. By analyzing the time dependence of the transverse resist…
View article: Approach to multifunctional device platform with epitaxial graphene on transition metal oxide
Approach to multifunctional device platform with epitaxial graphene on transition metal oxide Open
Heterostructures consisting of two-dimensional materials have shown new physical phenomena, novel electronic and optical properties and new device concepts not observed in bulk material systems or purely three dimensional heterostructures.…
View article: Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors
Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors Open
Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lat…
View article: Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene
Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene Open
Twisted graphene is of particular interest due to several intriguing characteristics, such as its the Fermi velocity, van Hove singularities and electronic localization. Theoretical studies recently suggested the possible bandgap opening a…