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Novel SiC accumulation-mode power MOSFET Open

H. Liewih, Sima Dimitrijev, C.E. Weitzel, H.B. Harrison · 2001

In this paper, a new structure of Silicon Carbide (SiC) accumulation-mode MOSFET (ACCUFET) for high-power applications has been proposed and analyzed. The novel ACCUFET utilizes fully depleted N-channel epilayer, grown on P-base epilayer, …

Silicon‐on‐Sapphire Crystalline Perfection and MOS Transistor Mobility Open

C.E. Weitzel, R. T. Smith · 1978

Materials science Physics Philosophy

Experimental data show that there is a correlation between the crystalline perfection of a (100) silicon‐on‐sapphire epitaxial film and the magnitude and direction of misorientation of the sapphire substrate from the {102} normal. The perf…

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