Carsten Netzel
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View article: Broadband light emission from GaAsP and GaInP islands grown on silicon nanotip wafer via nanoheteroepitaxy
Broadband light emission from GaAsP and GaInP islands grown on silicon nanotip wafer via nanoheteroepitaxy Open
We present the monolithic integration of GaAsxP1−x and GaxIn1−xP islands, selectively grown on a Si(001) nanotip wafer using gas-source molecular-beam epitaxy via a nanoheteroepitaxy approach. Optimal growth temperatures balancing selectiv…
View article: Tunable Light Emission from GaAsP and GaInP Islands Grown on Silicon (001) Nanotips Wafer
Tunable Light Emission from GaAsP and GaInP Islands Grown on Silicon (001) Nanotips Wafer Open
In this work, we present the monolithic integration of GaAsP and GaInP islands, selectively grown on a CMOS-compatible Si nanotip wafer using gas-source molecular beam epitaxy via a nanoheteroepitaxy approach. These alloys span a wide elec…
View article: Impact of Silicon Doping on High‐Temperature Annealed AlN/Sapphire Templates
Impact of Silicon Doping on High‐Temperature Annealed AlN/Sapphire Templates Open
The threading dislocation density (TDD) of epitaxially grown AlN layers on sapphire substrates can be significantly decreased by high‐temperature annealing (HTA). This study employs a process to improve the material quality of such AlN lay…
View article: Spatial correlation of defect-selective etching and dark luminescence spots in Al <sub>x</sub> Ga<sub>1−x </sub>N
Spatial correlation of defect-selective etching and dark luminescence spots in Al <sub>x</sub> Ga<sub>1−x </sub>N Open
Defect-selective etching with molten Ba(OH) 2 /MgO etch drops was performed on c -plane AlGaN layers covering the entire composition range between GaN and AlN. Regardless of the aluminum content, the etchant produced shallow, hexagonal etc…
View article: Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy
Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy Open
Gallium phosphide (GaP) is a III–V semiconductor with remarkable optoelectronic properties, and it has almost the same lattice constant as silicon (Si). However, to date, the monolithic and large-scale integration of GaP devices with silic…
View article: Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates
Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates Open
AlN layers annealed at high temperatures offer low threading dislocation densities of mid 108 cm−2 and are therefore increasingly used as base layers in ultraviolet (UV) light emitting diode (LED) heterostructure growth. These LEDs, just l…
View article: High‐Temperature Annealing of Si‐Doped AlGaN
High‐Temperature Annealing of Si‐Doped AlGaN Open
This study explores the impact of Si doping on the material properties of high‐temperature annealed (HTA) Al 0.71 Ga 0.29 N layers, which are grown on AlN/sapphire templates. The AlGaN layers are doped with Si by applying different IV/III …
View article: Role of Oxygen Incorporation in High Temperature Annealed AlGaN
Role of Oxygen Incorporation in High Temperature Annealed AlGaN Open
High‐temperature annealing (HTA) is a powerful technique to decrease dislocation density in AlN, which can also be applied on AlGaN. This work investigates the impact of using sapphire and AlN as a material cover during the face‐to‐face HT…
View article: Gallium Phosphide Nanowires Grown on SiO<sub>2</sub> by Gas-Source Molecular Beam Epitaxy
Gallium Phosphide Nanowires Grown on SiO<sub>2</sub> by Gas-Source Molecular Beam Epitaxy Open
GaP as one of the III−V semiconductors has an indirect band gap in its natural zinc-blend (ZB) crystal phase, limiting its applications in optoelectronics. The atomic arrangements of the ZB GaP, however, can be changed by adding energy to …
View article: Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers
Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers Open
In this work, we compare the defect structure in unintentionally doped and Si-doped AlN layers grown by metalorganic vapor phase epitaxy (MOVPE) on high-temperature annealed (HTA) sputtered AlN templates on sapphire substrates. Since the H…
View article: Temperature Dependence of Dark Spot Diameters in GaN and AlGaN
Temperature Dependence of Dark Spot Diameters in GaN and AlGaN Open
Threading dislocations in c‐plane (Al,Ga)N layers are surrounded by areas with reduced light generation efficiency, called “dark spots.” These areas are observable in luminescence measurements with spatial resolution in the submicrometer r…
View article: High‐Temperature Annealing of AlGaN
High‐Temperature Annealing of AlGaN Open
In the past few years, high‐temperature annealing of AlN has become a proven method for providing AlN layers with low dislocation densities. Herein, the example of Al 0.77 Ga 0.23 N is used to investigate whether annealing can also improve…
View article: Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence
Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence Open
Non-intentionally doped c-plane GaN layers are generally employed as p-side waveguide layers in violet/blue-emitting laser diodes. The recombination and diffusion of charge carriers in the p-side GaN waveguide influence the injection effic…
View article: Temperature‐Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
Temperature‐Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells Open
Temperature‐dependent transport of photoexcited charge carriers through a nominally undoped, c‐plane GaN layer toward buried InGaN quantum wells is investigated by continuous‐wave and time‐resolved photoluminescence spectroscopy. The excit…
View article: Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes Open
Herein, the scope is to provide an overview on the current status of AlN/sapphire templates for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting diodes (LEDs) with focus on the work done previously. Furthermore, approaches to imp…
View article: Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes
Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes Open
Herein, AlN growth by metalorganic vapor‐phase epitaxy on hole‐type nanopatterned sapphire substrates is investigated. Cracking occurs for an unexpectedly thin‐layer thickness, which is associated to altered nucleation conditions caused by…
View article: High power UVB light emitting diodes with optimized n-AlGaN contact layers
High power UVB light emitting diodes with optimized n-AlGaN contact layers Open
The influence of the n-AlGaN contact layer thickness and doping profile on the efficiency, operating voltage and lifetime of 310 nm LEDs has been investigated. Increasing the n-contact layer thickness reduces the operation voltage of the L…