Explanipedia

Low-loss phase modulation using a MoS2 monolayer integrated on silicon waveguides Open

Cheng-Han Wu, Tom Reep, Yishu Huang, Steven Brems, Christian Haffner , et al. · 2025

Two dimensional (2D) materials are at the forefront of research in integrated modulators. However, achieving pure phase modulation with low insertion loss remains challenging in 2D material modulators. This work explores phase modulators b…

Graphene-Based Silicon Photonic Electro-Absorption Modulators and Phase Modulators Open

Cheng-Han Wu, Tom Reep, Steven Brems, Didit Yudistira, Joris Van Campenhout , et al. · 2024

Since their first demonstration, graphene-based silicon waveguide modulators have evolved towards very attractive devices for adoption in future optical interconnects. In this paper, we first review state-of-the-art for graphene-based inte…

Enhanced Thermal Conductivity of Free-Standing Double-Walled Carbon Nanotube Networks Open

Jake D. Mehew, Marina Y. Timmermans, David Saleta Reig, Stefanie Sergeant, Marianna Sledzinska , et al. · 2023

Nanomaterials are driving advances in technology due to their oftentimes superior properties over bulk materials. In particular, their thermal properties become increasingly important as efficient heat dissipation is required to realize hi…

High-efficiency dual single layer graphene modulator integrated on slot waveguides Open

Cheng-Han Wu, Tom Reep, Steven Brems, Julien Jussot, Vivek Mootheri , et al. · 2023

This paper presents an experimental and theoretical investigation of a graphene-integrated electro-absorption modulator (EAM) based on a slot waveguide. Due to the enhanced light-matter interaction of graphene, the device exhibits an impre…

Wafer‐Scale Integration of Single Layer Graphene Electro‐Absorption Modulators in a 300 mm CMOS Pilot Line Open

Cheng-Han Wu, Steven Brems, Didit Yudistira, Daire Cott, Alexey Milenin , et al. · 2023

Graphene‐based devices have shown great promise for several applications. For graphene devices to be used in real‐world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a pa…

Wafer-scale Graphene Electro-absorption Modulators Fabricated in a 300mm CMOS Platform Open

Cheng-Han Wu, Steven Brems, Didit Yudistira, Daire Cott, Alexey Milenin , et al. · 2023

Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a pa…

Saturable absorption of a double layer graphene modulator on a slot waveguide Open

Tom Reep, Cheng-Han Wu, Zheng Wang, Steven Brems, Stéphane Clemmen , et al. · 2022

The saturable absorption of a double-layer graphene modulator is experimentally demonstrated on a silicon slot waveguide platform. Saturation was found to start at ~0.8W with a maximum saturation depth of 1.9 dB for a 50μm

2D materials for future heterogeneous electronics Open

Max C. Lemme, Deji Akinwande, Cedric Huyghebaert, Christoph Stampfer · 2022

2D materials for future heterogeneous electronics Open

Max C. Lemme, Deji Akinwande, Cedric Huyghebaert, Christoph Stampfer · 2022

Graphene and two-dimensional materials (2DM) remain an active field of research in science and engineering over 15 years after the first reports of 2DM. The vast amount of available data and the high performance of device demonstrators lea…

Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111) Open

Adrian Hemmi, Huanyao Cun, Steven Brems, Cedric Huyghebaert, Thomas Greber · 2021

Single layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapour deposition at process temperatures between 1000 and 1300 K is in-situ investigated by photoelectron yield measurements. The…

Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111) Open

Adrian Hemmi, Huanyao Cun, Steven Brems, Cedric Huyghebaert, Thomas Greber · 2021

Single-layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapor deposition at process temperatures between 1000 and 1300 K is in situ investigated by photoelectron yield measurements. The …

Processing Stability of Monolayer WS2 on SiO2 Open

Gilles Delie, Daniele Chiappe, Inge Asselberghs, Cedric Huyghebaert, Iuliana Radu , et al. · 2021

Using internal photoemission of electrons, the energy position of the valence band top edge in 1 monolayer WS 2 films on top of SiO 2 thermally-grown on Si was monitored to evaluate the stability of the WS 2 layer with respect to two criti…

Case studies of electrical characterisation of graphene by terahertz time-domain spectroscopy Open

Patrick R. Whelan, Binbin Zhou, Odile Bezencenet, Abhay Shivayogimath, Neeraj Mishra , et al. · 2021

Graphene metrology needs to keep up with the fast pace of developments in graphene growth and transfer. Terahertz time-domain spectroscopy (THz-TDS) is a non-contact, fast, and non-destructive characterization technique for mapping the ele…

Case studies of electrical characterisation of graphene by terahertz time-domain spectroscopy Open

Patrick R. Whelan, Binbin Zhou, Odile Bezencenet, Abhay Shivayogimath, Neeraj Mishra , et al. · 2021

Graphene metrology needs to keep up with the fast pace of developments in graphene growth and transfer. Terahertz time-domain spectroscopy (THz-TDS) is a non-contact, fast, and non-destructive characterization technique for mapping the ele…

Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices Open

Mario Lanza, Quentin Smets, Cedric Huyghebaert, Lain‐Jong Li · 2020

Trap Density Assessment on Multilayer WS2 using Power-Dependent Indirect Photoluminescence Open

Alessandra Leonhardt, Thomas Nuytten, César Javier Lockhart de la Rosa, Stefanie Sergeant, Vivek Mootheri , et al. · 2020

Material or interface defectivity assessment of 2D materials remains a challenge, specifically in terms of simple techniques which can be integrated in a CMOS process line. Here we demonstrate an optical technique that assesses interface t…

Use of the Indirect Photoluminescence Peak as an Optical Probe of Interface Defectivity in MoS2 Open

Alessandra Leonhardt, César Javier Lockhart de la Rosa, Thomas Nuytten, Luca Banszerus, Stefanie Sergeant , et al. · 2020

Defect characterization of 2D materials is a critical aspect for their successful integration in future electronic devices. Here, a simple characterization technique is proposed that opens a path for fast, non‐invasive, quality assessment …

High speed graphene-silicon electro-absorption modulators for the O-band and C-band Open

Chiara Alessandri, Inge Asselberghs, Steven Brems, Cedric Huyghebaert, Joris Van Campenhout , et al. · 2020

In the past few years, graphene has drawn interest for applications in optoelectronic devices. Due to its extraordinary properties, i.e. wide optical bandwidth, tunable absorption, high carrier mobility, and CMOS compatibility, it is a can…

Analysis of Transferred MoS2 Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation Open

Ben Schoenaers, Alessandra Leonhardt, Ankit Nalin Mehta, A. Stesmans, Daniele Chiappe , et al. · 2020

A low-temperature multi-frequency electron spin resonance (ESR) study has been carried out on 1, 3.5, and 6 layer thick MoS 2 films, grown by metal organic vapor deposition (MOCVD) and subsequently transferred on SiO 2 /Si. This reveals th…

5 × 25 Gbit/s WDM transmitters based on passivated graphene–silicon electro-absorption modulators Open

Chiara Alessandri, Inge Asselberghs, Steven Brems, Cedric Huyghebaert, Joris Van Campenhout , et al. · 2020

Today, one of the key challenges of graphene devices is establishing fabrication processes that can ensure performance stability and repeatability and that can eventually enable production in high volumes. In this paper, we use up-scalable…

Prospects for hybrid integration of Si and SiN waveguides with graphene and other 2D-materials Open

Chiara Alessandri, Cheng-Han Wu, Frédéric Peyskens, Inge Asselberghs, Steven Brems , et al. · 2020

Spin communication over 30 µ m long channels of chemical vapor deposited graphene on SiO 2 Open

Zewdu M. Gebeyehu, Subir Parui, Juan F. Sierra, Matias Timmermans, M.J. Esplandiu , et al. · 2019

We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 µm in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-…

4-Channel C-Band WDM Transmitter Based on 10 GHz Graphene-Silicon Electro-Absorption Modulators Open

Chiara Alessandri, Inge Asselberghs, Peter De Heyn, Steven Brems, Cedric Huyghebaert , et al. · 2019

We demonstrate three 4-channelWDMtransmitters, each based on four graphenesilicon electro-absorption modulators with passivated graphene, achieving similar to 2.6dB insertion loss, similar to 5.5dB extinction ratio for 8V voltage swing and…

Graphene-based integrated photonics for next-generation datacom and telecom Open

M. Romagnoli, Vito Sorianello, M. Midrio, Frank H. L. Koppens, Cedric Huyghebaert , et al. · 2018

Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices Open

Danny Wan, Mauricio Manfrini, Adrien Vaysset, Laurent Souriau, Lennaert Wouters , et al. · 2018

Magnetic tunnel junctions (MTJs) interconnected via a continuous\nferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG)\nlogic. The MTJs are biased independently and show magnetoelectric response\nunder spin transfe…

Relation between film thickness and surface doping of MoS2 based field effect transistors Open

César Javier Lockhart de la Rosa, Goutham Arutchelvan, Alessandra Leonhardt, Cedric Huyghebaert, Iuliana Radu , et al. · 2018

Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding h…

Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures Open

Yashwanth Balaji, D. Mocuta, G. Groeseneken, Quentin Smets, César Javier Lockhart de la Rosa , et al. · 2018

2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control. TMDs are especially well suited for tunneling field-effect transistors (TFETs) du…

Growth of Millimeter-Sized Graphene Single Crystals on Al2O3(0001)/Pt(111) Template Wafers Using Chemical Vapor Deposition Open

Ken Verguts, Yves Defossez, Alessandra Leonhardt, Joke De Messemaeker, Koen Schouteden , et al. · 2018

The synthesis of graphene using chemical vapor deposition on platinum surfaces is discussed. The crystalline nature of the platinum substrates as well as the graphene growth conditions play a key role to yield monolayer graphene with low d…

Graphene–silicon phase modulators with gigahertz bandwidth Open

Vito Sorianello, M. Midrio, G. Contestabile, Inge Asselberghs, Joris Van Campenhout , et al. · 2017

Capacitive actuation and switching of add–drop graphene-silicon micro-ring filters Open

Tommaso Cassese, Marco Angelo Giambra, Vito Sorianello, Gabriele De Angelis, M. Midrio , et al. · 2017

We propose and experimentally demonstrate capacitive actuation of a graphene–silicon micro-ring add/drop \nfilter. The mechanism is based on a silicon–SiO2–graphene capacitor on top of the ring waveguide. We \nshow the capacitive actuation…

Cedric Huyghebaert YOU? Author Swipe