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View article: Key technological elements for efficient integration of ZnO nanonets into performant field-effect transistors
Key technological elements for efficient integration of ZnO nanonets into performant field-effect transistors Open
Zinc oxide (ZnO) nanomaterials, particularly nanowire networks (nanonets), hold strong potential for next-generation nanoelectronic applications due to their unique optical, electronic, and mechanical properties. In this work, we demonstra…
View article: Self-rectifying hysteresis with dynamic conductance modulation in amorphous-nanocrystalline lanthanum nickelate based memristive devices
Self-rectifying hysteresis with dynamic conductance modulation in amorphous-nanocrystalline lanthanum nickelate based memristive devices Open
International audience
View article: Double-structured zinc oxide nanowire architecture for robust superhydrophobicity and multifunctionality
Double-structured zinc oxide nanowire architecture for robust superhydrophobicity and multifunctionality Open
International audience
View article: Double-Structured Zinc Oxide Nanowire Architecture for Robust Superhydrophobicity and Multifunctionality
Double-Structured Zinc Oxide Nanowire Architecture for Robust Superhydrophobicity and Multifunctionality Open
View article: Self-Rectifying Analog Resistive Switching in Amorphous-Nanocrystalline Lanthanum Nickelate Composite
Self-Rectifying Analog Resistive Switching in Amorphous-Nanocrystalline Lanthanum Nickelate Composite Open
View article: TP29 - Comprehensive correlative study of post-treated vertically grown ZnO nanowires
TP29 - Comprehensive correlative study of post-treated vertically grown ZnO nanowires Open
View article: Growth Mechanism of thin and long Cu₂O Nanowires
Growth Mechanism of thin and long Cu₂O Nanowires Open
View article: Impact of the La2NiO4+δ oxygen content on the synaptic properties of the TiN/La2NiO4+δ/Pt memristive devices
Impact of the La2NiO4+δ oxygen content on the synaptic properties of the TiN/La2NiO4+δ/Pt memristive devices Open
The rapid development of brain-inspired computing requires new artificial components and architectures for its hardware implementation. In this regard, memristive devices emerged as potential candidates for artificial synapses because of t…
View article: “Clean Room” mission or virtual reality for microelectronics learning
“Clean Room” mission or virtual reality for microelectronics learning Open
To virtual reality tools, under the Nanoelec/CHIF program, with the aim of enabling as many students as possible to discover the microelectronics clean room environment, the notion of process flow and the various characterization technique…
View article: Silica and Silicon Based Nanostructures
Silica and Silicon Based Nanostructures Open
Silica and silicon-based nanostructures are now well-understood materials for which the technologies are mature. The most obvious applications, such as electronic devices, have been widely explored over the last two decades. The aim of thi…
View article: Silica- and Silicon-Based Nanostructures
Silica- and Silicon-Based Nanostructures Open
As depicted in Figure 1, studies on silicon and silica-based nanostructures first appeared in the early 1990s, and their numbers grew until the mid-2010s [...]
View article: Pourquoi est-il important d’avoir une égalité femmes-hommes dans le monde de l’IA ?
Pourquoi est-il important d’avoir une égalité femmes-hommes dans le monde de l’IA ? Open
"The Conversation : L’expertise universitaire, l’exigence journalistique" est un média en ligne et une association à but non lucratif. Tous les articles publiés le sont sous licence Creative Commons, donc en accès libre.
View article: Lubricant Depletion‐Resistant Slippery Liquid‐Infused Porous Surfaces via Capillary Rise Lubrication of Nanowire Array
Lubricant Depletion‐Resistant Slippery Liquid‐Infused Porous Surfaces via Capillary Rise Lubrication of Nanowire Array Open
Despite their promise in diverse applications, lubricant depletion over time presents an important challenge for slippery lubricant‐infused porous surfaces (SLIPS). The main source of lubricant depletion is the growth of a wetting ridge ar…
View article: Role played by the nanowire/nanowire junctions in the electrical properties of semiconductor percolating silicon nanowire networks
Role played by the nanowire/nanowire junctions in the electrical properties of semiconductor percolating silicon nanowire networks Open
In this paper, we highlight the key role played by Si nanowire/nanowire junctions in the electrical performance of field-effect transistors (FETs) based on percolating Si nanowire (SiNW) networks, also called nanonets. Using our original t…
View article: Analysis of the role of inter-nanowire junctions on current percolation effects in silicon nanonet field-effect transistors
Analysis of the role of inter-nanowire junctions on current percolation effects in silicon nanonet field-effect transistors Open
View article: Low-frequency Noise Characterization of Si Nanonet Field Effect Transistors
Low-frequency Noise Characterization of Si Nanonet Field Effect Transistors Open
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View article: Material engineering of percolating silicon nanowire networks for reliable and efficient electronic devices
Material engineering of percolating silicon nanowire networks for reliable and efficient electronic devices Open
View article: First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection
First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection Open
International audience
View article: Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion
Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion Open
View article: An innovative large scale integration of silicon nanowire-based field effect transistors
An innovative large scale integration of silicon nanowire-based field effect transistors Open
View article: Evaluation of Silicon Nanonet Field Effect Transistor as Photodiodes
Evaluation of Silicon Nanonet Field Effect Transistor as Photodiodes Open
Silicon nanowire networks (nanonets) is an emerging candidate technology for sensor applications. In this work, we characterized Field Effect Transistor (FETs) employing silicon nanonet channels and evaluated their performance as photodiod…
View article: On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors
On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors Open
In this paper, the process and electrical characteristics of DNA sensor devices based on silicon nanonet (SiNN) field-effect transistors are reported. The SiNN, another name of randomly oriented Si nanowires network, was successfully integ…
View article: Silicon Nanowires: Low Temperature Processing to Form Oxidation Insensitive Electrical Contact at Silicon Nanowire/Nanowire Junctions (Adv. Electron. Mater. 10/2015)
Silicon Nanowires: Low Temperature Processing to Form Oxidation Insensitive Electrical Contact at Silicon Nanowire/Nanowire Junctions (Adv. Electron. Mater. 10/2015) Open
International audience