Changchun Zhang
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View article: Solamargine inhibited the progression of non-small cell lung cancer <i>in vitro </i>by activating T cells
Solamargine inhibited the progression of non-small cell lung cancer <i>in vitro </i>by activating T cells Open
Lung cancer is the leading cause of cancer-related death globally and the most common cancer type. Solamargine is an extract from the traditional Chinese medicine, Long Kui, which exhibits antitumor effects in a number of cancer types, inc…
View article: Effective alleviation of depressive and anxious symptoms and sleep disorders in benzodiazepine‐dependent patients through repetitive transcranial magnetic stimulation
Effective alleviation of depressive and anxious symptoms and sleep disorders in benzodiazepine‐dependent patients through repetitive transcranial magnetic stimulation Open
Benzodiazepine (BZD) dependence poses a significant challenge in mental health, prompting the exploration of treatments like repetitive transcranial magnetic stimulation (rTMS). This research aims to assess the impact of rTMS on alleviatin…
View article: Hysteretic Characteristics and Structural Seismic Performance of Magnetorheological Damping Self-Centering Braces
Hysteretic Characteristics and Structural Seismic Performance of Magnetorheological Damping Self-Centering Braces Open
A dynamic performance test was conducted on a magnetorheological damping self-centering brace (MR-SCB) that can provide both Coulomb damping and viscous damping simultaneously. The results showed that the brace exhibited a full flag-shaped…
View article: Spatio-temporal evolution and trend prediction of urban ecosystem service value based on CLUE-S and GM (1,1) compound model
Spatio-temporal evolution and trend prediction of urban ecosystem service value based on CLUE-S and GM (1,1) compound model Open
View article: Investigation of the Laser Powder Bed Fusion Process of Ti-6.5Al-3.5Mo-1.5Zr-0.3Si Alloy
Investigation of the Laser Powder Bed Fusion Process of Ti-6.5Al-3.5Mo-1.5Zr-0.3Si Alloy Open
Laser powder bed fusion (LPBF) is an advanced manufacturing technology; however, inappropriate LPBF process parameters may cause printing defects in materials. In the present work, the LPBF process of Ti-6.5Al-3.5Mo-1.5Zr-0.3Si alloy was i…
View article: Creep-Fatigue Interaction Behaviors and Microstructure Evolution of Ni-based Superalloy 617
Creep-Fatigue Interaction Behaviors and Microstructure Evolution of Ni-based Superalloy 617 Open
徐倩虹 2 (1.上海电气电站设备有限公司 上海 200240; 2. 上海电气燃气轮机有限公司 上海 200240
View article: A High-Speed Programmable Frequency Divider for a Ka-Band Phase Locked Loop-Type Frequency Synthesizer in 90-nm CMOS
A High-Speed Programmable Frequency Divider for a Ka-Band Phase Locked Loop-Type Frequency Synthesizer in 90-nm CMOS Open
A high-speed programmable frequency divider for a Ka-band phase-locked loop (PLL)-type frequency synthesizer system is presented and fabricated in 90 nm CMOS technology. It consists mainly of a divided-by-8/9 dual-modulus prescaler (DMP) a…
View article: A CMOS Programmable Fourth-Order Butterworth Active-RC Low-Pass Filter
A CMOS Programmable Fourth-Order Butterworth Active-RC Low-Pass Filter Open
This paper presents a low-pass filter (LPF) for an ultra-high frequency (UHF) radio frequency identification (RFID) reader transmitter in standard SMIC 0.18 μm CMOS technology. The active-RC topology and Butterworth approximation function …
View article: A CMOS high-performance inductorless ring VCO with extended monotonic tuning voltage range
A CMOS high-performance inductorless ring VCO with extended monotonic tuning voltage range Open
A high-performance inductorless ring VCO with wide tuning range and extended monotonic tuning voltage range (MTVR) is proposed and fabricated in standard 0.18 µm CMOS technology. By combining the crossing-strength-tuning and load-resistanc…
View article: A CMOS QVCO using combined capacitor-coupling, bottom-series coupling and splitting switched biasing techniques
A CMOS QVCO using combined capacitor-coupling, bottom-series coupling and splitting switched biasing techniques Open
A quadrature voltage-controlled-oscillator (QVCO) is presented and fabricated in standard 0.18 µm RF CMOS technology. Passively Capacitor coupling, actively bottom-series (BS) coupling and splitting switching biasing (SSB) techniques are c…
View article: Erratum for: A Nonuniform Distributed Power Amplifier in 0.18-mm CMOS Technology
Erratum for: A Nonuniform Distributed Power Amplifier in 0.18-mm CMOS Technology Open
Received 12 November 2016 In the above-mentioned article, which appeared in Microwave and Optical Technology Letters, Volume 59#6, DOI 30551, the title of the article was published incorrectly. The correct title is shown below. A NONUNIFOR…
View article: A 2 GSps, 8-Bit Folding and Interpolation ADC with Foreground Calibration in 90 nm CMOS Technology
A 2 GSps, 8-Bit Folding and Interpolation ADC with Foreground Calibration in 90 nm CMOS Technology Open
A single channel 2 GSps, 8-bit folding and interpolation (F&I) analog-to-digital converter (ADC) with foreground calibration in TSMC 90 nm CMOS technology is presented in this paper. The ADC utilizes cascaded folding, which incorporates an…
View article: <i>Lycium barbarum</i> Polysaccharides Protect against Trimethyltin Chloride‐Induced Apoptosis via Sonic Hedgehog and PI3K/Akt Signaling Pathways in Mouse Neuro‐2a Cells
<i>Lycium barbarum</i> Polysaccharides Protect against Trimethyltin Chloride‐Induced Apoptosis via Sonic Hedgehog and PI3K/Akt Signaling Pathways in Mouse Neuro‐2a Cells Open
Trimethyltin chloride (TMT) is a classic neurotoxicant that can cause severe neurodegenerative diseases. Some signaling pathways involving cell death play pivotal roles in the central nervous system. In this study, the role of Sonic Hedgeh…
View article: Variation of Lateral Width Technique in SoI High-Voltage Lateral Double-Diffused Metal–Oxide–Semiconductor Transistors Using High-k Dielectric
Variation of Lateral Width Technique in SoI High-Voltage Lateral Double-Diffused Metal–Oxide–Semiconductor Transistors Using High-k Dielectric Open
By employing the linear increasing drift region width and the high-k dielectric region, a novel variation of lateral width (VLW) technique is proposed to even the equipotential contour and increase the drift doping concentration, which max…