Che‐Hung Wang
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Atomic scale of ruthenium silicidation and diffusion behaviors by in-situ transmission electron microscope investigation Open
Transition metal silicides possess high thermal stability and good electrical conductivity, making them widely used in various engineering fields. Ruthenium silicide, a narrow-bandgap semiconductor, combines low chemical reactivity with a …
Atomic Imaging of Phase Transformation and Self-Intercalation of Two-Dimensional CrS <sub>2</sub> by <i>In Situ</i> TEM Open
Controlling phase transitions in two-dimensional (2D) materials offers a powerful route for engineering novel electronic and magnetic functionalities. However, atomically resolved visualization of these dynamic processes remains a signific…
View article: Enhanced Performance and In Situ TEM Investigation in High Entropy Alloy Electrode Based Memristors
Enhanced Performance and In Situ TEM Investigation in High Entropy Alloy Electrode Based Memristors Open
Recent developments in resistive switching random access memory (RRAM) have gained significant attention owing to their high‐density storage, low power consumption, and fast switching. RRAM performance strongly depends on its electrode mat…
<i>In Situ</i> Atomic-Scale Investigation of Electromigration Behavior in Cu–Cu Joints at High Current Density Open
Electromigration (EM) poses significant challenges to the reliability of miniaturized devices, particularly three-dimensional integrated circuits (3DICs) operating under high current densities. The EM phenomenon results from atomic-scale m…
View article: Titanium Self‐Intercalation in Titanium Diselenide Devices: Insights from In Situ Transmission Electron Microscopy
Titanium Self‐Intercalation in Titanium Diselenide Devices: Insights from In Situ Transmission Electron Microscopy Open
Metallic transition metal dichalcogenides (MTMDCs) are of significant attention for various electronic applications due to their anisotropic conductivity, high electron mobility, superconductivity, and charge‐density‐waves (CDW). Understan…
View article: In Situ Transmission Electron Microscopy Investigation of Novel High‐Entropy Silicide (CrFeCoNi)Si Formation at Atomic Scale
In Situ Transmission Electron Microscopy Investigation of Novel High‐Entropy Silicide (CrFeCoNi)Si Formation at Atomic Scale Open
High‐entropy silicides (HESs) are promising for applications requiring enhanced mechanical properties. Additionally, their unique design concepts make them valuable in microelectronics. However, current research primarily focuses on macros…
Atomic‐Scale Phase Transformation in Perovskite LaCoO<sub><i>x</i></sub> Resistive Switching Memristive Devices Open
Resistive Switching Memristive Devices In article number 2400019, Wen-Wei Wu and co-workers reveal a perovskite–brownmillerite topotactic phase transformation within the LaCoOx layer through scanning transmission electron microscopy observ…
Atomic‐Scale Phase Transformation in Perovskite LaCoO<sub><i>x</i></sub> Resistive Switching Memristive Devices Open
Resistive random‐access memory (RRAM) is considered the next‐generation nonvolatile memory owing to its simplicity, low power consumption, and high storage density. Resistive switching (RS) occurs in a wide range of materials among the tra…
Atomic imaging and thermally induced dynamic structural evolution of two-dimensional non-layered Cr2S3 Open
Two-dimensional non-layered materials have attracted considerable attention owing to their potential for innovative applications. Chromium sulfide (Cr2S3) is a ferrimagnetic material with special spin states and thickness-dependent conduct…
View article: In Situ Atomic‐Scale Observation of Monolayer MoS<sub>2</sub> Devices under High‐Voltage Biasing via Transmission Electron Microscopy (Small 7/2022)
In Situ Atomic‐Scale Observation of Monolayer MoS<sub>2</sub> Devices under High‐Voltage Biasing via Transmission Electron Microscopy (Small 7/2022) Open
MoS2 Devices In article number 2106411, Wen-Wei Wu and co-workers reveal the direct observation of an MoS2 device under biasing via powerful in situ transmission electron microscopy (TEM). During in situ TEM biasing, the MoS2 is etched ver…