Chenglu Lin
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View article: Investigation of silicon on insulator fabricated by two-step O+ implantation
Investigation of silicon on insulator fabricated by two-step O+ implantation Open
In this paper, we investigated the dose window of forming a continuous buried oxide (BOX) layer by single implantation at the implantation energy of 200 keV. Then, an improved two-step implantation process with second implantation dose of …
View article: Modified postannealing of the Ge condensation process for better-strained Si material and devices
Modified postannealing of the Ge condensation process for better-strained Si material and devices Open
A modified postannealing at 1000 °C in N2 ambient has been carried out to improve the Ge distribution in the SiGe layer fabricated by the Ge condensation process, which is a potential technique for strained Si fabrication. Three kinds of S…
View article: Fabrication of Thick-film Silicon on Insulator by Separation by Implanted Oxygen Layer Transfer
Fabrication of Thick-film Silicon on Insulator by Separation by Implanted Oxygen Layer Transfer Open
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View article: Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation
Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation Open
Plasma activation has been investigated for its ability to induce a strong bonding energy even at low-temperature annealing. In this paper, Ge, Si, and surface hydrophilicities with oxygen and nitrogen plasma activation are analyzed by con…
View article: Void-free low-temperature silicon direct-bonding technique using plasma activation
Void-free low-temperature silicon direct-bonding technique using plasma activation Open
A low-temperature silicon direct-bonding technique has been researched using variant plasma (N2, O2, Ar, and H∕He) pretreatment prior to bonding for surface activation. In plasma bonding, after annealing at 300°C for an hour the authors ge…
View article: Pulsed KrF excimer laser deposition of AlN thin films
Pulsed KrF excimer laser deposition of AlN thin films Open
AlN thin films were fabricated on silicon(100) substrates by pulsed laser deposition and their properties were investigated.Our results indicate that the AlN films have a wurtzite crystalline structure with(002) preferential orientation ov…
View article: Structural and abnormal electrical properties of excess PbO-doped lead lanthanum titanate thin films
Structural and abnormal electrical properties of excess PbO-doped lead lanthanum titanate thin films Open
Lead lanthanum titanate (PLT) thin films with excess PbO (from 0 to 20 mol%) were prepared by a metal-organic decomposition process. The ferroelectric properties and current-voltage (C -V ) characteristics of PLT films were investigated as…
View article: MICROSTRUCTURE AND PHYSICAL PROPERTIES OF SrBi2Ta2O9 FERROELECTRIC THIN FILMS
MICROSTRUCTURE AND PHYSICAL PROPERTIES OF SrBi2Ta2O9 FERROELECTRIC THIN FILMS Open
High quality SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates were obtained using pulsed laser deposition combined with annealing at 700℃ in oxygen. The high diffraction peak of(008) and (115) was characterized by X-ray diffractometer.Goo…
View article: Observation of slow positron annihilation in silicide films formed by solid state interaction of Co/Ti/Si and Co/Si
Observation of slow positron annihilation in silicide films formed by solid state interaction of Co/Ti/Si and Co/Si Open
Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si. Variable-energy (0–20 keV) positrons were implanted into samples at different depths. The Doppler broadening of the annihilation γ-ray energy spectr…
View article: SEGREGATION OF ARSENIC DURING THE SOLID STATE REACTION OF TERNARY Co/Ti/Si SYSTEM
SEGREGATION OF ARSENIC DURING THE SOLID STATE REACTION OF TERNARY Co/Ti/Si SYSTEM Open
The bimetallic layers of Co/Ti were deposited by ion beam sputtering on silicon implanted with arsenic. The sample of Co/Ti/Si was treated by a multi-step annealing under nitrogen ambient. The behaviuor of arsenic during the reaction of te…
View article: TIME RESOLVED REFLECTIVITY MEASUREMENTS OF SOLID PHASE EPITAXY IN P2+ AND P+ IMPLANTED SILICON
TIME RESOLVED REFLECTIVITY MEASUREMENTS OF SOLID PHASE EPITAXY IN P2+ AND P+ IMPLANTED SILICON Open
The solid phase epitaxy processes of (100) Si implanted at 77K by 180 keV, 1×1014/cm2 P2+ and 90keV, 2×1014/cm2 P+ have been investigated by using time resolved reflectivity (TRB), Rutherford back scattering and channeling (RBS/C), and cro…
View article: AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION
AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION Open
The chemical composition and interface structure of silicon on insulator (SOI) formed by O+ (200 keV, 1.8×l018/cm-2) or N+ (190 keV, 1.8×1018/cm-2) implanted into silicon have been investigated by using Auger electron spectroscopy (AES) wi…
View article: A STUDY OF DAMAGE IN SILICON CREATED BY P2+ IMPLANTATION
A STUDY OF DAMAGE IN SILICON CREATED BY P2+ IMPLANTATION Open
The damage and annealing behavior of Si implanted at room temperature with P2+ and P+ at different energies (5-600 keV) and intermediate dose (～1014/cm2) has been investigated. Experimental results show that the damage created by P2+ impla…
View article: CW CO2-LASER ANNEALING AND ALLOYING OF SEMICONDUCTORS
CW CO2-LASER ANNEALING AND ALLOYING OF SEMICONDUCTORS Open
The effects of CW CO2-laser irradiation on semiconductors are studied with primary emphasis on the physics of the process. Experimental results and theoretical considerations show that semiconductor sample can be heated to desired temperat…
View article: SILICON IMPLANTATION IN SEMI-INSULATING GaAs SUBSTRATE
SILICON IMPLANTATION IN SEMI-INSULATING GaAs SUBSTRATE Open
Semi-insulating GaAs substrates doped with chromium were implanted with 120-160 ke V28Si+ ions (1012-1013 cm-2 at room temperature. After thermal annealing, the carrier concentration and mobility profiles, residual damage and impurity leve…