Christian Enz
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View article: Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures
Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures Open
Radio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs conside…
View article: A 0.4 e-rms Temporal Readout Noise 7.5 µm Pitch and a 66% Fill Factor Pixel for Low Light CMOS Image Sensors
A 0.4 e-rms Temporal Readout Noise 7.5 µm Pitch and a 66% Fill Factor Pixel for Low Light CMOS Image Sensors Open
This paper explores a new way to reduce the readout noise for CMOS image sensors by using a typical 4T pixel embedding a PMOS source follower with reduced oxide thickness and gate dimensions. This approach is confirmed by a test chip desig…
View article: An Ultralow Power Short-Range 60-GHz FMCW Radar in 22-nm FDSOI CMOS
An Ultralow Power Short-Range 60-GHz FMCW Radar in 22-nm FDSOI CMOS Open
This article presents the design of an ultralow power short-range 57-66 GHz frequency-modulated continuous-wave (FMCW) radar. The transmitter (TX) path includes a BPSK modulator in order to implement a low-IF architecture and it is optimiz…
View article: Analytical Modeling of Cryogenic Subthreshold Currents in 22-nm FDSOI Technology
Analytical Modeling of Cryogenic Subthreshold Currents in 22-nm FDSOI Technology Open
The transistor compact model is crucial but has yet to mature for cryogenic electronics. This paper presents a sophisticated analytical model of the MOSFET subthreshold current at cryogenic temperatures, accounting for the thermionic, hopp…
View article: Third-harmonic generation monitoring of femtosecond-laser-induced in-volume functional modifications
Third-harmonic generation monitoring of femtosecond-laser-induced in-volume functional modifications Open
During the last two decades, ultrafast in-volume laser-based processing of transparent materials has emerged as a key 3D-printing method for manufacturing a variety of complex integrated photonic devices and micro-parts. Yet, identifying s…
View article: Design of Low-power Analog Circuits in Advanced Technology Nodes using the $G_{m}/I_{D}$ Approach
Design of Low-power Analog Circuits in Advanced Technology Nodes using the $G_{m}/I_{D}$ Approach Open
The Gm/ID approach has proven to be an efficient technique for the design of low-power analog circuits. Until now it was mostly demonstrated on older CMOS technology nodes. In this paper we will show that the Gm/ID methodology still holds …
View article: Design of Cryo-CMOS Analog Circuits using the $G_{m}/I_{D}$ Approach
Design of Cryo-CMOS Analog Circuits using the $G_{m}/I_{D}$ Approach Open
The Gm/ID approach has proven to be an efficient technique for the design of low-power analog circuits even in advanced technology nodes. It has already been shown that the normalized Gm/ID is actually a universal figure-of-merit (FoM) tha…
View article: The Fano Noise Suppression Factor and the $G_{m}/I_{D}$ FoM
The Fano Noise Suppression Factor and the $G_{m}/I_{D}$ FoM Open
This paper establishes the close relation that exists between the Fano noise suppression factor F and the Gm/ID FoM showing that F is proportional to the product of the thermal noise excess factor γn and the normalized Gm/ID function. Taki…
View article: Optical urea sensing in sweat for kidney healthcare by sensitive and selective non-enhanced Raman spectroscopy
Optical urea sensing in sweat for kidney healthcare by sensitive and selective non-enhanced Raman spectroscopy Open
Sweat biomarker analysis has attracted much interest in applications ranging from sports to wearable healthcare. Among all the sweat biomolecules, abnormal urea levels have been linked to several complications, particularly renal dysfuncti…
View article: Analytical Modeling of Source-to-Drain Tunneling Current Down to Cryogenic Temperatures
Analytical Modeling of Source-to-Drain Tunneling Current Down to Cryogenic Temperatures Open
The subthreshold swing (SS) of MOSFETs decreases with temperature and then saturates below a critical temperature. Hopping conduction via the band tail has been proposed as the possible cause for the SS saturation. On the other hand, numer…
View article: Third-harmonic generation monitoring of femtosecond laser-induced in-volume functional modifications
Third-harmonic generation monitoring of femtosecond laser-induced in-volume functional modifications Open
During the last two decades, ultrafast in-volume laser-based processing of transparent materials has emerged as a key 3D-printing method for manufacturing a variety of complex integrated photonic devices and micro-parts. Yet, identifying s…
View article: Third-harmonic generation monitoring of femtosecond laser-induced in-volume functional modifications
Third-harmonic generation monitoring of femtosecond laser-induced in-volume functional modifications Open
During the last two decades, ultrafast in-volume laser-based processing of transparent materials has emerged as a key 3D-printing method for manufacturing a variety of complex integrated photonic devices and micro-parts. Yet, identifying s…
View article: An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs
An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs Open
In a MOSFET transistor, the subthreshold swing defines the switching efficiency, and the associated slope factor, or so-called body factor, is a critical parameter in charge-based models. However, in an advanced Fully -Depleted Silicon-On-…
View article: Cryogenic InGaAs HEMT-Based Switches For Quantum Signal Routing
Cryogenic InGaAs HEMT-Based Switches For Quantum Signal Routing Open
We demonstrate cryogenic switching devices based on HEMT technology for scalable quantum computer (QC) control and readout signal routing. The switches are implemented in a quantum well network design without metal contacts between gates, …
View article: Novel Approach to FDSOI Threshold Voltage Model Validated at Cryogenic Temperatures
Novel Approach to FDSOI Threshold Voltage Model Validated at Cryogenic Temperatures Open
The paper presents a novel approach to the modeling of the back-gate dependence of the threshold voltage of Fully Depleted Silicon-On-Insulator (FDSOI) MOSFETs down to cryogenic temperatures by using slope factors with a gate coupling effe…
View article: Cryogenic InGaAs HEMT-Based Switches For Quantum Signal Routing
Cryogenic InGaAs HEMT-Based Switches For Quantum Signal Routing Open
We demonstrate cryogenic switching devices based on HEMT technology for scalable quantum computer (QC) control and readout signal routing. The switches are implemented in a quantum well network design without metal contacts between gates, …
View article: Simple Expression of the Thermal Noise Excess Factor for LNA Design
Simple Expression of the Thermal Noise Excess Factor for LNA Design Open
This paper proposes a simple model of the thermal noise excess factor in saturation gamma(nsat) for short-channel transistors affected by velocity saturation. It is shown that gamma(nsat) in strong inversion and saturation under velocity s…
View article: Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology
Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology Open
This paper presents the RF characterization and modeling of a 22nm FDSOI technology down to 3.3K for quantum computing applications. The equivalent small-signal components are extracted analytically and automatically from the de-embedded t…
View article: Comprehensive Design-oriented FDSOI EKV Model
Comprehensive Design-oriented FDSOI EKV Model Open
The work presents the comprehensive design-oriented EKV model for FDSOI technologies, including the backgate effects and geometry dependence. Despite its simplicity, the model correctly captures not only the dependence of the threshold vol…
View article: Rapid, Sensitive and Selective Optical Glucose Sensing with Stimulated Raman Scattering (SRS)
Rapid, Sensitive and Selective Optical Glucose Sensing with Stimulated Raman Scattering (SRS) Open
Optical blood glucose sensing offers pain-free, non-invasive, continuous monitoring with minimum risk of infection since it does not require breaking the skin barrier. Among various optical detection and spectroscopic techniques, only Rama…
View article: Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs
Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs Open
This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching bet…
View article: Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors
Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors Open
This paper compares two in-pixel source follower stage designs for low noise CMOS image sensors embedded both on a same 5 mm by 5 mm chip fabricated in a 180 nm CIS process. The presented chip embeds two pixel variants, one based on a body…
View article: Optimized Detection of Hypoglycemic Glucose Ranges in Human Serum by Raman Spectroscopy with 532 nm Laser Excitation
Optimized Detection of Hypoglycemic Glucose Ranges in Human Serum by Raman Spectroscopy with 532 nm Laser Excitation Open
Raman scattering-based biomedical detection has usually been proposed with near-infrared laser sources. However, a low-cost CMOS imager's quantum efficiency is optimum around green wavelength, and their sensitivity substantially decreases …
View article: Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses
Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses Open
This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated u…
View article: An Optimized Low-Power Band-Tuning TX for Short-Range FMCW Radar in 22-nm FDSOI CMOS
An Optimized Low-Power Band-Tuning TX for Short-Range FMCW Radar in 22-nm FDSOI CMOS Open
The paper presents a low-power transmitter (TX) as a part of a fully integrated 57-66 GHz FMCW radar system. The TX path includes a BPSK modulator and it is optimized for short-range operation with 0 dBm output power. A band-tuning techniq…
View article: Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing
Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing Open
This study presents the first in depth characterization of deep cryogenic electrical behavior of a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad range of applications, including quantum computing, quan…
View article: A 60 GHz QDCO with 11 GHz Seamless Tuning for Low-Power FMCW Radars in 22-nm FDSOI
A 60 GHz QDCO with 11 GHz Seamless Tuning for Low-Power FMCW Radars in 22-nm FDSOI Open
This paper presents the design of a 60GHz Quadrature Digitally-Controlled Oscillator for a low-power Frequency-Modulated Continuous Wave radar System-on-Chip. The accurate detection of vital signs requires 1 and Q demodulation of the recei…
View article: In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation
In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation Open
In this paper, the influence of temperature and back-gate bias is experimentally investigated on 22 nm FDSOI CMOS process. Cryogenic DC characterization was carried out under various back-gate voltages, V back , from 2.95 K back to 300 K. …
View article: Power-Optimized Digitally Controlled Oscillator in 28-nm CMOS for Low-Power FMCW Radars
Power-Optimized Digitally Controlled Oscillator in 28-nm CMOS for Low-Power FMCW Radars Open
This work presents the design of a 24-GHz digitally controlled oscillator (DCO) in an advanced 28-nm bulk CMOS technology for short-range frequency-modulated continuous-wave radar system-on-chip for mobile and Internet-of-Things devices. T…