Christopher Schuck
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Imaging of dark line defect growth in high-power diode laser cavities using broadband near infrared light emission from the laser cavity Open
An in situ and nondestructive technique is developed to image the formation and evolution of dark line defects in the cavity of a high-power diode laser. The technique uses broadband near infrared emission that originates in the laser's co…
Aging Mechanisms of Broad Area ∼800 nm Laser Diodes Open
Here, this work presents a comprehensive study of early aging behavior (15 cm-3 showed significantly longer delay before the onset of aging (incubation time) than devices with less than 1 × 1015 cm-3 oxygen. Generation-Recombination curren…
View article: Single-photon generation from self-assembled GaAs/InAlAs(111)A quantum dots with ultrasmall fine-structure splitting
Single-photon generation from self-assembled GaAs/InAlAs(111)A quantum dots with ultrasmall fine-structure splitting Open
We present a novel semiconductor single-photon source based on tensile-strained (111)-oriented GaAs/InAlAs quantum dots (QDs) exhibiting ultrasmall exciton fine-structure splitting (FSS) of ≤ 8 µ eV. Using low-temperature micro-photolumine…
Examination of the Shape and Structure of (111)-oriented GaAs Tensile-Strained Quantum Dots using Transmission Electron Microscopy, Electron Energy Loss Spectroscopy, and Atom Probe Tomography Open
Researchers have extensively studied and used semiconductor quantum dots (QDs) as dislocation free and optically tunable nanostructures in a variety of optoelectronic applications.In particular, compressively-strained InAs QD self-assembly…
(111)-Oriented Gallium Arsenide Tensile-Strained Quantum Dots Tailored for Entangled Photon Emission Open
The use of molecular beam epitaxy (MBE) to create quantum dots (QDs) embedded in solid-state semiconductor media has been at the forefront of novel and record-breaking optoelectronic device development for many years. However, the wide ran…
Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy Open
The authors report on a comprehensive study of the growth of coherently strained GaAs quantum dots (QDs) on (111) surfaces via the Stranski–Krastanov (SK) self-assembly mechanism. Recent reports indicate that the long-standing challenges, …