Chungang Guo
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View article: Design method, performance evaluation, and tolerance analysis of the rectilinear cooling channel for a muon collider
Design method, performance evaluation, and tolerance analysis of the rectilinear cooling channel for a muon collider Open
The muon collider has the potential to be a powerful tool for the exploration of frontiers in particle physics. In order to reach high luminosity, the 6D emittance of the muon beam needs to be reduced by several orders of magnitude. The co…
View article: Left bundle branch area pacing prevails over His bundle pacing for heart failure patients undergoing atrioventricular node ablation in permanent atrial fibrillation: a network meta-analysis
Left bundle branch area pacing prevails over His bundle pacing for heart failure patients undergoing atrioventricular node ablation in permanent atrial fibrillation: a network meta-analysis Open
View article: Material design accelerated by large language models: end-to-end empowerment from knowledge mining to intelligent design
Material design accelerated by large language models: end-to-end empowerment from knowledge mining to intelligent design Open
With the rapid development of artificial intelligence technology, large language models (LLMs) have become the core driving force for the paradigm shift in materials science research. This review explores the comprehensive role of LLMs in …
View article: Incoherent tune measurement of an ion storage ring using single ions
Incoherent tune measurement of an ion storage ring using single ions Open
The measurement of betatron tunes is important in the studies of beam dynamics in circular accelerators. Here, we report a new method to extract the fractional tune values using revolution times of single ions stored for a few hundred turn…
View article: Update of high voltage isolation control and monitoring system for HVE-400 ion implanter
Update of high voltage isolation control and monitoring system for HVE-400 ion implanter Open
HVE-400 ion implanter is special ion implantation equipment for semiconductor materials boron and phosphorus doping. The ion source and extraction deflection system are at high voltage platform, while the corresponding control system is at…
View article: Enormous Paramagnetism Observed at Low Temperatures in Gd Implanted Mos2
Enormous Paramagnetism Observed at Low Temperatures in Gd Implanted Mos2 Open
View article: Digital Transformation of High Voltage Isolation Control and Monitoring System for HVE-400 Ion Implanter
Digital Transformation of High Voltage Isolation Control and Monitoring System for HVE-400 Ion Implanter Open
HVE-400 ion implanter is special ion implantation equipment for semiconductor materials boron and phosphorus doping. The ion source and extraction deflection system are at high voltage platform, while the corresponding control system is at…
View article: Implantation-synthesized Cu/Cu–Zn core/shell nanoparticles in SiO_2 and their optical properties
Implantation-synthesized Cu/Cu–Zn core/shell nanoparticles in SiO_2 and their optical properties Open
Silica glasses were pre-implanted with 60 keV Zn ions at different fluences of 1 × 1016 and 1 × 1017 cm−2, respectively, and were then subjected to implantation of 45 keV Cu ions at a fluence of 5 × 1016 cm−2. The formation of metallic nan…