Chun-Kuei Chen
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View article: High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect Open
In this article, we demonstrate a low-thermal budget defect-engineered process to achieve top-gated (TG) oxide–semiconductor ferroelectric field-effect transistors (FeFETs). The demonstrated TG FeFETs, with the channel length scaled down t…
View article: First Demonstration of Ultra-low D<sub>it</sub> Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
First Demonstration of Ultra-low D<sub>it</sub> Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch Open
We demonstrate, for the first time, a short-channel (L G :40nm) back-end-of-line (BEOL) compatible top-gated (TG) self-aligned FeFETs with the ultra-low interface/bulk trap density (D it /D bulk ) down to 10 11 cm -2 eV -1 , a 100x improve…
View article: Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm I<sub>ON</sub> at V<sub>DS</sub> 1V, High µ-84 cm<sup>2</sup>/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing
Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm I<sub>ON</sub> at V<sub>DS</sub> 1V, High µ-84 cm<sup>2</sup>/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing Open
For the first time, we investigated ultra-short-channel ZnO thin-film FETs with L ch = 8 nm with extremely scaled channel thickness t ZnO of 3nm, the device exhibits ultra-low sub-pA/µm off leakage (1.2 pA/µm), high electron mobility (µ ef…
View article: Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor
Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor Open
A ferroelectric field-effect transistor (FeFET), capable of logic and memory functionalities in a single device, is a promising three-terminal memtransistor that enables high-performance in-memory computing for non Von Neumann architecture…
View article: Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm<sup>2</sup>/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)
Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm<sup>2</sup>/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C) Open
In this work, we report a facile approach to significantly improve the electrical performances of a bottom-gated zinc oxide (ZnO) FET through In-situ annealing treatment of ZnO channel layer. We demonstrated ZnO FETs with extremely scaled …