Chu‐Young Cho
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View article: Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity
Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity Open
We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-electron-mobility transistors on three distinct substrates, including sapphire, SiC, and Si. This model considered both a linear and non-linear thermal re…
View article: Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors Open
View article: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors Open
View article: Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs
Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs Open
We have studied the effects of proton irradiation on the AlGaN/GaN HEMTs with AlN buffer layer as well as conventional GaN buffer layer. It was found that a short time proton irradiation (~ 50 sec) can promote beneficial effects on device …
View article: Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors
Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors Open
AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temp…
View article: Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor Open
View article: AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform
AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform Open
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion…
View article: Enhanced optical output and reduction of the quantum-confined Stark effect in surface plasmon-enhanced green light-emitting diodes with gold nanoparticles
Enhanced optical output and reduction of the quantum-confined Stark effect in surface plasmon-enhanced green light-emitting diodes with gold nanoparticles Open
We report the optical properties of localized surface plasmon (LSP)-enhanced green light-emitting diodes (LEDs) containing gold (Au) nanoparticles embedded in a p-GaN layer. The photoluminescence (PL) and electroluminescence (EL) intensiti…