Conny Becht
YOU?
Author Swipe
View article: Luminescence from hot carrier interband recombination in wide InGaN quantum wells
Luminescence from hot carrier interband recombination in wide InGaN quantum wells Open
Direct radiative recombination of high excited confined states across the band gap is observed as a broad emission band above the InGaN band edge in photoluminescence and electroluminescence for wide InGaN quantum wells (QWs). The observat…
View article: Fast non-equilibrium carrier dynamics in polar InGaN/GaN structures with wide quantum wells
Fast non-equilibrium carrier dynamics in polar InGaN/GaN structures with wide quantum wells Open
We analyze the time-resolved photoluminescence (PL) from the bulklike continuum of excited states of 450 nm emitting InGaN/GaN device structures that are based on wide quantum wells with 25 nm thickness. In its spectrally integrated form, …
View article: Defects in InGaN QW structures: microscopic properties and modeling
Defects in InGaN QW structures: microscopic properties and modeling Open
Defects can significantly modify the electrical and optical properties of quantum well (QW) structures based on InGaN. We present an overview of our recent results on the properties of point and extended defects in InGaN/GaN QW devices. By…
View article: V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis Open
By combining microscopy investigation, light-beam induced current (LBIC), micro-photoluminescence ( mu -PL), and micro-electroluminescence ( mu -EL) characterization, we investigate the electrical and optical properties of V-pits and trenc…
View article: Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence
Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence Open
Lateral ambipolar diffusion in an InGaN/GaN single quantum well (SQW) structure grown on bulk GaN is studied by microphotoluminescence (μPL) investigations. The analysis is done via pinhole scans, that is, by decoupling the excitation area…