Conrad Spindler
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View article: The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cells
The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cells Open
An in-depth understanding of the electronic properties of grain boundaries (GB) in polycrystalline semiconductor absorbers is of high importance since their charge carrier recombination rates may be very high and hence limit the solar cell…
View article: Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors
Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors Open
Photoluminescence characterization of semiconductors is a powerful tool for studying shallow and deep defects. Excitation-intensity-dependent measurements at low temperatures are typically analyzed to distinguish between exciton and defect…
View article: Surface characterization of epitaxial Cu-rich CuInSe<sub>2</sub> absorbers
Surface characterization of epitaxial Cu-rich CuInSe<sub>2</sub> absorbers Open
We investigated the electrical properties of epitaxial Cu-rich CuInSe 2 by Kelvin probe force microscopy (KPFM) under ambient and ultra-high vacuum conditions. We first measured the sample under ambient conditions before and after potassiu…
View article: Interdiffusion and Doping Gradients at the Buffer/Absorber Interface in Thin-Film Solar Cells
Interdiffusion and Doping Gradients at the Buffer/Absorber Interface in Thin-Film Solar Cells Open
An accurate determination of the net dopant concentration in photovoltaic absorbers is critical for understanding and optimizing solar cell performance. The complex device structure of multilayered thin-film solar cells poses challenges to…
View article: Absorption Coefficient of a Semiconductor Thin Film from Photoluminescence
Absorption Coefficient of a Semiconductor Thin Film from Photoluminescence Open
The photoluminescence (PL) of semiconductors can be used to determine their absorption coefficient (a) using Planck's generalized law. The standard method, suitable only for self-supported thick samples, like wafers, is extended to multila…
View article: Revisiting radiative deep-level transitions in CuGaSe2 by photoluminescence
Revisiting radiative deep-level transitions in CuGaSe2 by photoluminescence Open
Recent defect calculations suggest that the open circuit voltage of CuGaSe2 solar cells can be limited by deep intrinsic electron traps by GaCu antisites and their complexes with Cu-vacancies. To gain experimental evidence, two radiative d…
View article: Doping mechanism in pure CuInSe2
Doping mechanism in pure CuInSe2 Open
We investigate the dopant concentration and majority carrier mobility in epitaxial CuInSe2 thin films for different copper-to-indium ratios and selenium excess during growth. We find that all copper-poor samples are n-type, and that hoppin…