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View article: Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation Open
Bipolar degradation poses a significant concern for the reliability of SiC bipolar power devices. The basic cause for bipolar degradation is expansion of Shockley Stacking Faults SSFs. These glide planes can be pinned and prevented from ex…
View article: Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates
Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates Open
The growing demand for 4H-SiC substrates in power device fabrication has encouraged the development of engineered substrates to reduce costs and facilitate wafer re-usability for effective material utilization. This work presents a novel a…
View article: Study on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- Measurements
Study on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- Measurements Open
Commercially available 4H-SiC substrate quality has improved over time, and this has extensively reduced defect concentration in the active epitaxial layer, during epi growth conditions at the interface. The objective of this work is to in…
View article: A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation
A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation Open
In this paper, the modeling of SJ-MOSFETs beyond the voltage class of 3.3 kV simulated with verified deep aluminum box-like shaped profiles by using TCAD simulation is described. The simulation results are used to investigate the influence…
View article: 4He irradiation of zircon, ZrSiO4, using a micro-patterned, Si-based energy filter
4He irradiation of zircon, ZrSiO4, using a micro-patterned, Si-based energy filter Open
The quantitative evaluation of alpha-particle damage in the mineral zircon, ZrSiO4, using 4He irradiation experiments is difficult because the vast majority of atomic knock-ons in the target are concentrated in a narrow depth range near th…