Cory Lund
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View article: Review—The Physics of Recombinations in III-Nitride Emitters
Review—The Physics of Recombinations in III-Nitride Emitters Open
The physics of carrier recombinations in III-nitride light emitters are reviewed, with an emphasis on experimental investigations. After a discussion of various methods of measuring recombination dynamics, important results on recombinatio…
View article: Metal-Organic Chemical Vapor Deposition of N-polar InGaN and InN for Electronic Devices
Metal-Organic Chemical Vapor Deposition of N-polar InGaN and InN for Electronic Devices Open
While most commercial gallium nitride (GaN) devices are grown in the (0001) Ga-polar orientation, the N-polar (0001 ̅) orientation is advantageous for heterostructures which can benefit from reversed polarization fields including transistor…
View article: High Spatial Resolution Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography study of Indium segregation in N-polar InGaN Quantum Wells
High Spatial Resolution Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography study of Indium segregation in N-polar InGaN Quantum Wells Open
Journal Article High Spatial Resolution Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography study of Indium segregation in N-polar InGaN Quantum Wells Get access Massimo Catalano, Massimo Catalano Department of Materials Science…
View article: Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016)
Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016) Open
InGaN alloys have been attracting tremendous interest because of the large range of wavelengths covered when tuning the In to Ga ratio, offering extensive band gap engineering possibilities as well as the opportunity to achieve longer wave…
View article: Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness
Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness Open
The dry etching of GaN to form deep vertical structures is a critical step in many power device processes. To accomplish this, a chlorine and argon etch is investigated in detail to satisfy several criteria simultaneously such as surface r…