Cristina Aguilera-Pedregosa
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View article: Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors
Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors Open
Resistive switching devices based on the Au/Ti/TiO2/Au stack were developed. In addition to standard electrical characterization by means of I-V curves, scanning thermal microscopy was employed to localize the hot …
View article: Variability and power enhancement of current controlled resistive switching devices
Variability and power enhancement of current controlled resistive switching devices Open
characterized using both current and voltage sweeps, with the device resistance and its cycle-to-cycle variability
\nbeing analysed in each case. Experimental measurements indicate a clear improvement on resistance states
\nstability when …
View article: Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories
Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories Open
A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to…
View article: Spiking neural networks based on two-dimensional materials
Spiking neural networks based on two-dimensional materials Open
View article: Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices
Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices Open
The variability of memristive devices using
\nmultilayer hexagonal boron nitride (h-BN) coupled with Ti
\nand Au electrodes (i.e., Au/Ti/h-BN/Au) is analyzed in
\ndepth using different numerical techniques. We extract the
\nreset voltage u…
View article: An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices Open
An in-depth simulation and experimental study has been performed to analyze thermal effects on the variability of resistive memories. Kinetic Monte Carlo (kMC) simulations, that reproduce well the nonlinearity and stochasticity of resistiv…