D. E. Jesson
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View article: Compositional imaging of semiconductor interfaces by Z-contrast scanning transmission electron microscope (STEM)
Compositional imaging of semiconductor interfaces by Z-contrast scanning transmission electron microscope (STEM) Open
Conventional high-resolution electron microscopy is a coherent imaging technique best thought of as an attempt to reconstruct an image of the object by recombining the diffracted beams emerging from the sample. The image represents a coher…
View article: Mapping the surface phase diagram of GaAs(001) using droplet epitaxy
Mapping the surface phase diagram of GaAs(001) using droplet epitaxy Open
We combine droplet epitaxy with low energy electron microscopy imaging techniques to map the surface phase diagram of GaAs(001). The phase patterns produced in droplet epitaxy are interpreted using a simple model which links the spatial co…
View article: Surface Phase Metastability during Langmuir Evaporation
Surface Phase Metastability during Langmuir Evaporation Open
We have directly imaged the spontaneous formation of metastable surface phase domains on GaAs(001) during Langmuir evaporation. Eventually, these metastable phases transform to the thermodynamically stable parent phase, producing a dynamic…
View article: On the sensitivity of convergent beam low energy electron diffraction patterns to small atomic displacements
On the sensitivity of convergent beam low energy electron diffraction patterns to small atomic displacements Open
Multiple scattering simulations are developed and applied to assess the potential of convergent beam low-energy electron diffraction (CBLEED) to distinguish between various reconstructions of the Si(001) surface. This is found to be readil…
View article: Simulation of convergent-beam low-energy electron diffraction on Si(001) reconstructions
Simulation of convergent-beam low-energy electron diffraction on Si(001) reconstructions Open
Research results based upon this code and data are published at http://doi.org/10.1016/j.apsusc.2019.05.274. The image simulation of convergent beam low energy electron diffraction (CBLEED) patterns are used to determine the sensitivity of…
View article: Simulation of convergent-beam low-energy electron diffraction on Si(001) reconstructions
Simulation of convergent-beam low-energy electron diffraction on Si(001) reconstructions Open
Research results based upon this code and data are published at http://doi.org/10.1016/j.apsusc.2019.05.274. The image simulation of convergent beam low energy electron diffraction (CBLEED) patterns are used to determine the sensitivity of…
View article: Selected energy dark-field imaging using low energy electrons for optimal surface phase discrimination
Selected energy dark-field imaging using low energy electrons for optimal surface phase discrimination Open
We propose a general strategy for surface phase discrimination by dark-field imaging using low energy electrons, which maximizes contrast using diffraction spots, at selected optimal energies. The method can be automated to produce composi…
View article: SIMULATION OF MIRROR ELECTRON MICROSCOPY CAUSTIC IMAGES IN THREE-DIMENSIONS
SIMULATION OF MIRROR ELECTRON MICROSCOPY CAUSTIC IMAGES IN THREE-DIMENSIONS Open
A full, three-dimensional (3D) ray tracing approach is developed to simulate the caustics visible in mirror electron microscopy (MEM). The method reproduces MEM image contrast resulting from 3D surface relief. To illustrate the potential o…
View article: Planar regions of GaAs (001) prepared by Ga droplet motion
Planar regions of GaAs (001) prepared by Ga droplet motion Open
The authors describe a simple method for obtaining planar regions of GaAs (001) suitable for surface science studies. The technique, which requires no buffer layer growth, atomic hydrogen source, or the introduction of As flux, employs con…
View article: Congruent evaporation temperature of molecular beam epitaxy grown GaAs (001) determined by local droplet etching
Congruent evaporation temperature of molecular beam epitaxy grown GaAs (001) determined by local droplet etching Open
The congruent evaporation temperature Tc of GaAs (001) is critical for many technological processes and is fundamental to the control and stability of Ga droplets for quantum structure fabrication. We apply the technique of local droplet e…