D. A. Estyunin
YOU?
Author Swipe
View article: Electronic structure of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mrow><mml:mo>(</mml:mo><mml:msub><mml:mi>Mn</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Pb</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mo>)</mml:mo></mml:mrow><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>: Experimental evidence of topological phase transition
Electronic structure of : Experimental evidence of topological phase transition Open
The investigation of methods to control and optimize the physical properties of the intrinsic magnetic topological insulator (TI) MnBi2Te4 is a critical challenge for the development of functional materials for quantum technologies and spi…
View article: Phase transitions, Dirac and Weyl semimetal states in Mn1−xGexBi2Te4
Phase transitions, Dirac and Weyl semimetal states in Mn1−xGexBi2Te4 Open
View article: Probing the Interaction Between Topological and Rashba-like Surface States in MnBi$_2$Te$_4$ Through Sn Doping
Probing the Interaction Between Topological and Rashba-like Surface States in MnBi$_2$Te$_4$ Through Sn Doping Open
The presence of Rashba-like surface states (RSS) in the electronic structure of topological insulators (TIs) has been a longstanding topic of interest due to their significant impact on electronic and spin structures. In this study, we inv…
View article: Spin texture tunability in Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ through varying Ge Concentration
Spin texture tunability in Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ through varying Ge Concentration Open
The spin-resolved dispersion dependencies for the topological insulator Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ in the $\bar{\rm K}\barΓ\bar{\rm K}'$ path of the Brillouin zone were studied by spin- and angle-resolved photoemission spectroscopy using…
View article: The electronic structure of Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$: experimental evidence of topological phase transition
The electronic structure of Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$: experimental evidence of topological phase transition Open
This study investigates methods for controlling the physical properties of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ (MBT) by substituting Mn with Pb in Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$ (MPBT) solid solutions. This substituti…
View article: Interfacing two-dimensional and magnetic topological insulators: Bi bilayer on MnBi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si34.svg" display="inline" id="d1e544"><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>Te<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si35.svg" display="inline" id="d1e552"><mml:msub><mml:mrow/><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msub></mml:math>-family materials
Interfacing two-dimensional and magnetic topological insulators: Bi bilayer on MnBiTe-family materials Open
View article: Phase transitions, Dirac and WSM states in Mn1−xGexBi2Te4
Phase transitions, Dirac and WSM states in Mn1−xGexBi2Te4 Open
Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental andtheoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy…
View article: Phase transitions, Dirac and WSM states in $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$
Phase transitions, Dirac and WSM states in $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ Open
Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energ…
View article: Comparative Study of Magnetic Properties of (Mn1−xAxIV)Bi2Te4 AIV = Ge, Pb, Sn
Comparative Study of Magnetic Properties of (Mn1−xAxIV)Bi2Te4 AIV = Ge, Pb, Sn Open
We investigated the magnetic properties of the antiferromagnetic (AFM) topological insulator MnBi2Te4 with a partial substitution of Mn atoms by non-magnetic elements (AIV = Ge, Pb, Sn). Samples with various element concentrations (10–80%)…
View article: Comparative Study of Magnetic Properties of (Mn$_{1-x}$A$_x^{IV}$)Bi2Te4 A$_x^{IV}$ = Ge, Pb, Sn
Comparative Study of Magnetic Properties of (Mn$_{1-x}$A$_x^{IV}$)Bi2Te4 A$_x^{IV}$ = Ge, Pb, Sn Open
We investigated the magnetic properties of antiferromagnetic (AFM) topological insulator MnBi$_2$Te$_4$ with partial substitution of Mn atoms by non-magnetic elements (A$_x^{IV}$ = Ge, Pb, Sn). Samples with various element concentrations (…
View article: Evolution of Mn1−xGexBi2Te4 Electronic Structure under Variation of Ge Content
Evolution of Mn1−xGexBi2Te4 Electronic Structure under Variation of Ge Content Open
One of the approaches to manipulate MnBi2Te4 properties is the magnetic dilution, which inevitably affects the interplay of magnetism and band topology in the system. In this work, we carried out angle-resolved photoemission spectroscopy (…
View article: Joint Intercalation of Ultrathin Fe and Co Films under a Graphene Buffer Layer on a SiC(0001) Single Crystal
Joint Intercalation of Ultrathin Fe and Co Films under a Graphene Buffer Layer on a SiC(0001) Single Crystal Open
The joint intercalation of Co and Fe atoms under a graphene buffer layer synthesized on a SiC(0001) single crystal has been studied. Intercalation has been performed by means of the alternating deposition of ultrathin Fe and Co metal films…
View article: Topological Phase Transitions Driven by Sn Doping in (Mn1−xSnx)Bi2Te4
Topological Phase Transitions Driven by Sn Doping in (Mn1−xSnx)Bi2Te4 Open
The antiferromagnetic ordering that MnBi2Te4 shows makes it invariant with respect to the combination of the time-reversal and primitive-lattice translation symmetries, giving rise to its topologically nontrivial nature and a number of fun…
View article: Erratum to: Electronic and Spin Structure of Topological Surface States in MnBi4Te7 and MnBi6Te10 and Their Modification by an Applied Electric Field
Erratum to: Electronic and Spin Structure of Topological Surface States in MnBi4Te7 and MnBi6Te10 and Their Modification by an Applied Electric Field Open
An Erratum to this paper has been published: https://doi.org/10.1134/S0021364023340015
View article: Mixed Type of the Magnetic Order in Intrinsic Magnetic Topological Insulators Mn(Bi,Sb)2Te4
Mixed Type of the Magnetic Order in Intrinsic Magnetic Topological Insulators Mn(Bi,Sb)2Te4 Open
It is known that Mn(Bi 1 – x Sb x ) 2 Te 4 is an intrinsic magnetic topological insulator, where the Dirac point can be localized at the Fermi level by substituting Bi atoms for Sb atoms to implement the quantum anomalous Hall effect and o…
View article: Electronic and Spin Structure of Topological Surface States in MnBi4Te7 and MnBi6Te10 and Their Modification by an Applied Electric Field
Electronic and Spin Structure of Topological Surface States in MnBi4Te7 and MnBi6Te10 and Their Modification by an Applied Electric Field Open
The electronic and spin structure of topological surface states in antiferromagnetic topological insulators MnBi 4 Te 7 and MnBi 6 Te 10 consisting of a sequence of magnetic MnBi 2 Te 4 septuple layers separated by nonmagnetic Bi 2 Te 3 qu…
View article: Factors influencing the energy gap in topological states of antiferromagnetic MnBi$_2$Te$_4$
Factors influencing the energy gap in topological states of antiferromagnetic MnBi$_2$Te$_4$ Open
The experimentally measured angle-resolved photoemission dispersion maps for MnBi$_{2}$Te$_{4}$ samples, which show different energy gaps at the Dirac point (DP), are compared with the results of theoretical calculations to find the condit…
View article: Electronic Structure of Magnetic Topological Insulators Mn(Bi1 – xSbx)2Te4 with Various Concentration of Sb Atoms
Electronic Structure of Magnetic Topological Insulators Mn(Bi1 – xSbx)2Te4 with Various Concentration of Sb Atoms Open
Intrinsic magnetic topological insulator MnBi 2 Te 4 provides a promising platform to implement the quantum anomalous Hall effect at increased temperatures and other unique topological effects. However, to do this, the energy gap opening a…
View article: Native point defects and their implications for the Dirac point gap at MnBi2Te4(0001)
Native point defects and their implications for the Dirac point gap at MnBi2Te4(0001) Open
View article: Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI
Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI Open
View article: Sample-dependent Dirac-point gap in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>MnBi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>and its response to applied surface charge: A combined photoemission and<i>ab initio</i>study
Sample-dependent Dirac-point gap inand its response to applied surface charge: A combined photoemission and<i>ab initio</i>study Open
Recently discovered intrinsic antiferromagnetic topological insulator MnBi2Te4 presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important char…
View article: Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI
Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI Open
Polar Rashba-type semiconductor BiTeI doped with magnetic elements constitutes one of the most promising platforms for the future development of spintronics and quantum computing thanks to the combination of strong spin-orbit coupling and …
View article: Change of the topological surface states induced by ferromagnetic metals deposited on BiSbTeSe2
Change of the topological surface states induced by ferromagnetic metals deposited on BiSbTeSe2 Open
The energy gap was revealed in the Dirac cone of the BiSbTeSe2 topological insulator after the submonolayer deposition of a ferromagnetic metal. As a ferromagnet, cobalt and manganese were used. Such way of the energy gap opening is novel …
View article: Probe-dependent Dirac-point gap in the gadolinium-doped thallium-based topological insulator <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Tl</mml:mi><mml:msub><mml:mi>Bi</mml:mi><mml:mrow><mml:mn>0.9</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Gd</mml:mi><mml:mrow><mml:mn>0.1</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Se</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>
Probe-dependent Dirac-point gap in the gadolinium-doped thallium-based topological insulator Open
A tunable gap in the topological surface state is of great interest for novel spintronic devices and applications in quantum computing. Here, we study the surface electronic structure and magnetic properties of the Gd-doped topological ins…
View article: Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator $${\hbox {MnBi}}_2 {\hbox {Te}}_4$$
Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator $${\hbox {MnBi}}_2 {\hbox {Te}}_4$$ Open
View article: Tunable 3D/2D magnetism in the (MnBi2Te4)(Bi2Te3)m topological insulators family
Tunable 3D/2D magnetism in the (MnBi2Te4)(Bi2Te3)m topological insulators family Open
Feasibility of many emergent phenomena that intrinsic magnetic topological insulators (TIs) may host depends crucially on our ability to engineer and efficiently tune their electronic and magnetic structures. Here we report on a large fami…
View article: Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi$_2$Te$_4$
Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi$_2$Te$_4$ Open
Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) und…
View article: Signatures of temperature driven antiferromagnetic transition in the electronic structure of topological insulator MnBi2Te4
Signatures of temperature driven antiferromagnetic transition in the electronic structure of topological insulator MnBi2Te4 Open
In this work, we employed angle resolved photoemission spectroscopy (ARPES) to analyze the temperature dependent changes in the electronic structure of the first antiferromagnetic topological insulator MnBi2Te4 upon crossing the Néel tempe…
View article: Band gap opening at the Dirac point in Co/BiSbTeSe2(0001) system
Band gap opening at the Dirac point in Co/BiSbTeSe2(0001) system Open
Sub-angstrom Co coverage, being deposited on BiSbTeSe2(0001) surface at 200-330 C, opens a band gap at the Dirac point, with the shift of the Dirac point position caused by RT adsorbate pre-deposition. Temperature dependent measurements in…
View article: Variety of magnetic topological phases in the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ family
Variety of magnetic topological phases in the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ family Open
Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibil…