D. Eyidi
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View article: Materials Science Forum
Materials Science Forum Open
The effect of grain size on the deformation twinning and de-twinning in a nanocrystalline Ni-Fe alloy was investigated using transmission electron microscopy. Specimens with different grain sizes were obtained by severely deforming an elec…
View article: Synthesis and characterization of a new (Ti1-yCuy)2(Al1-xCux)C MAX phase solid solution
Synthesis and characterization of a new (Ti1-yCuy)2(Al1-xCux)C MAX phase solid solution Open
New [Ti(1-y)Cuy]2[Al(1-x)Cux]C solid solutions have been synthesized by solid-state reaction performed at 760 and 800 °C on compacted Ti2AlC-40 vol % Cu composite particles produced by mechanical milling. Using XRD and EDXS, it is demonstr…
View article: Correction to Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN
Correction to Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN Open
[This corrects the article DOI: 10.1021/acsaem.2c01672.].
View article: Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN
Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN Open
Nowadays, making thermoelectric materials more efficient in energy conversion is still a challenge. In this work, to reduce the thermal conductivity and thus improve the overall thermoelectric performances, point and extended defects were …
View article: Structure, stress, and mechanical properties of Mo-Al-N thin films deposited by dc reactive magnetron cosputtering: Role of point defects
Structure, stress, and mechanical properties of Mo-Al-N thin films deposited by dc reactive magnetron cosputtering: Role of point defects Open
In this work, the structural and mechanical properties of ternary Mo-Al-N alloys are investigated by combining thin film growth experiments and density functional theory (DFT) calculations. Mo1−xAlxNy thin films (∼300 nm thick), with vario…
View article: Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor
Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor Open
p-doped 4H-SiC substrates were implanted with 57Fe ions at energies ranging from 30 to 160 keV and subjected to a rapid thermal annealing in order to produce a homogeneous Fe concentration inside a 100 nm-thick region in the semiconducting…
View article: Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry
Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry Open
P-doped 6H-SiC substrates were implanted with 57Fe ions at 380 °C or 550 °C to produce a diluted magnetic semiconductor with an Fe homogeneous concentration of about 100 nm thickness. The magnetic properties were studied with 57Fe Conversi…
View article: Investigation of Nanoscale TiN/MoN Multilayered Systems, Fabricated Using Arc Evaporation
Investigation of Nanoscale TiN/MoN Multilayered Systems, Fabricated Using Arc Evaporation Open
Using the vacuum-arc evaporation method we fabricated periodic multilayered TiN/MoN structures with different bilayer periods λ ranging from 8 to 100 nm. We found that molybdenum nitride and titanium nitride layers grown on steel show loca…