Explanipedia

Transition metal monosilicide films on silicon for thermoelectronics and spintronics Open

N. G. Galkin, Konstantin N. Galkin, D. L. Goroshko, Evgenii Yu. Subbotin, O. A. Goroshko , et al. · 2025

The growth of both monoclinic and cubic phases for ultrathin (UT) and thin FeSi and CrSi films and only cubic phase for CoSi on silicon was proven as confirmed by HRTEM. At temperatures of 2–30 K, shunting is absent for the UT films and th…

Computational and experimental approach for investigating the microstructural parameters of a cadmium indium selenide (α-CdIn2Se4) ternary semiconducting compound Open

S. D. Dhruv, С. А. Шарко, А. И. Серокурова, Nikolai N. Novitskii, D. L. Goroshko , et al. · 2025

The Rietveld refinement (RR) method in the FullProf suite is used to evaluate the X-ray diffraction (XRD) data and estimate the thermal and structural parameters of the ternary semiconducting compound α-(phase) CdIn 2 Se 4 .

Substrate temperature modulated optical characterizations of α-CdIn2Se4 thin films grown by pulsed laser deposition technique Open

S. D. Dhruv, Tanvi Dudharejiya, С. А. Шарко, А. И. Серокурова, Nikolai N. Novitskii , et al. · 2025

By capturing the FTIR spectra of substrate temperature modulated CdIn 2 Se 4 thin films, the purity of the films generated at various substrate temperatures was confirmed.

Investigation of electrical transport mechanisms in an n-CdIn 2 Se 4 /Pt thin film Schottky diode fabricated by pulsed laser deposition Open

S. D. Dhruv, Tanvi Dudharejiya, С. А. Шарко, А. И. Серокурова, Nikolai N. Novitskii , et al. · 2025

FTIR spectrum of n-type CdIn 2 Se 4 thin films deposited on amorphous quartz glass substrates pre-coated with platinum at a substrate temperature of ≃550 K.

Thermoelectric Materials Based on Cobalt-Containing Sintered Silicon-Germanium Alloys Open

Nikita Grevtsov, Е. Б. Чубенко, Vitaly Bondarenko, Ilya Gavrilin, Alexey Dronov , et al. · 2024

Thermoelectric Materials Based on Cobalt-Containing Sintered Silicon-Germanium Alloys Open

Nikita Grevtsov, Е. Б. Чубенко, Vitaly Bondarenko, Ilya Gavrilin, Alexey Dronov , et al. · 2024

Impact of Porous Silicon Thickness on Thermoelectric Properties of Silicon-Germanium Alloy Films Produced by Electrochemical Deposition of Germanium into Porous Silicon Matrices Followed by Rapid Thermal Annealing Open

Nikita Grevtsov, Е. Б. Чубенко, Ilya Gavrilin, D. L. Goroshko, O. A. Goroshko , et al. · 2024

High-Density Insb Nanocrystal Array on Si(111) for Mid-Infrared Applications Open

S. A. Dotsenko, D. L. Goroshko, S. V. Chusovitina, Evgenii Yu. Subbotin, O. A. Goroshko , et al. · 2024

Electrochemically Deposited Germanium Nanowires: Structure and Resistivity Against High-Temperature Oxidation Open

D. L. Goroshko, Ilya Gavrilin, S. V. Chusovitina, Alexey Dronov, Р. Л. Волков , et al. · 2023

Influence of the temperature and substrate modification on the formation of continuous GaSb film on Si(111) by solid phase epitaxy Open

S. V. Chusovitina, Evgenii Yu. Subbotin, E. A. Chusovitin, D. L. Goroshko, S. A. Dotsenko , et al. · 2022

The solid-state formation of gallium antimonide on Si(111) from a stoichiometric mixture of GaSb in the temperature range of 300 °C–500 °C and thicknesses of 12–40 nm was studied under ultrahigh vacuum conditions. The influence of the pref…

Ca silicide films—promising materials for silicon optoelectronics Open

N. G. Galkin, Konstantin N. Galkin, D. L. Goroshko, S. A. Dotsenko, Oleg V. Kropachev , et al. · 2022

Single-phase films of semiconductor and semimetallic calcium silicides (Ca 2 Si, CaSi, and CaSi 2 ), as well as films with a significant contribution of Ca 5 Si 3 and Ca 14 Si 19 silicides, were grown on single-crystal silicon and sapphire…

The Nature of Ferromagnetism in a System of Self-Ordered α-FeSi2 Nanorods on a Si(111)-4° Vicinal Surface: Experiment and Theory Open

N. G. Galkin, D. L. Goroshko, И. А. Ткаченко, Aleksei Yu. Samardak, Konstantin N. Galkin , et al. · 2022

In this study, the appearance of magnetic moments and ferromagnetism in nanostructures of non-magnetic materials based on silicon and transition metals (such as iron) was considered experimentally and theoretically. An analysis of the rela…

Influence of Sacrificial Mg2Si Layers and Kinetic Parameters on the Growth, Structure and Optical Properties of Thin Ca2Si Films on Silicon Substrates Open

N. G. Galkin, Konstantin N. Galkin, Igor M. Chernev, Oleg V. Kropachev, D. L. Goroshko , et al. · 2022

Промоделировано сопряжение кристаллических решеток двумерных слоев Mg2Si с атомарно-чистыми поверхностями Si(001)2×1 и Si(110)"16×2". Толстые пленки выращены методом молекулярно-лучевой эпитаксии (МЛЭ) через формирование затравочных слоев …

Transport Properties of CaSi2 and Ca2Si Thin Films Open

L. Dermenji, K.G. Lisunov, Konstantin N. Galkin, D. L. Goroshko, E. A. Chusovitin , et al. · 2020

Resistivity, r ( T ), and Hall coefficient in weak ( B < 1 T) magnetic fields, R ( T ), are investigated in Ca 2 Si and CaSi 2 films at temperatures T between ~ 20 - 300 K. In CaSi 2 , r ( T ) is typical of metals increasing with T within …

Inhibitory Effects of Carrageenans on Endotoxin-Induced Inflammation Open

Irina M. Yermak, Aleksandra V. Volod’ko, Э. И. Хасина, В. Н. Давыдова, E. A. Chusovitin , et al. · 2020

The inhibitory effects of carrageenans (CRGs) on lipopolysaccharide (LPS) induced inflammation in a mouse model of endotoxemia and in complex therapy of patients with enteric infections of Salmonella etiology were studied. The atomic force…

Relationship of optical and photoelectric properties of films and diode heterostructures based on BaSi2 and Si(111) Open

N. G. Galkin, D. L. Goroshko, Victor Leonidovich Dubov, D. V. Fomin, Konstantin N. Galkin , et al. · 2019

Comparison of the optical properties of BaSi 2 polycrystalline films grown on silicon by solid-phase epitaxy with photoelectric properties of mesa diodes and photoresistors based on them showed that the isotype BaSi 2 -n/Si-n heterojunctio…

Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy Open

E. A. Chusovitin, S. A. Dotsenko, S. V. Chusovitina, D. L. Goroshko, А. К. Гутаковский , et al. · 2018

Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga–Sb mixture using solid-phase epitaxy at temperatures of 200–500 °C. Use of the solid-phase epitaxy method allowed the suppression of Ga surface diffusion and preve…

Phase composition evolution of iron silicide nanocrystals in the course of embedding into monocrystalline silicon Open

E. A. Chusovitin, D. L. Goroshko, S. A. Dotsenko, A. V. Shevlyagin, N. G. Galkin , et al. · 2017

Phase composition of iron silicide nanocrystals (NCs) in the course of formation by solid phase epitaxy (SPE) method, and embedding into silicon was studied. It was found that SPE of 0.4-nm-thick Fe film at 630 °C resulted in formation of …

Solid phase epitaxy formation of silicon-GaSb based heterostructures Open

D. L. Goroshko, E. A. Chusovitin, Igor M. Chernev, A. V. Shevlyagin, Konstantin N. Galkin , et al. · 2017

A double-layer heterostructure with embedded into single-crystalline silicon matrix nanocrystallites of gallium antimonide was grown. GaSb was formed by solid phase epitaxy method using Ga-Sb stoichiometric mixture of 2-nm-thick and a step…

Phase composition evolution of iron silicide nanocrystals in the course of embedding into monocrystalline silicon Open

E. A. Chusovitin, D. L. Goroshko, S. A. Dotsenko, A. V. Shevlyagin, N. G. Galkin , et al. · 2017

Phase composition of iron silicide nanocrystals (NCs) in the course of formation by solid phase epitaxy (SPE) method, and embedding into silicon was studied. It was found that SPE of 0.4-nm-thick Fe film at 630 °C resulted in formation of …

Solid phase epitaxy formation of silicon-GaSb based heterostructures Open

D. L. Goroshko, E. A. Chusovitin, Igor M. Chernev, A. V. Shevlyagin, Konstantin N. Galkin , et al. · 2017

A double-layer heterostructure with embedded into single-crystalline silicon matrix nanocrystallites of gallium antimonide was grown. GaSb was formed by solid phase epitaxy method using Ga-Sb stoichiometric mixture of 2-nm-thick and a step…

Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures Open

N. G. Galkin, Konstantin N. Galkin, S. A. Dotsenko, D. L. Goroshko, A. V. Shevlyagin , et al. · 2016

\nBy method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for t…

Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites Open

A. V. Shevlyagin, D. L. Goroshko, E. A. Chusovitin, Konstantin N. Galkin, N. G. Galkin , et al. · 2015

By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p + -Si/ p -Si/β-FeSi 2 nanocrystallites/ n -Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilaye…

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