D. P. Bour
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View article: Observation of a Fano Resonance at 92 meV (13.5 µm) in Al0.2Ga0.8N/GaN-Based Quantum Cascade Emitters
Observation of a Fano Resonance at 92 meV (13.5 µm) in Al0.2Ga0.8N/GaN-Based Quantum Cascade Emitters Open
We report on asymmetrically shaped Fano resonances in Al0.2Ga0.8N/GaN-based quantum cascade structures. In order to observe this type of resonance in electro-luminescence, a spectrally narrow feature must interact with a broad, quasi-conti…
View article: Correction: Hofstetter et al. Monolithically Integrated Michelson Interferometer Using an InGaAs/InAlAs Quantum Cascade Laser at λ = 4 µm. Photonics 2024, 11, 593
Correction: Hofstetter et al. Monolithically Integrated Michelson Interferometer Using an InGaAs/InAlAs Quantum Cascade Laser at λ = 4 µm. Photonics 2024, 11, 593 Open
There was an error in the original publication [...]
View article: Monolithically Integrated Michelson Interferometer Using an InGaAs/InAlAs Quantum Cascade Laser at λ = 4 µm
Monolithically Integrated Michelson Interferometer Using an InGaAs/InAlAs Quantum Cascade Laser at λ = 4 µm Open
In the present article, we propose a monolithically integrated Michelson interferometer using a λ = 4 µm InGaAs/InAlAs quantum cascade laser as the light source. By using simple fringe detection and a four-point interpolation on each fring…
View article: Interferometric Optical Pumping of an InGaN/GaN-Based Gain-Coupled Distributed Feedback Multi Quantum Well Laser
Interferometric Optical Pumping of an InGaN/GaN-Based Gain-Coupled Distributed Feedback Multi Quantum Well Laser Open
We describe an all-optical method to achieve—prior to further advanced processing steps—a perfect match of the relevant wavelength-sensitive parameters of an InGaN/GaN semiconductor distributed feedback laser. Instead of permanently etchin…
View article: Ultra-Short Lifetime of Intersubband Electrons in Resonance to GaN-Based LO-Phonons at 92 meV
Ultra-Short Lifetime of Intersubband Electrons in Resonance to GaN-Based LO-Phonons at 92 meV Open
In this study, we report on the ultra-short lifetime of excited intersubband electrons in a 38 Å wide AlGaN/GaN-based quantum well. The rapid decay of these charge carriers occurs due to a resonance between the relevant intersubband transi…
View article: Proposal for Deep-UV Emission from a Near-Infrared AlN/GaN-Based Quantum Cascade Device Using Multiple Photon Up-Conversion
Proposal for Deep-UV Emission from a Near-Infrared AlN/GaN-Based Quantum Cascade Device Using Multiple Photon Up-Conversion Open
We propose the use of an n-doped periodic AlN/GaN quantum cascade structure for the optical up-conversion of multiple near-infrared (near-IR) photons into deep-ultraviolet (deep-UV) radiation. Without applying an external bias voltage, the…
View article: AlGaN-Based 1.55 µm Phototransistor as a Crucial Building Block for Optical Computers
AlGaN-Based 1.55 µm Phototransistor as a Crucial Building Block for Optical Computers Open
An optically activated, enhancement mode heterostructure field effect transistor is proposed and analytically studied. A particular feature of this device is its gate region, which is made of a photovoltaic GaN/AlN-based superlattice detec…