D. Radziewicz
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View article: Photo-Scanning Capacitance Microscopy and Spectroscopy Study of Epitaxial GaAsN Layers and GaAsN P-I-N Solar Cell Structures
Photo-Scanning Capacitance Microscopy and Spectroscopy Study of Epitaxial GaAsN Layers and GaAsN P-I-N Solar Cell Structures Open
This work presents a novel approach to investigating epitaxial GaAsN layers and GaAsN-based p-i-n solar cell structures using light-assisted scanning capacitance microscopy (SCM) and spectroscopy. Due to the technological challenges in gro…
View article: Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy
Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy Open
Transient spectroscopies are sensitive to charge carriers released from trapping centres in semiconducting devices. Even though these spectroscopies are mostly applied to reveal defects causing states that are localised in the energy gap, …
View article: Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE
Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE Open
This work presents an investigation of the fully strained GaAsN/GaAs heterostructures obtained by atmospheric pressure metalorganic vapor phase epitaxy, focusing on the analysis of the strain generated in the GaAsN epilayers and its correl…
View article: Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell
Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell Open
Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport me…
View article: Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties
Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties Open
This work presents the epitaxial growth and material properties of InGaAsN epilayers obtained by atmospheric pressure metal organic vapour phase epitaxy. The main goal was to obtain InGaAsN quaternary alloys lattice-matched to GaAs in orde…
View article: Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE
Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE Open
Conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic va…
View article: Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates
Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates Open
The main goal of the studies on epitaxial regrowth process of InP on patterned substrates is to gain knowledge about growth rates and interface quality on various areas to improve the fabrication technology for future applications. Prepare…
View article: Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications
Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications Open
Optica Applicata, Vol. 46, 2016, nr 2, s. 241-248
View article: LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications
LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications Open
The work presents doping characteristics and properties of high Si−doped InGaAs epilayers lattice−matched to InP grown by low pressure metal−organic vapour phase epitaxy. Silane and disilane were used as dopant sources. The main task of in…