D. S. Katzer
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View article: Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy
Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy Open
High ScN fraction ScxAl1−xN has promise in important application areas including wide bandwidth RF resonators and filters, and ferroelectric devices such as non-volatile memory, but demands high crystal quality. In this work, the role of t…
View article: Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures
Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures Open
Heterogeneous integration of functional oxides with ultra-wide bandgap (UWBG) semiconductors is desired for the realization of novel hybrid systems applicable to a wide array of commercial electronics and defense applications. In this work…
View article: Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy
Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy Open
We report a method to obtain insight into lower thermal conductivity of β-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical predictions to…
View article: Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures
Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures Open
Epitaxial integration of perovskite oxide materials with GaN has unlocked the potential to improve functionality and performance in high-power RF and power-switching applications. In this work, we demonstrate structural and electrical prop…
View article: Crystalline Phase Control in Sc<sub>x</sub>Al<sub>x-1</sub>N Grown by Molecular Beam Epitaxy
Crystalline Phase Control in Sc<sub>x</sub>Al<sub>x-1</sub>N Grown by Molecular Beam Epitaxy Open
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View article: Band alignment of ScxAl1-xN/GaN heterojunctions
Band alignment of ScxAl1-xN/GaN heterojunctions Open
ScAlN is an emergent ultrawide-band-gap\nmaterial with both a high\npiezoresponse and demonstrated ferroelectric polarization switching.\nRecent demonstration of epitaxial growth of ScAlN on GaN has unlocked\nprospects for new high-power t…
View article: Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic Ta<sub>2</sub>N Thin Films
Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic Ta<sub>2</sub>N Thin Films Open
Epitaxial transition metal nitrides (TMNs) are an emerging class of crystalline thin film metals that can be heteroepitaxially integrated with common group III-nitride semiconductors such as GaN and AlN. Within a binary family of TMN compo…
View article: An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity
An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity Open
Simultaneous occurrence of superconductivity and quantum Hall effect is found in an epitaxial heterostructure of GaN and NbN.
View article: The Atomic Structure of Epitaxial Metallic Transition Metal Nitride TaN<sub>x</sub> by STEM-ABF and HAADF
The Atomic Structure of Epitaxial Metallic Transition Metal Nitride TaN<sub>x</sub> by STEM-ABF and HAADF Open
An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
View article: Second Harmonic Generation from Phononic Epsilon-Near-Zero Berreman Modes in Ultrathin Polar Crystal Films
Second Harmonic Generation from Phononic Epsilon-Near-Zero Berreman Modes in Ultrathin Polar Crystal Films Open
Immense optical field enhancement was predicted to occur for the Berreman mode in ultrathin films at frequencies in the vicinity of epsilon-near-zero (ENZ). Here, we report the first experimental proof of this prediction in the mid-infrare…
View article: Controlling the Infrared Dielectric Function through Atomic-Scale Heterostructures
Controlling the Infrared Dielectric Function through Atomic-Scale Heterostructures Open
Surface phonon polaritons (SPhPs) - the surface-bound electromagnetic modes of a polar material resulting from the coupling of light with optic phonons - offer immense technological opportunities for nanophotonics in the infrared (IR) spec…
View article: Controlling the Infrared Dielectric Function through\nAtomic-Scale Heterostructures
Controlling the Infrared Dielectric Function through\nAtomic-Scale Heterostructures Open
Surface\nphonon polaritons (SPhPs), the surface-bound electromagnetic\nmodes of a polar material resulting from the coupling of light with\noptic phonons, offer immense technological opportunities for nanophotonics\nin the infrared (IR) sp…
View article: Resonant Field Enhancement of Epsilon Near Zero Berreman Modes in an Ultrathin AlN Film
Resonant Field Enhancement of Epsilon Near Zero Berreman Modes in an Ultrathin AlN Film Open
Enormous optical field enhancement was predicted to occur for the Berreman mode in ultrathin films in the vicinity of epsilon near zero (ENZ). Here, we report the first experimental proof of this prediction in the mid-infrared by probing t…
View article: Strong Coupling of Epsilon-Near-Zero Phonon Polaritons in Polar Dielectric Heterostructures
Strong Coupling of Epsilon-Near-Zero Phonon Polaritons in Polar Dielectric Heterostructures Open
We report the first observation of epsilon-near-zero (ENZ) phonon polaritons in an ultrathin AlN film fully hybridized with surface phonon polaritons (SPhP) supported by the adjacent SiC substrate. Employing a strong coupling model for the…
View article: Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors Open
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) chann…
View article: Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy
Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy Open
The sensitivity of the surface morphology and microstructure of N-polar-oriented InAlN to variations in composition, temperature, and layer thickness for thin films grown by plasma-assisted molecular beam epitaxy (PAMBE) has been investiga…