Daniel Bedau
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Volume Contraction Upon Resistive Switching in Cr‐Doped V <sub>2</sub> O <sub>3</sub> as a Key Mechanism for Mottronics Applications Open
The rise of the electronic age sparked a quest for increasingly faster and smaller switches, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candida…
Origin of the inhomogeneous nanoscale resistivity in chromium doped V2O3 Open
Chromium doped V 2 O 3 polycrystalline thin films typically consist of conductive grains separated by insulating grain boundaries. We investigate the origin of the spatially inhomogeneous resistivity in these films and find no qualitative …
A Method for Fabricating CMOS Back-End-of-Line-Compatible Solid-State Nanopore Devices Open
Solid-state nanopores, nm-sized holes in thin, freestanding membranes, are powerful single-molecule sensors capable of interrogating a wide range of target analytes, from small molecules to large polymers. Interestingly, due to their high …
Electronic vs. phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition Open
Understanding the thermal conductivity of chromium doped V2O3 is crucial for optimizing the design of selectors for memory and neuromorphic devices. We utilized the time-domain thermoreflectance technique to measure the thermal conductivit…
View article: Magnetization dynamics driven by displacement currents across a magnetic tunnel junction
Magnetization dynamics driven by displacement currents across a magnetic tunnel junction Open
Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of a frequency-dep…
View article: Synaptogen: A Cross-Domain Generative Device Model for Large-Scale Neuromorphic Circuit Design
Synaptogen: A Cross-Domain Generative Device Model for Large-Scale Neuromorphic Circuit Design Open
We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. By training on extensive measurement data of an integrated 1T1R array (6000 cycles of 512 devic…
Bulk‐Like Mott‐Transition in Ultrathin Cr‐Doped V<sub>2</sub>O<sub>3</sub> Films and the Influence of its Variability on Scaled Devices Open
The pressure‐driven Mott‐transition in Chromium doped V 2 O 3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5%, and 15%. A change in resist…
Bulk-like Mott-Transition in ultrathin Cr-doped V2O3 films and the influence of its variability on scaled devices Open
The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5% and 15%. A change in resistivit…
A Compact Delay Model for OTS Devices Open
This paper presents a novel compact delay model of Ovonic Threshold Switch (OTS) devices that works efficiently for circuit simulations. The internal state variable of the two terminal devices is estimated using a delay system that uses a …
Supplementary data for: K-edge XANES characterization of ultra-thin (V₁₋ₓCrx)₂O₃ films and binary vanadium oxide compounds Open
This contains X-ray absorption and diffraction data collected at the Swiss Light Source for various vanadium/chromium oxide samples. Supplement to our paper titled: "K-edge XANES characterization of ultra-thin (V1-xCrx)2O3 films and binary…
Supplementary data for: K-edge XANES characterization of ultra-thin (V₁₋ₓCrx)₂O₃ films and binary vanadium oxide compounds Open
This contains X-ray absorption and diffraction data collected at the Swiss Light Source for various vanadium/chromium oxide samples. Supplement to our paper titled: "K-edge XANES characterization of ultra-thin (V1-xCrx)2O3 films and binary…
Physical Origin of Threshold Switching in Amorphous Chromium‐Doped V<sub>2</sub>O<sub>3</sub> Open
Devices made of amorphous thin films of the prototypical Mott‐insulator chromium‐doped V 2 O 3 show a threshold and negative differential resistance effect after an electroforming step. Here, it is demonstrated that this effect is caused b…
A Compact Model of Threshold Switching Devices for Efficient Circuit Simulations Open
In this paper, we present a new compact model of threshold switching devices which is suitable for efficient circuit-level simulations. First, a macro model, based on a compact transistor based circuit, was implemented in LTSPICE. Then, a …
Fabrication of Highly Resistive NiO Thin Films for Nanoelectronic Applications Open
Thin films of the prototypical charge transfer insulator nickel oxide appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging, however, and mostly a p‐type semiconducting phase is …
A high throughput generative vector autoregression model for stochastic synapses Open
By imitating the synaptic connectivity and plasticity of the brain, emerging electronic nanodevices offer new opportunities as the building blocks of neuromorphic systems. One challenge for large-scale simulations of computational architec…
Fabrication of highly resistive NiO thin films for nanoelectronic applications Open
Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. …
Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance Open
Resistive switching devices and other components with negative differential resistance (NDR) are emerging as possible electronic constituents of next-generation computing architectures. Due to the exhibited NDR effects, switching operation…
Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance Open
Resistive switching devices and other components with negative differential resistance (NDR) are emerging as possible electronic constituents of next-generation computing architectures. Due to the NDR effects exhibited, switching operation…
Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics Open
Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are p…
Current-limiting amplifier for high speed measurement of resistive switching data Open
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to the control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…
Template-Assisted Direct Growth of 1 Td/in<sup>2</sup> Bit Patterned Media Open
We present a method for growing bit patterned magnetic recording media using directed growth of sputtered granular perpendicular magnetic recording media. The grain nucleation is templated using an epitaxial seed layer, which contains Pt p…