Daniel Grogg
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View article: A 6.7 MHz nanoelectromechanical ring oscillator using curved cantilever switches coated with amorphous carbon
A 6.7 MHz nanoelectromechanical ring oscillator using curved cantilever switches coated with amorphous carbon Open
Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using…
View article: Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches
Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches Open
Nowadays, electronics face a challenge regarding the power consumption of integrated circuits (ICs). There is a need for new devices that can provide improved switching capabilities. The downscaled electrostatically actuated ohmic switch, …
View article: Energy and Latency Optimization in NEM Relay-Based Digital Circuits
Energy and Latency Optimization in NEM Relay-Based Digital Circuits Open
Digital circuits based on nanoelectromechanical (NEM) relays hold out the potential of providing an energy efficiency unachievable by conventional CMOS technology. This paper presents a detailed analysis of the operating characteristics of…
View article: Amorphous carbon active contact layer for reliable nanoelectromechanical switches
Amorphous carbon active contact layer for reliable nanoelectromechanical switches Open
This paper reports an amorphous carbon (a-C) contact coating for ultra-low-ower curved nanoelectromechanical (NEM) switches. a-C addresses important problems in miniaturization and low-ower operation of mechanical relays: i) the surface en…
View article: Fundamental scaling properties of electro-mechanical switches
Fundamental scaling properties of electro-mechanical switches Open
We discuss the fundamental processes including electron conduction and adhesion of metallic contacts pertaining to the scaling of the performance metrics of nano-electro-mechanical switches. In particular, we show that under most circumsta…
View article: Wafer-level heterogeneous 3D integration for MEMS and NEMS
Wafer-level heterogeneous 3D integration for MEMS and NEMS Open
In this paper the state-of-the-art in wafer-level heterogeneous 3D integration technologies for micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS) is reviewed. Various examples of commercial and experimental h…
View article: Nanomechanical Silicon Resonators with Intrinsic Tunable Gain and Sub-nW Power Consumption
Nanomechanical Silicon Resonators with Intrinsic Tunable Gain and Sub-nW Power Consumption Open
Nanoelectromechanical systems (NEMS) as integrated components for ultrasensitive sensing, time keeping, or radio frequency applications have driven the search for scalable nanomechanical transduction on-chip. Here, we present a hybrid sili…
View article: The Vibrating Body Transistor
The Vibrating Body Transistor Open
This paper presents a hybrid resonator architecture called the vibrating body field-effect transistor (VB-FET), which combines a silicon microelectromechanical (MEM) resonator and a FET in a single device. The active device provides improv…
View article: Resonant-body Fin-FETs with sub-nW power consumption
Resonant-body Fin-FETs with sub-nW power consumption Open
This paper presents, for the first time, experimental evidence on resonant-body Fin-FETs (RB-FinFET) with two independent lateral gates, operated from weak to strong inversion, which enables unique trade-off between power consumption and g…
View article: Nano-Electro-Mechanical vibrating body FET resonator for high frequency integrated oscillators
Nano-Electro-Mechanical vibrating body FET resonator for high frequency integrated oscillators Open
Mechanical resonators are attractive for many applications in signal processing and sensing applications [1]. However, the aggressive scaling of their dimensions into the nanometer range with a simultaneous increase of the resonance freque…
View article: Tunable Electromechanical resonator based on Carbon Nanotube Array Suspended Gate Field Effect Transistor (CNT-SGFET)
Tunable Electromechanical resonator based on Carbon Nanotube Array Suspended Gate Field Effect Transistor (CNT-SGFET) Open
In this paper we report the first experimental demonstration of Micro-Electro-Mechanical resonator based on a Carbon Nanotube-Array-Suspended-Gate-Field-Effect-Transistor (CNT-SGFET). A dense array of single-walled CNT aligned by ac-dielec…
View article: Active Microelectromechanical Resonator : The Vibrating Body Field Effect Transistor
Active Microelectromechanical Resonator : The Vibrating Body Field Effect Transistor Open
The progress in the technology of microelectronic devices has led to a strong miniaturization and high performance for circuits and systems, enabling modern applications such as mobile computing and communications. Today, remaining "off-ch…
View article: Self-sustained low power oscillator based on vibrating body field effect transistor
Self-sustained low power oscillator based on vibrating body field effect transistor Open
The operation of a vibrating body field effect transistor (VB-FET) near pull-in is exploited to experimentally demonstrate a self-oscillating device. The positive feedback mechanism is triggered at the onset of inversion in a depleted VB-F…
View article: Small signal modeling of charge and piezoresistive modulations in active MEM resonators
Small signal modeling of charge and piezoresistive modulations in active MEM resonators Open
In this work we establish novel analytical and small signal circuit modeling of two major effects that co-exist in active Micro-Electro-Mechanical resonators: charge and piezoresistance modulations. Analytical expressions for the output cu…
View article: 9 MHz Vibrating Body FET tuning fork oscillator
9 MHz Vibrating Body FET tuning fork oscillator Open
A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The tuning fork VB-FET used in this work provides a high quality factor of 9400 in the open-loop configuratio…
View article: Sub-100µW low power operation of Vibrating Body FETs
Sub-100µW low power operation of Vibrating Body FETs Open
This paper reports the low power operation of Vibrating Body Field Effect Transistors as active resonators for communication applications. For the first time we report active resonators operating at 2MHz and 20MHz with power consumption le…
View article: Bulk Lateral MEM Resonator on Thin SOI With High $Q$ -Factor
Bulk Lateral MEM Resonator on Thin SOI With High $Q$ -Factor Open
The fabrication, design, and characterization of high-quality factor microelectromechartical (MEM) resonators fabricated on thin-film silicon-on-insulators (SOIs) are addressed in this paper. In particular, we investigate laterally vibrati…
View article: High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor
High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor Open
In this paper, an oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) working at 9.4MHz is presented. The electrical characteristics of this active MEM resonator are detailed for static and dynamic operation. The benefit …
View article: Multi-gate vibrating-body field effect transistor (VB-FETs)
Multi-gate vibrating-body field effect transistor (VB-FETs) Open
This paper reports on the design, fabrication and detailed characteristics of multi-gate vibrating-body field effect transistors (VB-FETs). Double-gate and four-gate VB-FETs with resonance frequencies of 2 MHz and 71 MHz, respectively, are…
View article: Laterally vibrating-body double gate MOSFET with improved signal detection
Laterally vibrating-body double gate MOSFET with improved signal detection Open
Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon fil…
View article: 0-level Vacuum Packaging RT Process for MEMS Resonators
0-level Vacuum Packaging RT Process for MEMS Resonators Open
A new Room Temperature (RT) 0-level vacuum package is demonstrated in this work, using amorphous silicon (aSi) as sacrificial layer and SiO2 as structural layer. The process is compatible with most of MEMS resonators and Resonant Suspended…
View article: Fabrication of MEMS Resonators in Thin SOI
Fabrication of MEMS Resonators in Thin SOI Open
A simple and fast process for micro-electromechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented in this paper. Thin SOI wafers are important for advanced CMOS technology and thus are evaluated as reso…
View article: Nano-gap high quality factor thin film SOI MEM resonators
Nano-gap high quality factor thin film SOI MEM resonators Open
A 1.25 m thin SOI micro-electro-mechanical (MEM) resonator with a quality factor of 100â000 at 24.6 MHz is demonstrated. A nanogap fabrication process allows the fabrication of < 200 nm gaps, allowing for low polarization voltages. A mot…
View article: Double gate movable body Micro-Electro-Mechanical FET as hysteretic switch: Application to data transmission systems
Double gate movable body Micro-Electro-Mechanical FET as hysteretic switch: Application to data transmission systems Open
This paper reports on the fabrication, experimental characterization and data transmission application of a double-gate movable body FET. As its name suggests, the proposed movable-body Micro-Electro-Mechanical FET (MB-MEMFET) is a hybrid …