Daniel Rosenbach
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View article: Breakdown of the quantum anomalous Hall effect under microwave drives
Breakdown of the quantum anomalous Hall effect under microwave drives Open
Quantum anomalous Hall (QAH) insulators exhibit chiral dissipationless edge states without an external magnetic field, making them a promising material for quantum metrology and microwave applications. However, the breakdown of the zero-re…
View article: Propagation, dissipation and breakdown in quantum anomalous Hall edge states probed by microwave edge plasmons
Propagation, dissipation and breakdown in quantum anomalous Hall edge states probed by microwave edge plasmons Open
The quantum anomalous Hall (QAH) effect, with its single chiral, topologically protected edge state, offers a platform for flying Majorana states as well as non-reciprocal microwave devices. While recent research showed the non-reciprocity…
View article: Universal conductance fluctuations in a Bi<sub>1.5</sub>Sb<sub>0.5</sub>Te<sub>1.8</sub>Se<sub>1.2</sub> topological insulator nano-scaled Hall bar structure
Universal conductance fluctuations in a Bi<sub>1.5</sub>Sb<sub>0.5</sub>Te<sub>1.8</sub>Se<sub>1.2</sub> topological insulator nano-scaled Hall bar structure Open
We present low-temperature magnetotransport measurements characterizing the promising quaternary Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 topological insulator material. The measurements performed on a nano-Hall bar grown by selective-area molecular be…
View article: Supercurrent in Bi4Te3 Topological Material-Based Three-Terminal Junctions
Supercurrent in Bi4Te3 Topological Material-Based Three-Terminal Junctions Open
In this paper, in an in situ prepared three-terminal Josephson junction based on the topological insulator Bi4Te3 and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias cu…
View article: Ballistic surface channels in fully in situ defined Bi$_4$Te$_3$ Josephson junctions with aluminum contacts
Ballistic surface channels in fully in situ defined Bi$_4$Te$_3$ Josephson junctions with aluminum contacts Open
In this letter we report on the electrical transport properties of Bi$_4$Te$_3$ in a Josephson junction geometry using superconducting Al electrodes with a Ti interdiffusion barrier. Bi$_4$Te$_3$ is proposed to be a dual topological insula…
View article: Supercurrent in Bi$_4$Te$_3$ Topological Material-Based Three-Terminal Junctions
Supercurrent in Bi$_4$Te$_3$ Topological Material-Based Three-Terminal Junctions Open
In an in-situ prepared three-terminal Josephson junction based on the topological insulator Bi$_4$Te$_3$ and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents re…
View article: Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi$_2$Te$_3$ nanoribbons
Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi$_2$Te$_3$ nanoribbons Open
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently alo…
View article: Report on 2104.03373v2
Report on 2104.03373v2 Open
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator.In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently alon…
View article: In-plane magnetic field-driven symmetry breaking in topological insulator-based three-terminal junctions
In-plane magnetic field-driven symmetry breaking in topological insulator-based three-terminal junctions Open
Topological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block …
View article: Report on 2104.03373v2
Report on 2104.03373v2 Open
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator.In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently alon…
View article: Report on scipost_202108_00005v1
Report on scipost_202108_00005v1 Open
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator.In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently alon…
View article: Report on scipost_202108_00005v1
Report on scipost_202108_00005v1 Open
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator.In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently alon…
View article: Reappearance of first Shapiro step in narrow topological Josephson junctions
Reappearance of first Shapiro step in narrow topological Josephson junctions Open
Confinement in topological insulator nanoribbon Josephson junctions leads to a gapped electron-hole bound state spectrum.
View article: Erratum: Magnetotransport signatures of three-dimensional topological insulator nanostructures [Phys. Rev. B <b>97</b>, 245429 (2018)]
Erratum: Magnetotransport signatures of three-dimensional topological insulator nanostructures [Phys. Rev. B <b>97</b>, 245429 (2018)] Open
Received 8 February 2021DOI:https://doi.org/10.1103/PhysRevB.103.079902©2021 American Physical SocietyPhysics Subject Headings (PhySH)Research AreasBallistic transportMagnetotransportPhysical SystemsNanostructuresNanowiresTopological insul…
View article: Quantum transport and induced superconductivity in selectively deposited topological insulator devices
Quantum transport and induced superconductivity in selectively deposited topological insulator devices Open
Concepts for quantum computation technologies are based on the isolation of a quantum system that has two distinct quantum mechanical states. Famous examples like superconducting charge qubits, electronic spin qubits and nuclear spin qubit…
View article: In-plane magnetic field-driven symmetry breaking in topological\n insulator-based three-terminal junctions
In-plane magnetic field-driven symmetry breaking in topological\n insulator-based three-terminal junctions Open
Topological surface states of three-dimensional topological insulator\nnanoribbons and their distinct magnetoconductance properties are promising for\ntopoelectronic applications and topological quantum computation. A crucial\nbuilding blo…
View article: Proximity‐Effect‐Induced Superconductivity in Nb/Sb<sub>2</sub>Te<sub>3</sub>‐Nanoribbon/Nb Junctions
Proximity‐Effect‐Induced Superconductivity in Nb/Sb<sub>2</sub>Te<sub>3</sub>‐Nanoribbon/Nb Junctions Open
Nanohybrid superconducting junctions using antimony telluride (Sb 2 Te 3 ) topological insulator nanoribbons and Nb superconducting electrodes are fabricated using electron beam lithography and magnetron sputtering. The effects of bias cur…
View article: Phase-coherent loops in selectively-grown topological insulator nanoribbons
Phase-coherent loops in selectively-grown topological insulator nanoribbons Open
We succeeded in the fabrication of topological insulator (Bi 0.57 Sb 0.43 ) 2 Te 3 Hall bars as well as nanoribbons by means of selective-area growth using molecular beam epitaxy. By performing magnetotransport measurements at low temperat…
View article: Phase-coherent loops in selectively-grown topological insulator nanoribbons
Phase-coherent loops in selectively-grown topological insulator nanoribbons Open
Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused by electron interference. Experimental evidence is presented that the conductance …
View article: In situ disentangling surface state transport channels of a topological insulator thin film by gating
In situ disentangling surface state transport channels of a topological insulator thin film by gating Open
In the thin film limit, the surface state of a three-dimensional topological insulator gives rise to two parallel conduction channels at the top and bottom surface of the film, which are difficult to disentangle in transport experiments. H…
View article: Boosting Transparency in Topological Josephson Junctions via Stencil\n Lithography
Boosting Transparency in Topological Josephson Junctions via Stencil\n Lithography Open
Hybrid devices comprised of topological insulator (TI) nanostructures in\nproximity to s-wave superconductors (SC) are expected to pave the way towards\ntopological quantum computation. Fabrication under ultra-high vacuum conditions\nis ne…
View article: Boosting Transparency in Topological Josephson Junctions via Stencil Lithography
Boosting Transparency in Topological Josephson Junctions via Stencil Lithography Open
Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is neces…
View article: Electrical resistance of individual defects at a topological insulator surface
Electrical resistance of individual defects at a topological insulator surface Open
Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and all…
View article: Nanowire Networks: Electronic Properties of Complex Self‐Assembled InAs Nanowire Networks (Adv. Electron. Mater. 6/2016)
Nanowire Networks: Electronic Properties of Complex Self‐Assembled InAs Nanowire Networks (Adv. Electron. Mater. 6/2016) Open
The front cover illustration highlights an array of V-shaped grooves etched into a silicon (100) substrate, as described by Heedt et al. in article number 1500460. Crystallographic {111} facets are formed and indium arsenide nanowires grow…