Daniel Splith
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View article: Influence of Cation Ratio and Oxygen Deposition Pressure on Optical and Electrical Transport Properties of Amorphous Copper Tin Oxide Thin Films
Influence of Cation Ratio and Oxygen Deposition Pressure on Optical and Electrical Transport Properties of Amorphous Copper Tin Oxide Thin Films Open
Amorphous copper tin oxide thin films are fabricated in oxygen atmosphere and at room temperature using combinatorial pulsed laser deposition approaches. Resulting thin films show n‐type behavior for Cu/(Cu + Sn) < 0.5. For Cu/(Cu + Sn) > …
View article: Ultrawide bandgap spinel <i>γ</i>-(Ga0.8Ge0.2)2O3 alloy semiconductor epitaxial thin films
Ultrawide bandgap spinel <i>γ</i>-(Ga0.8Ge0.2)2O3 alloy semiconductor epitaxial thin films Open
Epitaxial growth of phase-pure and high-quality spinel γ-Ga2O3-based semiconductor thin films has been a big challenge for fundamental research on metastable defective inverse spinel γ-Ga2O3 semiconductors in view of potential device appli…
View article: Heteroepitaxial Cubic (111) Zn <sub>2</sub> GeO <sub>4</sub> Ultrawide Bandgap Semiconductor Thin Films Grown on Cubic (111) MgAl <sub>2</sub> O <sub>4</sub> Substrates by Pulsed Laser Deposition
Heteroepitaxial Cubic (111) Zn <sub>2</sub> GeO <sub>4</sub> Ultrawide Bandgap Semiconductor Thin Films Grown on Cubic (111) MgAl <sub>2</sub> O <sub>4</sub> Substrates by Pulsed Laser Deposition Open
This study presents a comprehensive analysis of the microstructural, optical, and electrical transport properties of heteroepitaxial cubic spinel (111)‐oriented Zn 2 GeO 4 thin films grown on cubic spinel (111) MgAl 2 O 4 substrates by pul…
View article: Low-temperature buffer layer-assisted heteroepitaxial growth of γ-CuI thin films by pulsed laser deposition: Tailoring electrical properties
Low-temperature buffer layer-assisted heteroepitaxial growth of γ-CuI thin films by pulsed laser deposition: Tailoring electrical properties Open
As the first discovered p-type transparent conductive material, copper(I) iodide (CuI) is considered the most competitive p-type candidate in the field of transparent electronics. Herein, we introduced a low-temperature buffer-layer-assist…
View article: Deconvolution of light- and heavy-hole contributions to measurements of the temperature-dependent Hall effect in zincblende copper iodide
Deconvolution of light- and heavy-hole contributions to measurements of the temperature-dependent Hall effect in zincblende copper iodide Open
This study presents a detailed experimental investigation of conductivity and Hall effect measurements in copper iodide (CuI), which is complemented by density-functional theory and Boltzmann-transport calculations. We have evaluated the t…
View article: Ni‐Alloyed Copper Iodide Thin Films: Microstructural Features and Functional Performance
Ni‐Alloyed Copper Iodide Thin Films: Microstructural Features and Functional Performance Open
To tailor electrical properties of often degenerate pristine CuI, Ni is introduced as alloy constituent. Cosputtering in a reactive, but also in an inert atmosphere as well as pulsed laser deposition (PLD), is used to grow thin films. The …
View article: Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices
Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices Open
Metal‐semiconductor field‐effect transistor (MESFET) devices based on pulsed laser deposition (PLD) grown In 2 O 3 thin films with on–off ratios exceeding 6 orders of magnitude and low sub‐threshold swing values close to the thermodynamic …
View article: Properties of Schottky barrier diodes on heteroeptixial <i>α</i>-<i>Ga</i>2O3 thin films
Properties of Schottky barrier diodes on heteroeptixial <i>α</i>-<i>Ga</i>2O3 thin films Open
Schottky barrier diodes on α−Ga2O3:Sn heteroepitaxial thin films grown by pulsed laser deposition on m-plane sapphire substrates are reported. Sets of co-planar diodes were fabricated with different metals and different deposition methods.…
View article: Growth of κ-([Al,In]<sub><i>x</i></sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> Quantum Wells and Their Potential for Quantum-Well Infrared Photodetectors
Growth of κ-([Al,In]<sub><i>x</i></sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> Quantum Wells and Their Potential for Quantum-Well Infrared Photodetectors Open
The wide band gap semiconductor κ-Ga2O3 and its aluminum and indium alloys have been proposed as promising materials for many applications. One of them is the use of inter-sub-band transitions in quantum-well (QW) systems for infrared dete…
View article: Masked-assisted radial-segmented target pulsed-laser deposition: A novel method for area-selective deposition using pulsed-laser deposition
Masked-assisted radial-segmented target pulsed-laser deposition: A novel method for area-selective deposition using pulsed-laser deposition Open
We introduce a novel technique, masked-assisted radial-segmented target pulsed-laser deposition (MARS-PLD) for unprecedented capabilities in area-selective physical vapor deposition. The MARS-PLD setup consists of a conventional PLD chambe…
View article: Realization of Conductive n‐Type Doped <i>α</i>‐Ga<sub>2</sub>O<sub>3</sub> on <i>m</i>‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process
Realization of Conductive n‐Type Doped <i>α</i>‐Ga<sub>2</sub>O<sub>3</sub> on <i>m</i>‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process Open
Structural and electrical properties of undoped and doped α ‐Ga 2 O 3 thin films grown by pulsed laser deposition on m ‐plane sapphire in a two‐step process are presented. A buffer layer of undoped α ‐Ga 2 O 3 is introduced below the elect…
View article: Strain states and relaxation for $$\alpha$$-(Al$$_x$$Ga$$_{1-x}$$)$$_2$$O$$_3$$ thin films on prismatic planes of $$\alpha$$-Al$$_2$$O$$_3$$ in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt
Strain states and relaxation for $$\alpha$$-(Al$$_x$$Ga$$_{1-x}$$)$$_2$$O$$_3$$ thin films on prismatic planes of $$\alpha$$-Al$$_2$$O$$_3$$ in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt Open
Pseudomorphic and relaxed $$\alpha$$ -(Al $$_x$$ Ga $$_{1-x}$$ ) $$_2$$ O $$_3$$ thin films are grown by combinatorial pulsed laser deposition in the entire composition range on prismatic a- and m-plane $$\alpha$$ -Al $$…
View article: Realization of highly rectifying Schottky barrier diodes and <i>pn</i> heterojunctions on <i>κ</i>-Ga2O3 by overcoming the conductivity anisotropy
Realization of highly rectifying Schottky barrier diodes and <i>pn</i> heterojunctions on <i>κ</i>-Ga2O3 by overcoming the conductivity anisotropy Open
Novel devices based on orthorhombic κ-Ga2O3 could enable solar blind infrared detection or high-electron mobility transistors with large two-dimensional electron gas densities. Here, we report on the current transport parallel to the growt…
View article: Correction to: Structural and Elastic Properties of α‐(Al<sub><i>x</i></sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Thin Films on (11.0) Al<sub>2</sub>O<sub>3</sub> Substrates for the Entire Composition Range
Correction to: Structural and Elastic Properties of α‐(Al<sub><i>x</i></sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Thin Films on (11.0) Al<sub>2</sub>O<sub>3</sub> Substrates for the Entire Composition Range Open
Due to a typo in our theoretical calculations of the pseudomorphic out-of-plane lattice constant a, the “theory pseudomorphic” curve (orange dashed line) in Figure 4b of the original article[1] was unfortunately plotted incorrectly. We cor…
View article: Structural and Elastic Properties of α‐(Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>)<sub>2</sub>O<sub>3</sub> Thin Films on (11.0) Al<sub>2</sub>O<sub>3</sub> Substrates for the Entire Composition Range
Structural and Elastic Properties of α‐(Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>)<sub>2</sub>O<sub>3</sub> Thin Films on (11.0) Al<sub>2</sub>O<sub>3</sub> Substrates for the Entire Composition Range Open
Structural properties of rhombohedral α‐(Al x Ga 1− x ) 2 O 3 thin films grown by two combinatorial pulsed laser deposition (PLD) techniques are investigated for the entire composition range. One α‐(Al x Ga 1− x ) 2 O 3 thin film is deposi…
View article: Epitaxial Growth of <i>κ</i>‐(Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>)<sub>2</sub>O<sub>3</sub> Layers and Superlattice Heterostructures up to <i>x</i> = 0.48 on Highly Conductive Al‐Doped ZnO Thin‐Film Templates by Pulsed Laser Deposition
Epitaxial Growth of <i>κ</i>‐(Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>)<sub>2</sub>O<sub>3</sub> Layers and Superlattice Heterostructures up to <i>x</i> = 0.48 on Highly Conductive Al‐Doped ZnO Thin‐Film Templates by Pulsed Laser Deposition Open
(Al x Ga 1− x ) 2 O 3 thin‐film layers in the metastable orthorhombic κ ‐modification are deposited heteroepitaxially on unintentionally doped ZnO buffer layers on heavily Al‐doped and highly conductive ZnO back contact layers by pulsed la…
View article: Control of phase formation of (Al<sub>x</sub>Ga<sub>1 − x</sub>)<sub>2</sub>O<sub>3</sub> thin films on c-plane Al<sub>2</sub>O<sub>3</sub>
Control of phase formation of (Al<sub>x</sub>Ga<sub>1 − x</sub>)<sub>2</sub>O<sub>3</sub> thin films on c-plane Al<sub>2</sub>O<sub>3</sub> Open
In this paper, the growth of orthorhombic and monoclinic (Al x Ga 1 − x ) 2 O 3 thin films on (00.1) Al 2 O 3 by tin-assisted pulsed laser deposition is investigated as a function of oxygen pressure p (O 2 ) and substrate temperature …
View article: Growth, structural and optical properties of coherent <i>κ</i>-(Al<i>x</i>Ga1−<i>x</i>)2O3/<i>κ</i>-Ga2O3 quantum well superlattice heterostructures
Growth, structural and optical properties of coherent <i>κ</i>-(Al<i>x</i>Ga1−<i>x</i>)2O3/<i>κ</i>-Ga2O3 quantum well superlattice heterostructures Open
High quality heteroepitaxial (001)-oriented κ-(AlxGa1−x)2O3/κ-Ga2O3 quantum well superlattice heterostructures were deposited by tin-assisted pulsed laser deposition on c-sapphire substrates. Sharp superlattice fringes up to the ninth orde…
View article: Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition
Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition Open
We report the controlled formation of organic/inorganic Schottky diodes by depositing poly(3,4-ethylenedioxythiophene) (PEDOT) on n-doped ZnO layers using oxidative chemical vapor deposition (oCVD). Current-voltage measurements reveal the …
View article: Solubility limit and material properties of a κ-(Al<i>x</i>Ga1−x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD
Solubility limit and material properties of a κ-(Al<i>x</i>Ga1−x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD Open
A ternary, orthorhombic κ-(AlxGa1−x)2O3 thin film was synthesized by combinatorial pulsed laser deposition on a 2 in. in diameter c-sapphire substrate with a composition gradient. Structural, morphological, and optical properties were stud…
View article: A Review of the Segmented‐Target Approach to Combinatorial Material Synthesis by Pulsed‐Laser Deposition
A Review of the Segmented‐Target Approach to Combinatorial Material Synthesis by Pulsed‐Laser Deposition Open
Combinatorial material synthesis has led to a significant acceleration in the optimization of multinary compounds and a more efficient usage of source and substrate materials. Various growth methods, including physical vapor deposition, ca…
View article: Epitaxial <i>κ</i>-(Al<i>x</i>Ga1−<i>x</i>)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD
Epitaxial <i>κ</i>-(Al<i>x</i>Ga1−<i>x</i>)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD Open
The structural, surface, and optical properties of phase-pure κ-(AlxGa1−x)2O3 thin films on c-sapphire and STO(111):Nb substrates as well as on MgO(111) and κ-Ga2O3 templates are reported as a function of alloy composition for x < 0.4. …
View article: Epitaxial stabilization of single phase <i>κ</i>-(In<i>x</i>Ga1−<i>x</i>)2O3 thin films up to <i>x</i> = 0.28 on c-sapphire and <i>κ</i>-Ga2O3(001) templates by tin-assisted VCCS-PLD
Epitaxial stabilization of single phase <i>κ</i>-(In<i>x</i>Ga1−<i>x</i>)2O3 thin films up to <i>x</i> = 0.28 on c-sapphire and <i>κ</i>-Ga2O3(001) templates by tin-assisted VCCS-PLD Open
High-quality (InxGa1−x)2O3 thin films in the orthorhombic κ-phase were grown by pulsed-laser deposition (PLD) on c-sapphire substrates as well as PLD-grown κ-Ga2O3 thin film templates. We varied the In-content 0 ≤ x ≤ 0.38 of the layers us…
View article: Erratum: “Structural, optical, and electrical properties of orthorhombic <b>κ</b>-(InxGa1−x)2O3 thin films” [APL Mater. 7, 022525 (2019)]
Erratum: “Structural, optical, and electrical properties of orthorhombic <b>κ</b>-(InxGa1−x)2O3 thin films” [APL Mater. 7, 022525 (2019)] Open
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View article: Structural, optical, and electrical properties of orthorhombic κ-(In<i>x</i>Ga1−<i>x</i>)2O3 thin films
Structural, optical, and electrical properties of orthorhombic κ-(In<i>x</i>Ga1−<i>x</i>)2O3 thin films Open
Material properties of orthorhombic κ-phase (InxGa1−x)2O3 thin films grown on a c-plane sapphire substrate by pulsed-laser deposition are reported for an indium content up to x ∼ 0.35. This extended range of miscibility enables band gap en…
View article: High-Quality Schottky Barrier Diodes on β-Gallium Oxide Thin Films on Glass Substrate
High-Quality Schottky Barrier Diodes on β-Gallium Oxide Thin Films on Glass Substrate Open
Structural, electrical and optical properties of monoclinic gallium oxide thin films, deposited by pulsed laser deposition on glass substrates, are reported. The influence of growth temperature on thin film properties was investigated. Fur…
View article: Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality
Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality Open
High-quality Ga2O3 thin films in the orthorhombic κ-phase are grown by pulsed-laser deposition using a tin containing target on c-sapphire, MgO(111), SrTiO3(111), and yttria-stabilized ZrO2(111) substrates. The structural quality of the la…