David J. Binks
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Effect of buffer layer thickness on recombination in zincblende InGaN/GaN quantum wells Open
InGaN/GaN quantum wells grown in the zincblende phase along the [001] direction are free of the internal electric fields that reduce the radiative recombination rate in conventional quantum wells grown along the c -axis in the wurtzite pha…
Electrically active defects in Ta-doped <i>β</i>-Ga2O3 grown using the optical floating zone method Open
Deep-level defects in Ta-doped β-Ga2O3 single crystals grown using the optical floating zone method are investigated. Deep-level transient spectroscopy (DLTS) in conjunction with Laplace-DLTS (L-DLTS) and photoluminescence (PL) has been ap…
View article: Colloidal quantum dots grown from singly-doped seed clusters: a spin-photon interface for quantum memories and quantum repeaters
Colloidal quantum dots grown from singly-doped seed clusters: a spin-photon interface for quantum memories and quantum repeaters Open
Singly doped colloidal quantum dots (CQDs) are promising spin-photon interfaces for quantum memories and quantum repeaters. Coupling between the dopant spin and the band edge CQD exciton substantially enhances the optical interaction cross…
Broadly tunable cubic phase InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition. Open
Conventional c-plane wurtzite InGaN/GaN quantum wells are subject to a large internal field that acts to separate electrons and holes and thereby lowers the rate of radiative recombination. This effect is exacerbated for higher indium cont…
View article: Enhanced spin lifetime in colloidal quantum dots by growth from singly Mn-doped molecular cluster seeds
Enhanced spin lifetime in colloidal quantum dots by growth from singly Mn-doped molecular cluster seeds Open
Seed clusters enable the growth of colloidal quantum dots singly doped with Mn.
Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: saturation of localisation sites versus Auger–Meitner recombination Open
Light emitting diodes based on c -plane (In,Ga)N/GaN quantum wells (QWs) can have >90% emission efficiency at modest current densities but this drops significantly at higher excitation, an effect known as efficiency droop that limits devic…
The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers Open
AlxGa1−xN epilayers are used as the basis of ultraviolet LEDs and detectors. The trap states produced by defects and impurities can play a key role in the device performance. In this work, conventional deep-level transient spectroscopy, ph…
Efficiency droop in zincblende InGaN/GaN quantum wells Open
Cubic zincblende InGaN/GaN quantum wells are free of the electric fields that reduce recombination efficiency in hexagonal wurtzite wells.
Singly doped colloidal quantum dots as optically addressed nanopositionable qubits Open
Colloidal quantum dots (CQDs) are isolated semiconductor nanocrystals with a size-tunable bandgap that can be prepared and processed by well-established solvent-based chemistry, and are currently used for a number of optoelectronic applica…
Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells Open
The internal quantum efficiency of (In,Ga)N/GaN quantum wells can surpass 90% for blue-emitting structures at moderate drive current densities but decreases significantly for longer emission wavelengths and at higher excitation rates. This…
View article: A Low‐Temperature Synthetic Route Toward a High‐Entropy 2D Hexernary Transition Metal Dichalcogenide for Hydrogen Evolution Electrocatalysis
A Low‐Temperature Synthetic Route Toward a High‐Entropy 2D Hexernary Transition Metal Dichalcogenide for Hydrogen Evolution Electrocatalysis Open
High‐entropy (HE) metal chalcogenides are a class of materials that have great potential in applications such as thermoelectrics and electrocatalysis. Layered 2D transition‐metal dichalcogenides (TMDCs) are a sub‐class of high entropy meta…
View article: High Color-Purity and Efficient Pure-Blue Perovskite Light-Emitting Diodes Based on Strongly Confined Monodispersed Quantum Dots
High Color-Purity and Efficient Pure-Blue Perovskite Light-Emitting Diodes Based on Strongly Confined Monodispersed Quantum Dots Open
Here, we develop an in situ photoluminescence (PL) system to monitor the nucleation and growth of perovskite nanocrystals and control the monomer supply rate to achieve strongly confined and monodispersed quantum dots (QDs) with average si…
Synthesis and characterisation of Ga- and In-doped CdS by solventless thermolysis of single source precursors Open
A low temperature and facile molecular precursor route towards phase-pure Ga- and In-doped CdS is reported. Photoluminescence spectroscopy showed that charge carrier recombination was reduced by doping the material, increasing exciton life…
Cubic GaN and InGaN/GaN quantum wells Open
LEDs based on hexagonal InGaN/GaN quantum wells are dominant technology for many lighting applications. However, their luminous efficacy for green and amber emission and at high drive currents remains limited. Growing quantum wells instead…
View article: Quantum Confined High-Entropy Lanthanide Oxysulfide Colloidal Nanocrystals
Quantum Confined High-Entropy Lanthanide Oxysulfide Colloidal Nanocrystals Open
We have synthesized the first reported example of quantum confined high-entropy (HE) nanoparticles, using the lanthanide oxysulfide, Ln2SO2, system as the host phase for an equimolar mixture of Pr, Nd, Gd, Dy, and Er. A uniform HE phase wa…
Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES) Open
HAXPES enables the detection of buried interfaces with an increased photo electron sampling depth.
Synthesis of High Entropy Lanthanide Oxysulfides via the Thermolysis of a Molecular Precursor Cocktail Open
High entropy (HE) materials have received significant attention in recent years, due to their intrinsically high levels of configurational entropy. While there has been significant work exploring HE alloys and oxides, new families of HE ma…
Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells Open
A series of single InGaN/GaN quantum wells (QWs) with a Si-doped InGaN underlayer were studied to investigate the impact of the underlayer on photoluminescence efficiency and recombination dynamics. The thickness of the GaN capping layer w…
The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers Open
The effects of thermal annealing on the optical properties of Mg-doped cubic zincblende GaN epilayers grown by metalorganic chemical vapor deposition on 3C-SiC/Si (001) substrates are investigated. The photoluminescence spectra show near b…
Photoluminescence efficiency of zincblende InGaN/GaN quantum wells Open
Growing green and amber emitting InGaN/GaN quantum wells in the zincblende, rather than the wurtzite, crystal phase has the potential to improve efficiency. However, optimization of the emission efficiency of these heterostructures is stil…
Effect of Micron-scale Photoluminescence Variation on Droop Measurements in InGaN/GaN Quantum Wells Open
Micro-photoluminescence maps reveal micron-scale spatial variation in intensity, peak emission energy and bandwidth across InGaN/GaN quantum wells. To investigate the effect of this spatial variation on measurements of the dependence of em…