David J. Meyer
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View article: High-k TiO2 dielectric thin films by atomic layer deposition on InAlN/GaN and ScAlN/GaN heterostructures
High-k TiO2 dielectric thin films by atomic layer deposition on InAlN/GaN and ScAlN/GaN heterostructures Open
In this paper, high quality atomic layer deposition (ALD) grown TiO2 was investigated as a high dielectric constant (k) thin film for integration with In0.17Al0.83N/GaN and Sc0.22Al0.78N/GaN high-electron-mobility transistor (HEMT) structu…
View article: Foam concentrate rheology and foam system design
Foam concentrate rheology and foam system design Open
NFPA and EN design standards for systems of firefighting foams devolve the problem of flow calculations for each foam concentrate to the product manufacturers. The data provided by manufacturers do not represent the engineering specificati…
View article: The Unique EELS Signature of Point Defects in Cubic Boron Nitride on Diamond
The Unique EELS Signature of Point Defects in Cubic Boron Nitride on Diamond Open
Journal Article The Unique EELS Signature of Point Defects in Cubic Boron Nitride on Diamond Get access Andrew C Lang, Andrew C Lang Materials Science and Technology Division, U.S. Naval Research Laboratory, Washington DC, United States Co…
View article: Prospectively accelerated dynamic speech MRI at 3 Tesla using a self-navigated spiral based manifold regularized scheme
Prospectively accelerated dynamic speech MRI at 3 Tesla using a self-navigated spiral based manifold regularized scheme Open
This work proposes a self-navigated variable density spiral(VDS) based manifold regularization scheme to prospectively improve dynamic speech MRI at 3T. Short readout 1.3ms spirals were used to minimize off-resonance. A custom 16-channel s…
View article: Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy
Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy Open
We report a method to obtain insight into lower thermal conductivity of β-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical predictions to…
View article: Propagation of regularity for transport equations. A Littlewood-Paley approach
Propagation of regularity for transport equations. A Littlewood-Paley approach Open
It is known that linear advection equations with Sobolev velocity fields have very poor regularity properties: Solutions propagate only derivatives of logarithmic order, which can be measured in terms of suitable Gagliardo seminorms. We pr…
View article: Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures
Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures Open
Epitaxial integration of perovskite oxide materials with GaN has unlocked the potential to improve functionality and performance in high-power RF and power-switching applications. In this work, we demonstrate structural and electrical prop…
View article: Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures
Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures Open
An electroluminescence (EL) phenomenon in unipolar-doped GaN/AlN/GaN double-barrier heterostructures—without any p-type contacts—was investigated from 4.2 K to 300 K. In the range of 200–300 K, the extracted peak photon energies agree with…
View article: Reply on RC3
Reply on RC3 Open
Abstract. Can we improve machine-learning (ML) emulators with synthetic data? If data are scarce or expensive to source and a physical model is available, statistically generated data may be useful for augmenting training sets cheaply. Her…
View article: Reply on RC1
Reply on RC1 Open
Abstract. Can we improve machine-learning (ML) emulators with synthetic data? If data are scarce or expensive to source and a physical model is available, statistically generated data may be useful for augmenting training sets cheaply. Her…
View article: Reply on RC3
Reply on RC3 Open
Abstract. Can we improve machine-learning (ML) emulators with synthetic data? If data are scarce or expensive to source and a physical model is available, statistically generated data may be useful for augmenting training sets cheaply. Her…
View article: Reply on RC2
Reply on RC2 Open
Abstract. Can we improve machine-learning (ML) emulators with synthetic data? If data are scarce or expensive to source and a physical model is available, statistically generated data may be useful for augmenting training sets cheaply. Her…
View article: Band alignment of ScxAl1-xN/GaN heterojunctions
Band alignment of ScxAl1-xN/GaN heterojunctions Open
ScAlN is an emergent ultrawide-band-gap\nmaterial with both a high\npiezoresponse and demonstrated ferroelectric polarization switching.\nRecent demonstration of epitaxial growth of ScAlN on GaN has unlocked\nprospects for new high-power t…
View article: Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic Ta<sub>2</sub>N Thin Films
Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic Ta<sub>2</sub>N Thin Films Open
Epitaxial transition metal nitrides (TMNs) are an emerging class of crystalline thin film metals that can be heteroepitaxially integrated with common group III-nitride semiconductors such as GaN and AlN. Within a binary family of TMN compo…
View article: An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity
An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity Open
Simultaneous occurrence of superconductivity and quantum Hall effect is found in an epitaxial heterostructure of GaN and NbN.
View article: MnO6 Octahedral Tilt Control of Emergent Phenomena at LaMnO3/SrMnO3 Interfaces
MnO6 Octahedral Tilt Control of Emergent Phenomena at LaMnO3/SrMnO3 Interfaces Open
Emergent phases at the interfaces in strongly correlated oxide hetero structures display novelproperties not akin to those of constituting materials. The interfacial ferromagnetism in LaMnO3/SrMnO3 (LMOm/SMOn) superlattices (SLs) is usuall…
View article: The Atomic Structure of Epitaxial Metallic Transition Metal Nitride TaN<sub>x</sub> by STEM-ABF and HAADF
The Atomic Structure of Epitaxial Metallic Transition Metal Nitride TaN<sub>x</sub> by STEM-ABF and HAADF Open
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View article: Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2
Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 Open
Identical GaN/AlN resonant tunneling diode structures were grown on free-standing bulk GaN at substrate temperatures of 760 °C, 810 °C, 860 °C, and 900 °C via plasma-assisted molecular beam epitaxy. Each sample displayed negative different…
View article: Spatio-Temporal Deep Learning Models for Tip Force Estimation During\n Needle Insertion
Spatio-Temporal Deep Learning Models for Tip Force Estimation During\n Needle Insertion Open
Purpose. Precise placement of needles is a challenge in a number of clinical\napplications such as brachytherapy or biopsy. Forces acting at the needle cause\ntissue deformation and needle deflection which in turn may lead to misplacement\…
View article: Noise Measurements of High-Speed, Light-Emitting GaN Resonant-Tunneling Diodes
Noise Measurements of High-Speed, Light-Emitting GaN Resonant-Tunneling Diodes Open
We report here the first RF noise measurements on two designs of n-doped GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a room-temperature negative differential resistance (NDR) and also strong near-UV light emission.…
View article: Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures
Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures Open
Cross-gap light emission is reported in n-type unipolar GaN/AlN double-barrier heterostructure diodes at room temperature. Three different designs were grown on semi-insulating bulk GaN substrates using molecular beam epitaxy (MBE). All sa…
View article: Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods Open
The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in a thin film grow…
View article: Impact of 2 MeV Proton Irradiation on the Large-Signal Performance of Ka-Band GaN HEMTs
Impact of 2 MeV Proton Irradiation on the Large-Signal Performance of Ka-Band GaN HEMTs Open
GaN high electron mobility transistors (HEMTs) have shown the potential to be extremely tolerant of the space radiation environment. To understand whether this radiation tolerance extends to millimeter wave GaN technology nodes, we have in…
View article: Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors Open
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) chann…
View article: <i>I2</i> basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs
<i>I2</i> basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs Open
Here, we present the observation of a bias-induced, degradation-enhancing defect process in plasma-assisted molecular beam epitaxy grown reverse gate-biased AlGaN/GaN high electron mobility transistors (HEMTs), which is compatible with the…
View article: Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy
Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy Open
The sensitivity of the surface morphology and microstructure of N-polar-oriented InAlN to variations in composition, temperature, and layer thickness for thin films grown by plasma-assisted molecular beam epitaxy (PAMBE) has been investiga…
View article: Additional file 2: of Combining powers of linkage and association mapping for precise dissection of QTL controlling resistance to gray leaf spot disease in maize (Zea mays L.)
Additional file 2: of Combining powers of linkage and association mapping for precise dissection of QTL controlling resistance to gray leaf spot disease in maize (Zea mays L.) Open
Days to silking data collected from the representatives of the Association panel planted in Sidney (IL) in 2012. Independent field trial was conducted in Sidney (IL) in 2012, where flowering time data were collected from 254 representative…