David Lackner
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View article: Quasi-open circuit response times of single- and multi-junction InGaAs photonic power converters
Quasi-open circuit response times of single- and multi-junction InGaAs photonic power converters Open
Photonic power converters provide an emerging alternative to traditional metallic cabling due to their immunity to electromagnetic interference and for minimizing fire hazards as well as their ability to wirelessly power loads. In this wor…
View article: Machine learning enhanced design and knowledge discovery for multi-junction photonic power converters
Machine learning enhanced design and knowledge discovery for multi-junction photonic power converters Open
Machine learning is proving to be a revolutionary tool across many disciplines, including optoelectronic device design. In this report, we compare classical and machine learning enhanced design optimization methodologies. We investigate, a…
View article: Overcoming Material Incompatibility via 2D Free‐Surface Engineering
Overcoming Material Incompatibility via 2D Free‐Surface Engineering Open
Heteroepitaxy has been pivotal in advancing both optoelectronics and microelectronics, driving the development of faster, more efficient devices across diverse applications. However, achieving high material quality remains challenging due …
View article: Optimization of GaInP absorber design for indoor photovoltaic conversion efficiency above 40%
Optimization of GaInP absorber design for indoor photovoltaic conversion efficiency above 40% Open
Indoor photovoltaics (IPV) is a key technology for powering low-energy electronics, particularly Internet of Things devices, where wired power or frequent battery replacements are impractical. IPV cells convert artificial indoor light into…
View article: Multi-junction laser power converters exceeding 50% efficiency in the short wavelength infrared
Multi-junction laser power converters exceeding 50% efficiency in the short wavelength infrared Open
Photonic or laser power converters are crucial components in power-by-light systems. However, their use in long-distance applications has been hindered by low efficiencies and output voltages within the optical fiber transmission window of…
View article: Metalorganic Vapor‐Phase Epitaxy Growth of GaAs Rear‐Heterojunction Solar Cells at 94 µm/h
Metalorganic Vapor‐Phase Epitaxy Growth of GaAs Rear‐Heterojunction Solar Cells at 94 µm/h Open
In this study, a GaAs single‐junction solar cell with an absorber layer grown at a very high rate of 94 µm/h via metalorganic vapor‐phase epitaxy (MOVPE) is demonstrated, employing a low V/III ratio of 5. This approach enables the depositi…
View article: Subcell‐Resolved EQE Method Using Reverse Voltage Biasing for Multijunction Photovoltaics With Overlapping Subcell Absorptance
Subcell‐Resolved EQE Method Using Reverse Voltage Biasing for Multijunction Photovoltaics With Overlapping Subcell Absorptance Open
External quantum efficiency (EQE) measurements of individual subcells in multijunction photovoltaic devices are essential to evaluate current matching and to iterate the design process. The standard light biasing technique used to measure …
View article: Rear-heterojunction GaInP laser power converter with 59% monochromatic efficiency at 590 nm
Rear-heterojunction GaInP laser power converter with 59% monochromatic efficiency at 590 nm Open
Photonic power converters (PPCs) are devices that convert narrowband light at specific wavelengths into electrical energy based on the photovoltaic effect. They are used in optical power transmission systems, which offer advantages over co…
View article: InP-on-GaAs engineered substrates: A pathway toward low-cost, high-efficiency optoelectronic device fabrication
InP-on-GaAs engineered substrates: A pathway toward low-cost, high-efficiency optoelectronic device fabrication Open
Indium Phosphide (InP) plays a pivotal role in the semiconductor industry, particularly in the development of high-power, high-frequency optoelectronic devices that are essential for next-generation applications not only in telecommunicati…
View article: GaAs//CuInGaSe‐Based Multijunction Solar Cells with 30% Efficiency Under Low Concentrated Sunlight
GaAs//CuInGaSe‐Based Multijunction Solar Cells with 30% Efficiency Under Low Concentrated Sunlight Open
Multijunction (MJ) solar cells have demonstrated very high efficiencies (>30%) owing to the effective use of solar energy. Among these, the GaAs//CuInGaSe(CIGSe)‐based MJ solar cell is unique owing to its features, such as being lightweigh…
View article: Sheet Resistance Optimization in (Al)GaInP Solar Cells for Concentrator Quadruple–Junction Solar Cells
Sheet Resistance Optimization in (Al)GaInP Solar Cells for Concentrator Quadruple–Junction Solar Cells Open
The reduction of the series resistance in multi‐junction solar cells is of high importance for attaining peak efficiencies in concentrator photovoltaics. This study showcases strategies to reduce the sheet resistance of the uppermost subce…
View article: Table of Contents
Table of Contents Open
View article: Monolithically integrated 940 nm VCSELs on bulk Ge substrates
Monolithically integrated 940 nm VCSELs on bulk Ge substrates Open
This research successfully developed an independent Ge-based VCSEL epitaxy and fabrication technology route, which set the stage for integrating AlGaAs-based semiconductor devices on bulk Ge substrates. This is the second successful Ge-bas…
View article: Wafer‐bonded two‐terminal III‐V//Si triple‐junction solar cell with power conversion efficiency of 36.1% at AM1.5g
Wafer‐bonded two‐terminal III‐V//Si triple‐junction solar cell with power conversion efficiency of 36.1% at AM1.5g Open
In this work, we present the fabrication and analysis of a wafer‐bonded GaInP/GaInAsP//Si triple‐junction solar cell with 36.1% conversion efficiency under AM1.5g spectral illumination. The new cell design presents an improvement over prev…
View article: Off-Axis Electron Holography of In-Situ-Biased Highly-Doped p-AlGaAs/n-GaInP Junctions for Solar Cell Applications
Off-Axis Electron Holography of In-Situ-Biased Highly-Doped p-AlGaAs/n-GaInP Junctions for Solar Cell Applications Open
View article: Monolithically Integrated 940 nm Half VCSELs on Bulk Ge Substrates
Monolithically Integrated 940 nm Half VCSELs on Bulk Ge Substrates Open
High-quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells (MQWs) were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. Even without any design and process optimization for the Ge s…
View article: Proton radiation hardness of GaInAsP alloys for space solar cell applications
Proton radiation hardness of GaInAsP alloys for space solar cell applications Open
Recent technology development in space mission design has raised a demand for space solar cells with a higher level of radiation tolerance as compared with state‐of‐the‐art, commercially available products. Therefore, new material systems …
View article: Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates
Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates Open
We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional D…
View article: Significance of cardiovascular comorbidity in patients with chronic myelomonocytic leukemia
Significance of cardiovascular comorbidity in patients with chronic myelomonocytic leukemia Open
View article: Monolithically integrated 940 nm half VCSELs on bulk Ge substrates
Monolithically integrated 940 nm half VCSELs on bulk Ge substrates Open
High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown structures have photoluminescence spectra and reflectance …
View article: Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates
Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates Open
We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional D…
View article: Improvements in ultra‐light and flexible epitaxial lift‐off GaInP/GaAs/GaInAs solar cells for space applications
Improvements in ultra‐light and flexible epitaxial lift‐off GaInP/GaAs/GaInAs solar cells for space applications Open
A thin, lightweight, flexible solar cell is developed that maximizes the power‐to‐mass ratio under AM0 illumination and has a competitive efficiency after typical high energy electron irradiation. The inverted metamorphic triple junction (…
View article: Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates
Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates Open
High quality 940 nm Al x Ga 1-x As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs …
View article: Increasing transferability between design and epitaxial growth of multi-junction solar cells
Increasing transferability between design and epitaxial growth of multi-junction solar cells Open
In this work we report on a procedure to increase the reproducibility of multi-junction solar cell growth. This is achieved by applying a systematic offset to room-temperature photoluminescence measurement to match the required band gap fo…
View article: Ultra-lightweight and flexible inverted metamorphic four junction solar cells for space applications
Ultra-lightweight and flexible inverted metamorphic four junction solar cells for space applications Open
In this work an inverted metamorphic four junction (IMM4J) solar cell with 30.9% conversion efficiency in beginning of life conditions under the AM0 (1367 W/m 2 ) spectrum is presented. Additionally, our newest improved IMM3J cell, consist…
View article: Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates
Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates Open
High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk G…
View article: Two‐terminal III–V//Si triple‐junction solar cell with power conversion efficiency of 35.9 % at AM1.5g
Two‐terminal III–V//Si triple‐junction solar cell with power conversion efficiency of 35.9 % at AM1.5g Open
III–V//Si multijunction solar cells offer a pathway to increase the power conversion efficiency beyond the fundamental Auger limit of silicon single‐junctions. In this work, we demonstrate how the efficiency of a two‐terminal wafer‐bonded …
View article: Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III–V/Si dual-junctions
Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III–V/Si dual-junctions Open
Recently, significant progress in the development of III–V/Si dual-junction solar cells has been achieved. This not only boosts the efficiency of Si-based photovoltaic solar cells but also offers the possibility of highly efficient green h…
View article: Middle Cell Development for Wafer-Bonded III-V//Si Tandem Solar Cells
Middle Cell Development for Wafer-Bonded III-V//Si Tandem Solar Cells Open
This article focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, and their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction solar ce…
View article: Pushing the Boundaries of Photovoltaic Light to Electricity Conversion: A GaAs Based Photonic Power Converter with 68.9% Efficiency
Pushing the Boundaries of Photovoltaic Light to Electricity Conversion: A GaAs Based Photonic Power Converter with 68.9% Efficiency Open
We present recent results achieved in the field of photonic power conversion, i.e. monochromatic light to electricity conversion, using photovoltaic cells. Based on a thin film processing approach we leverage photon recycling and optical r…