David O. Bracher
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View article: Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control
Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control Open
Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emiss…
View article: Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center Open
Significance Semiconductor point defects have shown great promise in their application to quantum information and sensing in the solid state. However, it is an ongoing challenge to efficiently access the light emitted by these spin-active …
View article: Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center Open
Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter inter…
View article: Fabrication of high-quality nanobeam photonic crystal cavities in 4H silicon carbide with embedded color centers
Fabrication of high-quality nanobeam photonic crystal cavities in 4H silicon carbide with embedded color centers Open
A wide band-gap semiconductor with a long history of growth and device fabrication, silicon carbide (SiC) has attracted recent attention for hosting several defects with properties similar to the nitrogen vacancy center in diamond. In the …