Gabriel Ferro
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View article: Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC
Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC Open
International audience
View article: Tilted columnar metal film as transducer of transverse coherent acoustic phonons in picosecond acoustics
Tilted columnar metal film as transducer of transverse coherent acoustic phonons in picosecond acoustics Open
Picosecond acoustics has been widely used to study thin film elasticity, hypersound attenuation, and adhesion of thin films to substrates. A major limitation of the technique is its restriction to only longitudinal waves. Although work has…
View article: Polarity Effect on the Heteroepitaxial Growth of B<sub>x</sub>C on 4H-SiC by CVD
Polarity Effect on the Heteroepitaxial Growth of B<sub>x</sub>C on 4H-SiC by CVD Open
The chemical vapor deposition (CVD) growth of boron carbide (B x C) layers on 4H-SiC, 4°off substrates was studied. Depending on the polarity of the substrate, different results were obtained. On Si face, the direct CVD growth at 1600°C un…
View article: Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500°C
Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500°C Open
The thermochromic properties (color change with temperature) of n type doped SiC wafers of different polytypes (3C, 4H and 6H) have been investigated up to 500°C under air. It was found that 3C-SiC color passes from bright yellow at room t…
View article: Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach Open
Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4°off wafers were structured in macrosteps using Si melting in a SiC-Si-SiC sandwich configuration. Si spreading difficulties were observed in the case of trench-patterned samples while t…
View article: Epitaxial Growth of Boron Carbide on 4H-SiC
Epitaxial Growth of Boron Carbide on 4H-SiC Open
In this work, the successful heteroepitaxial growth of boron carbide (B x C) on 4HSiC(0001) 4{\textdegree} off substrate using chemical vapor deposition (CVD) is reported. Towards this end, a two-step procedure was developed, involving the…
View article: Epitaxial Growth of Boron Carbide on 4H-SiC
Epitaxial Growth of Boron Carbide on 4H-SiC Open
In this work, the successful heteroepitaxial growth of boron carbide (B x C) on 4HSiC(0001) 4° off substrate using chemical vapor deposition (CVD) is reported. Towards this end, a two-step procedure was developed, involving the 4H-SiC subs…
View article: Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction
Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction Open
The reconstruction of 4°off 4H-SiC surfaces was investigated using Si melting at 1550°C in a SiC/Si/SiC sandwich configuration. Despite systematically obtaining a macrostepped morphology over the entire areas in contact with the liquid Si,…
View article: Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration
Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration Open
4H-SiC/Si (liq) /4H-SiC stacks were treated at 1550-1600°C under H 2 in a RF-heated cold-wall reactor in order to generate macrosteps-structuring of the 4°off SiC(0001) wafers. Using 400 μm thick liquid Si, the observed important matter tr…
View article: Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces
Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces Open
13 pages, 5 figures; work presented at the International Conference on the Physics of Semiconductors, Sydney, 2022
View article: Nanoscale mapping of sub-gap electroluminescence from step-bunched,\n oxidized 4H-SiC surfaces
Nanoscale mapping of sub-gap electroluminescence from step-bunched,\n oxidized 4H-SiC surfaces Open
Scanning tunneling luminescence microscopy (STLM) along with scanning\ntunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC\nsurface prepared on the silicon face of a commercial, n-type SiC wafer using a\nsilicon melt…
View article: Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration
Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration Open
In view of obtaining a step bunched morphology on large 4H-SiC surfaces, a sandwich configuration is investigated. A piece of silicon is melted between two 4H-SiC 4° off wafers, allowing a better spreading of the liquid than a Si drop appr…
View article: 3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations
3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations Open
This work investigates the 3C-SiC heteroepitaxial growth on silicon substrates having a wide variety of orientations, i.e. (100) on axis and 2°off, (111), (110), (211), (311), (331), (510), (553) and (995). All the 3C-SiC layers were grown…
View article: Thermochromic properties of NiTiO3
Thermochromic properties of NiTiO3 Open
International audience
View article: Growth and doping of silicon carbide with germanium: a review
Growth and doping of silicon carbide with germanium: a review Open
International audience
View article: Mono-Versus Poly-Crystalline SiC for Nuclear Applications
Mono-Versus Poly-Crystalline SiC for Nuclear Applications Open
3C-SiC layers of different microstructures (monocrystalline (100) and (111) oriented and polycrystalline) were implanted with high energy (800 keV) 129 Xe ++ ions. Implantations were performed at room temperature (RT) and at 500 °C using t…
View article: Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al
Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al Open
Because the well-known site-competition and step-controlled epitaxy rules cannot reasonably describe all the incorporation processes of the main impurities (Al and N) into 4H-SiC during epitaxy, the concept of replacement incorporation was…
View article: Nanodiamond Integration with Photonic Devices
Nanodiamond Integration with Photonic Devices Open
The progress in integration of nanodiamond with photonic devices is analyzed in the light of quantum optical applications. Nanodiamonds host a variety of optically active defects, called color centers, which provide rich ground for photoni…
View article: Diamond Color Center Integration with a Silicon Carbide Photonics Platform
Diamond Color Center Integration with a Silicon Carbide Photonics Platform Open
The incorporation of diamond color centers into group-IV photonics platforms is an outstanding challenge. Cubic silicon carbide (3C-SiC) is an excellent candidate to form such hybrid devices. On one hand, its optical properties resemble di…
View article: Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p<sup>++</sup> Emitters
Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p<sup>++</sup> Emitters Open
This study deals with the electrical characterization of PiN diodes fabricated on a 4°off-axis 4H-SiC n + substrate with a n - epilayer (1×10 16 cm -3 / 10 µm). Optimized p ++ epitaxial areas were grown by Vapour-Liquid-Solid (VLS) transpo…
View article: Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces
Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces Open
In this study, we compare the electrical properties of MOS capacitors fabricated on different surface morphologies. Comparing a standard, low-roughness (<1nm), surface with one with a roughness of ~40nm, characterized by big macrosteps and…
View article: Silicon Deposition on 3C-SiC Seeds of Different Orientations
Silicon Deposition on 3C-SiC Seeds of Different Orientations Open
Silicon deposition on 3C-SiC seeds was studied as a function of seed orientations and thicknesses. The 3C-SiC seeds were grown on silicon substrates of (100), (110), (111) and (211) orientations by standard two-step CVD (low temperature ca…
View article: Nanodiamond integration with photonic devices
Nanodiamond integration with photonic devices Open
We discuss the progress in integration of nanodiamonds with photonic devices for quantum optics applications. Experimental results in GaP, SiO2 and SiC-nanodiamond platforms show that various regimes of light and matter interaction can be …