Debdeep Jena
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View article: Erratum: “Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy” [APL Mater. 13, 101117 (2025)]
Erratum: “Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy” [APL Mater. 13, 101117 (2025)] Open
View article: Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire
Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire Open
We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of $0.5^\text{o}$, $2^\text{o}$, $4^\text{o}$, and $10^\text{o}$ towards m-axis. …
View article: High Mobility Multiple-Channel AlScN/GaN Heterostructures
High Mobility Multiple-Channel AlScN/GaN Heterostructures Open
Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this work, we examine the transport properties of two dimension…
View article: A Compact Model for Polar Multiple-Channel Field Effect Transistors: A Case Study in III-V Nitride Semiconductors
A Compact Model for Polar Multiple-Channel Field Effect Transistors: A Case Study in III-V Nitride Semiconductors Open
A compact analytical model is developed for the mobile charge density of polar multiple channel field effect transistors. Two dimensional electron and hole gases can be potentially induced by spontaneous and piezoelectric polarization in p…
View article: Lorentzian Switching Dynamics in HZO-based FeMEMS Synapses for Neuromorphic Weight Storage
Lorentzian Switching Dynamics in HZO-based FeMEMS Synapses for Neuromorphic Weight Storage Open
Neuromorphic computing demands synaptic elements that can store and update weights with high precision while being read non-destructively. Conventional ferroelectric synapses store weights in remnant polarization states and might require d…
View article: Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy
Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy Open
We report a two-step film-growth process using suboxide molecular-beam epitaxy (S-MBE) that produces Si-doped α-Ga2O3 with record transport properties. The method involves growing a relaxed α-(AlxGa1−x)2O3 buffer layer on m-plane sapphire …
View article: Indium surfactant assisted molecular beam epitaxy of AlScN
Indium surfactant assisted molecular beam epitaxy of AlScN Open
The epitaxial growth of AlScN on GaN has been traditionally performed in the nitrogen-rich condition because growth in metal-rich conditions results in the formation of Al–Sc intermetallic precipitates. Nitrogen-rich growth conditions prom…
View article: Controlling the p-type conductivity of α-SnO thin films by potassium doping
Controlling the p-type conductivity of α-SnO thin films by potassium doping Open
Development of a high-performance, p-type oxide channel is crucial to realize all-oxide complementary metal–oxide semiconductor technology that is amenable to 3D integration. Among p-type oxides, α-SnO is one of the most promising owing to…
View article: The effect of boron incorporation on leakage and wake-up in ferroelectric Al1−xScxN
The effect of boron incorporation on leakage and wake-up in ferroelectric Al1−xScxN Open
This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric aluminum scandium nitride (Al1-xScxN) thin films, focusing on leakage currents, wake-up effects, and imprint behavior. Al…
View article: A cesium-iodide surface treatment for enhancement of negative electron affinity photocathode chemical robustness
A cesium-iodide surface treatment for enhancement of negative electron affinity photocathode chemical robustness Open
Photocathodes activated to negative electron affinity with a cesium-based activation layer, such as GaAs and GaN, can be used for generating spin-polarized electron beams, but their extreme sensitivity to chemical poisoning limits their op…
View article: Structural, electronic, and superconducting properties of MBE-grown tantalum nitride films on c-plane sapphire
Structural, electronic, and superconducting properties of MBE-grown tantalum nitride films on c-plane sapphire Open
Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be δ-TaN with a rock salt cubic structure and γ-Ta2N with a hexagonal structure. Atomic force mic…
View article: Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to <i>β</i>-Ga2O3 by removing surface carbon
Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to <i>β</i>-Ga2O3 by removing surface carbon Open
Preserving a contamination-free metal–semiconductor interface in β-Ga2O3 is critical to achieve consistently low resistance (< 1 Ω-mm) ohmic contacts. Here, we report a scanning transmission electron microscopy study on the variation in…
View article: THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure
THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure Open
The recent discovery of highly conducting two-dimensional hole gases (2DHGs) in GaN/AlN heterojunctions has opened the door to efficient complementary GaN electronics, a long-standing challenge in wide-bandgap semiconductor device physics.…
View article: Ultrawide Bandgap Channel Polarization‐Doped Junction Field‐Effect Transistor
Ultrawide Bandgap Channel Polarization‐Doped Junction Field‐Effect Transistor Open
An ultrawide bandgap (UWBG) AlGaN channel polarization‐doped junction field‐effect transistor (POLJFET) grown by molecular beam epitaxy on a bulk AlN substrate is presented. The POLJFET leverages distributed polarization doping for the p ‐…
View article: The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN
The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN Open
This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al_{1-x}Sc_xN ) thin films, focusing on leakage currents, wake-up effects, and imprint behavio…
View article: Epitaxial high-K AlBN barrier GaN HEMTs
Epitaxial high-K AlBN barrier GaN HEMTs Open
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transisto…
View article: Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates Open
We report the observation of Shubnikov-de Haas (SdH) oscillations in coherently strained, low-dislocation AlN/GaN/AlN quantum wells (QWs), including both undoped and $δ$-doped structures. SdH measurements reveal a single subband occupation…
View article: Two-carrier model-fitting of Hall effect in semiconductors with dual-band occupation: A case study in GaN two-dimensional hole gas
Two-carrier model-fitting of Hall effect in semiconductors with dual-band occupation: A case study in GaN two-dimensional hole gas Open
We develop a two-carrier Hall effect model-fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density (∼4×1013cm−2) polarization-induced two-dimensional hole gas (2DHG) in a GaN/AlN heterostructure. …
View article: Integrated Workforce Assignment in Identical Parallel Machine Scheduling with Compressible Setup Times
Integrated Workforce Assignment in Identical Parallel Machine Scheduling with Compressible Setup Times Open
View article: <i>In situ</i> etching of <i>β</i>-Ga2O3 using <i>tert</i>-butyl chloride in an MOCVD system
<i>In situ</i> etching of <i>β</i>-Ga2O3 using <i>tert</i>-butyl chloride in an MOCVD system Open
In this study, we investigate in situ etching of β-Ga2O3 in a metalorganic chemical vapor deposition system using tert-butyl chloride (TBCl). We report etching of both heteroepitaxial 2¯01-oriented and homoepitaxial (010)-oriented β-Ga2O3 …
View article: Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas Open
We develop a two-carrier Hall effect model fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density ($\sim4\times10^{13}$ cm$^2$/Vs) polarization-induced two-dimensional hole gas (2DHG) in a GaN/Al…
View article: Chasing Schottky–Mott: Metal-first non-alloyed contacts to <i>β</i>-Ga2O3 for interface quality and minimal surface modification
Chasing Schottky–Mott: Metal-first non-alloyed contacts to <i>β</i>-Ga2O3 for interface quality and minimal surface modification Open
Metal-first non-alloyed ohmic and Schottky contacts are fabricated on β-Ga2O3 with a range of metal work functions (ϕM). The resulting ohmic contacts are of high quality with a contact resistance (Rc) as low as 0.069 ± 0.003 Ω mm. Measurem…
View article: Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures
Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures Open
Unlike naturally occurring oxide crystals such as ruby and gemstones, there are no naturally occurring nitride crystals because the triple bond of the nitrogen molecule is one of the strongest bonds in nature. Here, we report that when the…
View article: Epitaxial AlBN/β‐Nb<sub>2</sub>N Ferroelectric/Superconductor Heterostructures
Epitaxial AlBN/β‐Nb<sub>2</sub>N Ferroelectric/Superconductor Heterostructures Open
View article: Publisher Correction: Using both faces of polar semiconductor wafers for functional devices
Publisher Correction: Using both faces of polar semiconductor wafers for functional devices Open
View article: Lattice-matched multiple channel AlScN/GaN heterostructures
Lattice-matched multiple channel AlScN/GaN heterostructures Open
AlScN is a new wide bandgap, high-k, ferroelectric material for radio frequency (RF), memory, and power applications. Successful integration of high-quality AlScN with GaN in epitaxial layer stacks depends strongly on the ability to contro…
View article: Using both faces of polar semiconductor wafers for functional devices
Using both faces of polar semiconductor wafers for functional devices Open
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide-bandgap semiconductor gallium nitride (GaN) leads to a large electronic polarization along a unique crystal axis1. This makes the two sur…
View article: Ferroelectric AlBN films by molecular beam epitaxy
Ferroelectric AlBN films by molecular beam epitaxy Open
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode, Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switc…
View article: In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system
In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system Open
In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successful etching of both heteroepitaxial (-201)-oriented and homoe…
View article: Epitaxial AlBN/β‐Nb<sub>2</sub>N Ferroelectric/Superconductor Heterostructures
Epitaxial AlBN/β‐Nb<sub>2</sub>N Ferroelectric/Superconductor Heterostructures Open
We report the growth of AlBN/β‐Nb 2 N nitride epitaxial heterostructures in which the AlBN is ferroelectric, and β‐Nb 2 N with metallic resistivity ≈40 μ at 300 K becomes superconducting below T C ≈ 0.5 K. Using nitrogen plasma molecular b…