D. Biswas
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View article: STUDY OF VALIDITY AND RELIABILITY OF STATE TRAIT ANXIETY INVENTORY,EXPECTED BENEFITS OF DENTURE SCALE, BURDEN OF TOOTH LOSS SCALE BASED ON REGIONAL LANGUAGE AND CULTURAL DIFFERENCES
STUDY OF VALIDITY AND RELIABILITY OF STATE TRAIT ANXIETY INVENTORY,EXPECTED BENEFITS OF DENTURE SCALE, BURDEN OF TOOTH LOSS SCALE BASED ON REGIONAL LANGUAGE AND CULTURAL DIFFERENCES Open
The aim of this study is to validate 3 psychometric scales in regional language Bengali and Hindi to be used for analysis in West Bengal population.Complete Edentulism,the condition of being without teeth,is a significant health issue affe…
View article: A Reference Dataset for Training Interventions in Online Hate Speech
A Reference Dataset for Training Interventions in Online Hate Speech Open
Addressing online hate speech is a crucial but complex challenge, one that can be supported through Natural Language Processing (NLP) techniques. While previous research has primarily focused on developing NLP methods to automatically dete…
View article: 5‐GHz integer‐ <i>N</i> PLL with spur reduction sampler
5‐GHz integer‐ <i>N</i> PLL with spur reduction sampler Open
In this work, a 5‐GHz current‐controlled ring oscillator based integer PLL is implemented with a spur reduction sampler to reduce the reference spurs. The sampler can have taps with each tap sampling the oscillator's control voltage at off…
View article: A comparative TCAD assessment of III-V channel materials for future high speed and low power logic applications
A comparative TCAD assessment of III-V channel materials for future high speed and low power logic applications Open
In this work, by means physics based drift-diffusion simulations, three different narrow band gap semiconductors; InAs, InSb and In0.53Ga0.47As, and their associated heterostructures have been studied for future high speed and low power lo…
View article: Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability
Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability Open
InxAl1-xN/AlN/GaN HEMT device performance is analysed at various temperatures with the help of physics based 2-D simulation using commercially available BLAZE and GIGA modules from SILVACO. Various material parameters viz. band-gap, low fi…
View article: Strain Effects on Band Structure of Wurtzite InGaN/GaN Quantum Well on Si Substrate
Strain Effects on Band Structure of Wurtzite InGaN/GaN Quantum Well on Si Substrate Open
Heteroepitaxial crystal growth of InGaN/GaN Quantum Well (QW) on Si substrate is necessary for the development of visible and ultraviolet (UV) Light Emitting Diodes (LEDs). In this work we accumulate the efforts that have been made to focu…