Dedong Han
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View article: A Two‐Step Annealing Treatment Method for InAlZnO Transistors Toward 3D Integration
A Two‐Step Annealing Treatment Method for InAlZnO Transistors Toward 3D Integration Open
A two‐step thermal annealing treatment strategy is proposed to enhance the electrical performance of the InAlZnO (IAZO) transistors, where the devices are initially pre‐annealing at 400 °C for 30 min, followed by a second annealing step ac…
View article: Enhanced On-State Current and Stability in Heterojunction ITO/ZnO Transistors: A Mechanistic Analysis
Enhanced On-State Current and Stability in Heterojunction ITO/ZnO Transistors: A Mechanistic Analysis Open
The growing demand for high-performance oxide transistors in advanced integrated circuits (ICs) underscores the need for innovative device structures, with heterojunctions emerging as a promising approach. This study presents high-performa…
View article: IMPACT OF URBANIZATION ON CARBON BALANCE CAPACITY: COUPLING DEGREE AND OBSTACLE ANALYSIS
IMPACT OF URBANIZATION ON CARBON BALANCE CAPACITY: COUPLING DEGREE AND OBSTACLE ANALYSIS Open
View article: Intelligent Method Combining Models and Process Data for Springback Prediction in Sheet Metal Stamping
Intelligent Method Combining Models and Process Data for Springback Prediction in Sheet Metal Stamping Open
View article: Thin-film transistor for temporal self-adaptive reservoir computing with closed-loop architecture
Thin-film transistor for temporal self-adaptive reservoir computing with closed-loop architecture Open
Reservoir computing is a powerful neural network–based computing paradigm for spatiotemporal signal processing. Recently, physical reservoirs have been explored based on various electronic devices with outstanding efficiency. However, the …
View article: High-performance nano-scale InSnO transistors
High-performance nano-scale InSnO transistors Open
Nanoscale short-channel oxide thin film transistors (TFTs) have attracted widespread research interest due to their potential applications in advanced display and memory devices. In this work, we fabricate 10 μ m channel length indium-tin-…
View article: Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors
Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors Open
Oxide thin-film transistors (TFTs) are of increasing interest in the field of advanced displays. In this work, we explore Al, InSnO (ITO), Ti, and Mo as source/drain electrodes of ITO TFTs. A comparison study is conducted on the electrical…
View article: Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors
Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors Open
Transparent conductive oxides (TCO) have been extensively investigated as channel materials for thin-film transistors (TFTs). In this study, highly transparent and conductive InSnO (ITO) and ZnO films were deposited, and their material pro…
View article: Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process
Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process Open
Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer depo…
View article: Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors
Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors Open
InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-cost integrated circuits (IC). In the present work, we demonstrate the high-performance, robust ITO TFTs that fabricated at process temperature n…
View article: P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C
P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C Open
Herein, ZnO thin film transistors (TFTs) are fabricated on a flexible substrate with process temperature no more than 100 □. It is notable that the ZnO TFTs show preferable hysteresis and ouput characteristics with a field effect mobility …
View article: High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates With a Maximum Process Temperature of 100 °C
High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates With a Maximum Process Temperature of 100 °C Open
In the present work, we testify a strategy to achieve high-performance ZnO thin film transistors (TFTs) on a flexible PET substrate at a maximum process temperature no more than 100 °C. Interestingly, the ZnO TFTs exhibit superior electric…
View article: Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure
Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure Open
View article: Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimized Multi-Stacked Active-Layer Structures
Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimized Multi-Stacked Active-Layer Structures Open
In this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers (T…
View article: Tunable arsenene band gap in arsenene/graphene heterostructures
Tunable arsenene band gap in arsenene/graphene heterostructures Open
Using density functional theory calculations with van der Waals (vdW) corrections, we investigate how the interlayer orientation affects the electronic properties of arsenene/graphene heterostructures. We show that the vertical vdW interac…
View article: Performance Enhancement of TiZO Thin Film Transistors by Introducing a Thin ITO Interlayer
Performance Enhancement of TiZO Thin Film Transistors by Introducing a Thin ITO Interlayer Open
In order to explore the influence of interlayer between dielectric layer and channel layer on performance of thin film transistors (TFTs), the single layer titanium doped zinc oxide (TiZO) TFTs and the dual layer indium tin oxide (ITO)/TiZ…
View article: Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate Open
View article: Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique
Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique Open
This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures ha…
View article: Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate
Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate Open
View article: High mobility transparent flexible nickel‐doped zinc oxide thin‐film transistors with small subthreshold swing
High mobility transparent flexible nickel‐doped zinc oxide thin‐film transistors with small subthreshold swing Open
High‐mobility nickel (Ni)‐doped zinc oxide thin‐film transistors (NZO TFTs) have been successfully fabricated on flexible transparent plastic substrates at a low temperature. The devices all exhibited good electrical properties with small …
View article: Effects of substrate temperature on performance of calcium‐doped zinc oxide TFTs
Effects of substrate temperature on performance of calcium‐doped zinc oxide TFTs Open
In this reported work, high‐performance fully transparent bottom‐gate‐type calcium‐doped zinc oxide thin‐film transistors (Ca–ZnO TFTs) have been successfully fabricated on glass substrate. The effects of substrate temperature during activ…
View article: Fully transparent flexible dual‐layer channel Ga‐doped ZnO thin‐film transistors on plastic substrates
Fully transparent flexible dual‐layer channel Ga‐doped ZnO thin‐film transistors on plastic substrates Open
Fully transparent dual‐layer Ga‐doped zinc oxide (GZO) thin‐film transistors (TFTs) were fabricated on flexible plastic substrate by room temperature processes. The GZO thin films are deposited by radio‐frequency sputtering according to th…
View article: Effects of channel thickness on characteristics of HZO‐TFTs fabricated at low temperature
Effects of channel thickness on characteristics of HZO‐TFTs fabricated at low temperature Open
The channel process to further improve the performance of bottom gate hafnium‐doped zinc oxide (HZO) thin‐film transistors (TFTs) is optimised. The effects of channel thickness on the electrical performances of HZO TFTs is studied. The res…
View article: Performance enhancement of fully transparent tin‐doped zinc oxide thin‐film transistors fabricated by sputtering at low temperature
Performance enhancement of fully transparent tin‐doped zinc oxide thin‐film transistors fabricated by sputtering at low temperature Open
Fully transparent tin‐doped zinc oxide thin‐film transistors (TZO TFTs) were successfully fabricated on glass substrate by radio‐frequency sputtering at room temperature. In this reported work, TZO is adopted as the channel layer, SiO 2 as…
View article: Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO<sub>2</sub>Based RRAM Devices
Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO<sub>2</sub>Based RRAM Devices Open
HfAlO 2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO 2 and Al 2 O 3 . Effect of ozone treatment on the resistive switching uniformity of HfAlO 2 b…