Deji Akinwande
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View article: First-principles investigation of the resistive switching energetics in monolayer MoS2: insights into metal diffusion and adsorption
First-principles investigation of the resistive switching energetics in monolayer MoS2: insights into metal diffusion and adsorption Open
A deeper understanding of resistive switching (RS) in 2D materials is essential for advancing neuromorphic computing. The Dissociation-Diffusion-Adsorption (DDA) model offers a useful framework for probing RS mechanisms in non-volatile mem…
View article: Defect-Aware Extreme Device Scaling Limits of 2D Memristive Technologies
Defect-Aware Extreme Device Scaling Limits of 2D Memristive Technologies Open
Memristors hold great promise for next-generation artificial intelligence hardware, however, this requires their extreme miniaturization for high-density crossbar arrays. The challenge lies in that conventional memristor operation depends …
View article: Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors
Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors Open
This review presents a strategic roadmap for integrating two-dimensional materials (2DMs) into multi-bridge channel (MBC) complementary field-effect transistors (CFETs). It highlights key integration challenges, essential design considerat…
View article: BIOCOMPATIBILITY OF LARGE-AREA 2-DIMENSIONAL ELECTRONIC MATERIALS WITH NEURAL STEM CELLS
BIOCOMPATIBILITY OF LARGE-AREA 2-DIMENSIONAL ELECTRONIC MATERIALS WITH NEURAL STEM CELLS Open
Two-dimensional (2D) electronic materials hold immense promise for next-generation bio/neuro-electronic interfaces, but their biocompatibility has remained uncertain due to conflicting reports from studies focused on exfoliated flakes and …
View article: Understanding and predicting trends in adsorption energetics on monolayer transition metal dichalcogenides
Understanding and predicting trends in adsorption energetics on monolayer transition metal dichalcogenides Open
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as promising candidates for non-volatile resistive switching (NVRS) due to their atomic-scale thickness, enabling high-density integration and low energy consumption…
View article: Effect of electric field on the hysteresis and switching behavior of the MoS2/Au(111) heterojunction
Effect of electric field on the hysteresis and switching behavior of the MoS2/Au(111) heterojunction Open
It can be said that the interface is the device. A holistic understanding of interfacial interactions and electronic structure of 2D materials with electrodes is far from complete, but is necessary for tailored electronic devices, includin…
View article: Mechanisms of resistive switching in two-dimensional monolayer and multilayer materials
Mechanisms of resistive switching in two-dimensional monolayer and multilayer materials Open
View article: Understanding and predicting trends in adsorption energetics on monolayer transition metal dichalcogenides
Understanding and predicting trends in adsorption energetics on monolayer transition metal dichalcogenides Open
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently been shown to demonstrate non-volatile resistive switching (NVRS), offering significant advantages such as high-density integration and low energy consumption due t…
View article: Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor
Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor Open
Two-dimensional (2D) monolayers have gained significant attention as ultrathin active layers for fabricating atomic-scale memristor (atomristor) structures due to their crystalline structures and clean surfaces. This study reports on the g…
View article: Non‐Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold (Adv. Sci. 1/2025)
Non‐Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold (Adv. Sci. 1/2025) Open
2D Tellurium Goes Memristive 2D tellurium showcases remarkable characteristics, including simplicity in its chemistry, structure, and synthesis, making it ideal for a wide range of applications. In article number 2406703, Christian Martell…
View article: Tensile and Shear Interactions for Graphene Grown on Sapphire
Tensile and Shear Interactions for Graphene Grown on Sapphire Open
View article: <p>Effect of pH and Annealing Temperature on the Properties of Cuprous Oxide (Cu₂O) Thin Film Deposited Via Sol-Gel Dip-Coating Method</p>
Effect of pH and Annealing Temperature on the Properties of Cuprous Oxide (Cu₂O) Thin Film Deposited Via Sol-Gel Dip-Coating Method Open
View article: Understanding and predicting trends in adsorption energetics on monolayer transition metal dichalcogenides
Understanding and predicting trends in adsorption energetics on monolayer transition metal dichalcogenides Open
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently been shown to demonstrate non-volatile resistive switching (NVRS), offering significant advantages such as high-density integration and low energy consumption due t…
View article: Skin Controlled Electronic and Neuromorphic Tattoos
Skin Controlled Electronic and Neuromorphic Tattoos Open
Wearable human activity sensors developed in the past decade show a distinct trend of becoming thinner and more imperceptible while retaining their electrical qualities, with graphene e-tattoos, as the ultimate example. A persistent challe…
View article: Single-crystal hBN Monolayers from Aligned Hexagonal Islands
Single-crystal hBN Monolayers from Aligned Hexagonal Islands Open
View article: Non‐Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold
Non‐Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold Open
Two‐dimensional (2D) materials are promising for resistive switching in neuromorphic and in‐memory computing, as their atomic thickness substantially improve the energetic budget of the device and circuits. However, many 2D resistive switc…
View article: Light-driven C–H activation mediated by 2D transition metal dichalcogenides
Light-driven C–H activation mediated by 2D transition metal dichalcogenides Open
View article: The 3D Monolithically Integrated Hardware Based Neural System with Enhanced Memory Window of the Volatile and Non‐Volatile Devices
The 3D Monolithically Integrated Hardware Based Neural System with Enhanced Memory Window of the Volatile and Non‐Volatile Devices Open
3D neuromorphic hardware system is first demonstrated in neuromorphic application as on‐chip level by integrating array devices with CMOS circuits after wafer bonding (WB) and interconnection process. The memory window of synaptic device i…
View article: Nanocrystalline Boron Nitride Coating for High Conductivity, Low Temperature Proton Exchange Membrane Fuel Cells
Nanocrystalline Boron Nitride Coating for High Conductivity, Low Temperature Proton Exchange Membrane Fuel Cells Open
Hydrogen fuel cells based on proton exchange membrane (PEM) technology are promising as an alternative to fossil fuel-based energy. Conventional PEMFC technology is operated at fully humidified conditions in a narrow temperature range (~ 8…
View article: A non-invasive approach to skin cancer diagnosis via graphene electrical tattoos and electrical impedance tomography
A non-invasive approach to skin cancer diagnosis via graphene electrical tattoos and electrical impedance tomography Open
Objective. Making up one of the largest shares of diagnosed cancers worldwide, skin cancer is also one of the most treatable. However, this is contingent upon early diagnosis and correct skin cancer-type differentiation. Currently, methods…
View article: Non-volatile resistive switching in nanoscaled elemental tellurium by vapor transport deposition on gold
Non-volatile resistive switching in nanoscaled elemental tellurium by vapor transport deposition on gold Open
Two-dimensional (2D) materials are highly promising as resistive switching materials for neuromorphic and in-memory computing owing to their fascinating properties derived from their low thickness. However, most of the reported 2D resistiv…
View article: Synaptic Characteristics of Fully Depleted Silicon‐on‐Insulator Metal‐Oxide‐Semiconductor Field‐Effect Transistors and Synapse‐Neuron Arrayed Neuromorphic Hardware System
Synaptic Characteristics of Fully Depleted Silicon‐on‐Insulator Metal‐Oxide‐Semiconductor Field‐Effect Transistors and Synapse‐Neuron Arrayed Neuromorphic Hardware System Open
A fully depleted silicon‐on‐insulator (FDSOI) metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) device is investigated as for an electronic synapse emulating the synaptic functions of the human brain with stable characteristics.…
View article: Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer
Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer Open
Recently, we demonstrated the nonvolatile resistive switching effects of metal-insulator-metal (MIM) atomristor structures based on two-dimensional (2D) monolayers. However, there are many remaining combinations between 2D monolayers and m…
View article: Emerging memory electronics for non-volatile radiofrequency switching technologies
Emerging memory electronics for non-volatile radiofrequency switching technologies Open
View article: Light-driven C-H activation mediated by 2D transition metal dichalcogenides
Light-driven C-H activation mediated by 2D transition metal dichalcogenides Open
C-H bond activation enables the facile synthesis of new chemicals. While C-H activation in short-chain alkanes has been widely investigated, it remains largely unexplored for long-chain organic molecules. Here, we report light-driven C-H a…
View article: Ferroelectric Mxene-Assisted Bifeo3 Based Free-Standing Memristors for Multifunctional Non-Volatile Memory Storage
Ferroelectric Mxene-Assisted Bifeo3 Based Free-Standing Memristors for Multifunctional Non-Volatile Memory Storage Open
View article: Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In<sub>2</sub>Se<sub>3</sub>
Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In<sub>2</sub>Se<sub>3</sub> Open
The layered semiconductor In 2 Se 3 has a low temperature crystalline–crystalline (α → β) phase transformation with distinct electrical properties that make it a promising candidate for phase change memory. Here, using scanning tunneling m…
View article: Biocompatible Graphene Transistors as Artificial Synapses, Neurons, and Dendrites.
Biocompatible Graphene Transistors as Artificial Synapses, Neurons, and Dendrites. Open
View article: Graphene-Based Artificial Dendrites for Bio-Inspired Learning in Spiking Neuromorphic Systems
Graphene-Based Artificial Dendrites for Bio-Inspired Learning in Spiking Neuromorphic Systems Open
Analog neuromorphic computing systems emulate the parallelism and connectivity of the human brain, promising greater expressivity and energy efficiency compared to digital systems. Though many devices have emerged as candidates for artific…
View article: Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications
Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications Open
Two-dimensional (2D) material research is rapidly evolving to broaden the spectrum of emergent 2D systems. Here, we review recent advances in the theory, synthesis, characterization, device, and quantum physics of 2D materials and their he…