D.W. Tu
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View article: The First 0.15um MHEMT 6 ”GaAs Foundry Service: Highly Reliable Process for 3 V Drain Bias Operations
The First 0.15um MHEMT 6 ”GaAs Foundry Service: Highly Reliable Process for 3 V Drain Bias Operations Open
Lattice matched InAlAs/InGaAs/InP HEMTs have performance advantages over more commonly used GaAs PHEMTs due to the high electron velocity and carrier density >1 @. However,manufacturing these devices at high production level is difficult d…