Dekang Chen
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View article: Thin absorber AlInAsSb SACM APDs with photon-trapping gratings for eSWIR applications
Thin absorber AlInAsSb SACM APDs with photon-trapping gratings for eSWIR applications Open
High-sensitivity photodetectors with a high signal-to-noise ratio are essential for numerous infrared applications. While avalanche photodiodes (APDs) offer high internal gain, their performance is limited by high dark current in the narro…
View article: InGaAs/AlInAsSb avalanche photodiodes with low noise and strong temperature stability
InGaAs/AlInAsSb avalanche photodiodes with low noise and strong temperature stability Open
High-sensitivity avalanche photodiodes (APDs) are used to amplify weak optical signals in a wide range of applications, including telecommunications, data centers, spectroscopy, imaging, light detection and ranging, medical diagnostics, an…
View article: Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications
Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications Open
The fast development of mid-wave infrared photonics has increased the demand for high-performance photodetectors that operate in this spectral range. However, the signal-to-noise ratio, regarded as a primary figure of merit for mid-wave in…
View article: Determination of the background doping polarity for unintentionally doped AlGaAsSb and AlInAsSb avalanche photodiodes on InP substrates
Determination of the background doping polarity for unintentionally doped AlGaAsSb and AlInAsSb avalanche photodiodes on InP substrates Open
Background doping polarity is a critical design parameter for the performance of many optoelectronic devices, including avalanche photodiodes. We have applied a technique by using capacitance–voltage (CV) measurements on double mesa struct…
View article: Effect of Cu Substitution and Heat Treatment on Phase Formation and Magnetic Properties of Sm12Co88−xCux Melt-Spun Ribbons
Effect of Cu Substitution and Heat Treatment on Phase Formation and Magnetic Properties of Sm12Co88−xCux Melt-Spun Ribbons Open
The phase structure and microstructure of Sm12Co88−xCux (x = 0, 2, 4, 6, 8, 10; at.%) as-cast alloys and melt-spun ribbons prepared via the arc-melting method and melt-spun technology were studied experimentally by X-ray diffraction (XRD) …
View article: Frequency behavior of AlInAsSb nBn photodetectors and the development of an equivalent circuit model
Frequency behavior of AlInAsSb nBn photodetectors and the development of an equivalent circuit model Open
We report the frequency response of Al 0.3 InAsSb/Al 0.7 InAsSb nBn photodetectors. The 3-dB bandwidth of the devices varies from ∼ 150 MHz to ∼ 700 MHz with different device diameters and saturates with bias voltage immediately after the …
View article: Room-temperature bandwidth of 2-μm AlInAsSb avalanche photodiodes
Room-temperature bandwidth of 2-μm AlInAsSb avalanche photodiodes Open
We investigate the room-temperature bandwidth performance of AlInAsSb avalanche photodiodes under 2-μm illumination. Parameter characterization denotes RC-limited performance. While measurements indicate a maximum gain-bandwidth product of…
View article: Efficient absorption enhancement approaches for AlInAsSb avalanche photodiodes for 2-μm applications
Efficient absorption enhancement approaches for AlInAsSb avalanche photodiodes for 2-μm applications Open
Recently, advances in imaging and LIDAR applications have stimulated the development of high-sensitivity receivers that operate at wavelengths of ≥ 2 µm, which has driven research on avalanche photodiodes (APDs) that operate in that spectr…
View article: Terrace morphology on fused silica surfaces by Ar+ ion bombardment with Mo co-deposition
Terrace morphology on fused silica surfaces by Ar+ ion bombardment with Mo co-deposition Open
The morphology evolution of self-organized nanopatterns induced during Ar+ ion bombardment (IB) with Mo co-deposition on fused silica (SiO2) surfaces at different incidence angles and fluences was investigated by using atomic force microsc…