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View article: Electric field-tunable ferromagnetism in a van der Waals semiconductor up to room temperature
Electric field-tunable ferromagnetism in a van der Waals semiconductor up to room temperature Open
Ferromagnetic semiconductors, coupling charge transport and magnetism via electrical means, show great promise for spin-based logic devices. Despite decades of efforts to achieve such co-functionality, maintaining ferromagnetic order at ro…
View article: Superior Current Spreading in InGaN Green Micro-LEDs Achieved by Hexagonal Mesa Engineering
Superior Current Spreading in InGaN Green Micro-LEDs Achieved by Hexagonal Mesa Engineering Open
To address the challenge of low external quantum efficiency (EQE) in green micro-light-emitting diodes (micro-LEDs), we systematically investigated the effects of circular, square, and hexagonal mesa geometries. Through comprehensive fabri…
View article: Superlative spin transport of holes in ultra-thin black phosphorus
Superlative spin transport of holes in ultra-thin black phosphorus Open
The development of energy-efficient spin-based hybrid devices that can perform functions such as logic, communication, and storage requires the ability to control and transport highly polarized spin currents over long distances in semicond…
View article: Local Avalanche Photodetectors Driven by Lightning-rod Effect and Surface Plasmon Excitations
Local Avalanche Photodetectors Driven by Lightning-rod Effect and Surface Plasmon Excitations Open
Sensitive avalanche photodetectors (APDs) that operate within the ultraviolet spectrum are critically required for applications in detecting fire and deep-space exploration. However, the development of such devices faces significant challe…
View article: Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC
Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC Open
This article investigates the radiation effects on as-deposited and annealed AlN films on 4H-SiC substrates under gamma-rays. The AlN films are prepared using plasma-enhanced-atomic-layer-deposition on an n-type 4H-SiC substrate. The AlN/4…
View article: Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide
Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide Open
The co-existence of ferromagnetism and superconductivity becomes possible through unconventional pairing in the superconducting state. Such materials are exceedingly rare in solid-state systems but are promising platforms to explore topolo…
View article: Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide
Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide Open
The co-existence of ferromagnetism and superconductivity becomes possible through unconventional pairing in the superconducting state. Such materials are exceedingly rare in solid-state systems but are promising platforms to explore topolo…
View article: Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation
Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation Open
Thermal oxidation and hydrogen annealing were applied on a 100 μm thick Al-doped p-type 4H-SiC epitaxial wafer to modulate the minority carrier lifetime, which was investigated by microwave photoconductive decay (μ-PCD). The minority carri…
View article: Heteromoiré Engineering on Magnetic Bloch Transport in Twisted Graphene Superlattices
Heteromoiré Engineering on Magnetic Bloch Transport in Twisted Graphene Superlattices Open
Localized electrons subject to applied magnetic fields can restart to propagate freely through the lattice in delocalized magnetic Bloch states (MBSs) when the lattice periodicity is commensurate with the magnetic length. Twisted graphene …
View article: Replication Data for: Achieving ultrafast hole transfer at the monolayer MoS2 and CH3NH3PbI3 perovskite interface by defect engineering
Replication Data for: Achieving ultrafast hole transfer at the monolayer MoS2 and CH3NH3PbI3 perovskite interface by defect engineering Open
The performance of a photovoltaic device is strongly dependent on the light harvesting properties of the absorber layer as well as the charge separation at the donor/acceptor interfaces.Atomically thin two-dimensional transition metal dich…
View article: Mo-Terminated Edge Reconstructions in Nanoporous Molybdenum Disulfide Film
Mo-Terminated Edge Reconstructions in Nanoporous Molybdenum Disulfide Film Open
The catalytic and magnetic properties of molybdenum disulfide (MoS2) are significantly enhanced by the presence of edge sites. One way to obtain a high density of edge sites in a two-dimensional (2D) film is by introducing porosity. Howeve…