Dheemahi Rao
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View article: Thermionic Emission in Artificially Structured Single‐Crystalline Elemental Metal/Compound Semiconductor Superlattices
Thermionic Emission in Artificially Structured Single‐Crystalline Elemental Metal/Compound Semiconductor Superlattices Open
Metal/semiconductor superlattices represent a fascinating frontier in materials science and nanotechnology, where alternating layers of metals and semiconductors are precisely engineered at the atomic and nano‐scales. Traditionally, epitax…
View article: Electron confinement–induced plasmonic breakdown in metals
Electron confinement–induced plasmonic breakdown in metals Open
Plasmon resonance represents the collective oscillation of free electron gas density and enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the classical Drude model describes plasmonic excitation, wherein p…
View article: Dominant Scattering Mechanisms in Limiting the Electron Mobility of Scandium Nitride
Dominant Scattering Mechanisms in Limiting the Electron Mobility of Scandium Nitride Open
Electron mobility in nitride semiconductors is limited by electron-phonon, defect, grain-boundary, and dislocation scatterings. Scandium nitride (ScN), an emerging rocksalt indirect bandgap semiconductor, exhibits varying electron mobiliti…
View article: Electron Confinement-Induced Plasmonic Breakdown in Metals
Electron Confinement-Induced Plasmonic Breakdown in Metals Open
Plasmon resonance in metals represents the collective oscillation of the free electron gas density and enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the classical Drude model describes the plasmonic exc…
View article: Reversal of Band-Ordering Leads to High Hole Mobility in Strained <i>p</i>-type Scandium Nitride
Reversal of Band-Ordering Leads to High Hole Mobility in Strained <i>p</i>-type Scandium Nitride Open
Low hole mobility of nitride semiconductors is a significant impediment to realizing their high-efficiency device applications. Scandium nitride (ScN), an emerging rocksalt indirect band gap semiconductor, suffers from low hole mobility. U…
View article: Scandium Nitride as a Gateway III‐Nitride Semiconductor for both Excitatory and Inhibitory Optoelectronic Artificial Synaptic Devices
Scandium Nitride as a Gateway III‐Nitride Semiconductor for both Excitatory and Inhibitory Optoelectronic Artificial Synaptic Devices Open
Traditional computation based on von Neumann architecture is limited by time and energy consumption due to data transfer between the storage and the processing units. The von Neumann architecture is also inefficient in solving unstructured…
View article: Scandium Nitride as a Gateway III-Nitride Semiconductor for Optoelectronic Artificial Synaptic Devices
Scandium Nitride as a Gateway III-Nitride Semiconductor for Optoelectronic Artificial Synaptic Devices Open
Traditional computation based on von Neumann architecture is limited by the time and energy consumption due to data transfer between the storage and the processing units. The von Neumann architecture is also inefficient in solving unstruct…
View article: Discovery of Polar Semiconducting Scandium Nitride as an Infrared Plasmon and Phonon-Polaritonic Material
Discovery of Polar Semiconducting Scandium Nitride as an Infrared Plasmon and Phonon-Polaritonic Material Open
Interaction of light with collective charge oscillations termed as plasmon-polariton and with polar lattice vibrations termed phonon-polariton is a new frontier in nano-photonics. Traditionally doped-semiconductors and conducting metal oxi…
View article: Synthesis and study of ScN thin films
Synthesis and study of ScN thin films Open
To contemplate an alternative approach for the minimization of diffusion at high temperature depositions, present findings impart viability of room-temperature deposited reactively sputtered ScN thin film samples. The adopted room temperat…
View article: Detailed Study of Reactively Sputtered ScN Thin Films at Room Temperature
Detailed Study of Reactively Sputtered ScN Thin Films at Room Temperature Open
View article: MBE deposited scandium nitride (ScN) for thermoelectric applications
MBE deposited scandium nitride (ScN) for thermoelectric applications Open
Resumen del trabajo presentado en el Virtual Conference on Thermoelectrics (VCT), celebrado online del 21 al 23 de julio de 2020