Dingkun Ren
YOU?
Author Swipe
Mapping Charge Recombination and the Effect of Point Defect Insertion in Gallium Arsenide Nanowire Heterojunctions Open
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but locating electronic point defects in bulk semiconductors has previously been impossible. Here we apply scanning transmission electron microscopy…
High-efficiency ultrafast optical-to-electrical converters based on InAs nanowire-plasmonic arrays Open
There has been a growing interest in developing high-efficiency ultrafast optical-to-electrical converters for advanced imaging and sensing applications. Here, we propose a three-dimensional (3D) plasmonic platform based on InAs nanowire a…
Comprehensive Three-dimensional Computational Model Enables Design of Nanostructured Infrared Detectors Open
Due to the unique three-dimensional (3-D) geometries of nanowire-i.e., large surface-to-volume ratios and smaller cross-sections at the nanowire-substrate interfaces-their carrier dynamics are much more complicated than those of thin films…
Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 25 µm Open
e d fo r p u blic a tio n.Cit a tio n fo r fin al p u blis h e d ve r sio n: R e n, Di n g k u n, F a r r ell, Ala n C. a n d H uff a k er, Di a n a L. 2 0 1 8. Axial
Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium Open
We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium (TEGa) precursor. Two-temperature growth of GaAs nanowires-nucle…
Nanowire Optoelectronics at Infrared: Modeling, Epitaxy, and Devices Open
Bottom-up semiconductor nanowires and their arrays have been frequently highlighted as building blocks for next-generation optoelectronic devices. Compared with planar thin films, vertical nanowires have unique properties, namely three-dim…
Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb Open
III-(As, Sb) alloys are building blocks for various advanced optoelectronic devices, but the growth of their ternary or quaternary materials are commonly limited by spontaneous formation of clusters and phase separations during alloying. R…