Dingyu Ma
YOU?
Author Swipe
View article: Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy Open
We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) In x Ga 1−x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular b…
View article: MBE growth of entire-indium-composition-tunable In<italic><sub>x</sub></italic>Ga<sub>1-<italic>x</italic></sub>N alloy
MBE growth of entire-indium-composition-tunable In<italic><sub>x</sub></italic>Ga<sub>1-<italic>x</italic></sub>N alloy Open
资助项目 摘要 III 族氮化物 In x Ga 1x N 合金为直接带隙半导体, 其禁带宽度随着 In 组分变化从 3.43 eV(GaN)到 0.64 eV(InN)连续可调, 波长范围覆盖了 0.3-1.9μm, 具有电子饱和速度高和光学吸收系数大等特点, 是制备高效 率全光谱太阳能电池和白光照明器件的理想材料.由于缺少合适的衬底, InN 和 In x Ga 1x N 薄膜通常生长在 蓝宝石或 GaN 模板上.本论文综述了采用 MBE 方法, 在蓝宝石衬底和 G…