Dominique Bougeard
YOU?
Author Swipe
View article: Active Noise Reduction in Si/SiGe Gated Quantum Dots
Active Noise Reduction in Si/SiGe Gated Quantum Dots Open
Solid-state quantum technologies such as quantum dot qubits and quantum electrical metrology circuits rely on quantum phenomena at ultra-low energies, making them highly sensitive to various forms of environmental noise. Conventional passi…
View article: Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices Open
Si/SiGe heterostructures on bulk Si substrates have been shown to host high fidelity electron spin qubits. Building a scalable quantum processor would, however, benefit from further improvement of critical material properties such as the v…
View article: High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line Open
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS manufactu…
View article: Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices
Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices Open
Gate-tunable semiconductor nanosystems are getting more and more important in the realization of quantum circuits. While such devices are typically cooled to operation temperature with zero bias applied to the gate, biased cooling correspo…
View article: Optimizing time-of-flight secondary ion mass spectrometry depth profiles of semiconductor heterostructures
Optimizing time-of-flight secondary ion mass spectrometry depth profiles of semiconductor heterostructures Open
The continuous technological development of electronic devices and the introduction of new materials lead to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on optimiz…
View article: Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures
Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures Open
This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal budge…
View article: Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope‐Purified Silicon Quantum Wells
Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope‐Purified Silicon Quantum Wells Open
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope concentration depth profi…
View article: Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices for quantum circuit applications
Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices for quantum circuit applications Open
Gate-tunable semiconductor nanosystems are getting more and more important in the realization of quantum circuits. While such devices are typically cooled to operation temperature with zero bias applied to the gate, biased cooling correspo…
View article: Sensing dot with high output swing for scalable baseband readout of spin qubits
Sensing dot with high output swing for scalable baseband readout of spin qubits Open
A crucial requirement for quantum computing, in particular for scalable\nquantum computing and error correction, is a fast and high-fidelity qubit\nreadout. For semiconductor based qubits, one limiting factor for local\nlow-power signal am…
View article: Optimizing ToF-SIMS Depth Profiles of Semiconductor Heterostructures
Optimizing ToF-SIMS Depth Profiles of Semiconductor Heterostructures Open
The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on optimi…
View article: Experimental and theoretical studies on self-diffusion in amorphous germanium
Experimental and theoretical studies on self-diffusion in amorphous germanium Open
Self-diffusion in amorphous germanium is studied at temperatures between 325 and 370 °C utilizing amorphous isotopically controlled germanium multilayer structures. The isotope multilayer is epitaxially grown on a single crystalline german…
View article: Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells Open
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profile…
View article: Nonlinear helicity anomalies in the cyclotron resonance photoresistance of two-dimensional electron systems
Nonlinear helicity anomalies in the cyclotron resonance photoresistance of two-dimensional electron systems Open
Our studies of the cyclotron resonance (CR) photoresistance in GaAs-based two-dimensional electron systems (2DES) reveal an anomalously low sensitivity to the helicity of the incoming circularly polarized terahertz radiation. We find that …
View article: Mode-multiplexing deep-strong light-matter coupling
Mode-multiplexing deep-strong light-matter coupling Open
View article: Sculpting ultrastrong light–matter coupling through spatial matter structuring
Sculpting ultrastrong light–matter coupling through spatial matter structuring Open
The central theme of cavity quantum electrodynamics is the coupling of a single optical mode with a single matter excitation, leading to a doublet of cavity polaritons which govern the optical properties of the coupled structure. Especiall…
View article: Nonlinear helicity anomalies in the cyclotron resonance photoresistance of two-dimensional electron systems
Nonlinear helicity anomalies in the cyclotron resonance photoresistance of two-dimensional electron systems Open
Our studies of the cyclotron resonance (CR) photoresistance in GaAs-based two-dimensional electron systems (2DES) reveal an anomalously low sensitivity to the helicity of the incoming circularly polarized terahertz radiation. We find that …
View article: Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K Open
Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, c…
View article: Tailoring potentials by simulation-aided design of gate layouts for spin-qubit applications
Tailoring potentials by simulation-aided design of gate layouts for spin-qubit applications Open
Gate layouts of spin-qubit devices are commonly adapted from previous successful devices. As qubit numbers and device complexity increase, modeling new device layouts and optimizing for yield and performance become necessary. The simulatio…
View article: Mode-multiplexing deep-strong light-matter coupling
Mode-multiplexing deep-strong light-matter coupling Open
Dressing quantum states of matter with virtual photons can create exotic effects ranging from vacuum-field modified transport to polaritonic chemistry, and may drive strong squeezing or entanglement of light and matter modes. The establish…
View article: Controlled Rotation of Electrically Injected Spins in a Nonballistic Spin-Field-Effect Transistor
Controlled Rotation of Electrically Injected Spins in a Nonballistic Spin-Field-Effect Transistor Open
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin-field-effect transistor (sFET). To date, there have been only a few rep…
View article: Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications
Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications Open
Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulat…
View article: Controlled rotation of electrically injected spins in a non-ballistic spin field-effect transistor
Controlled rotation of electrically injected spins in a non-ballistic spin field-effect transistor Open
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few rep…
View article: Interfacial Tuning of Anisotropic Gilbert Damping
Interfacial Tuning of Anisotropic Gilbert Damping Open
Tuning of the anisotropic Gilbert damping Δα has been realized in ultrathin single-crystalline Fe films grown on GaAs (001). A nonmonotonic dependence of Δα on film thickness t is observed upon varying t about 10 ML (∼1.4 nm). Δα increases…
View article: Sculpting ultrastrong light-matter coupling through spatial matter structuring
Sculpting ultrastrong light-matter coupling through spatial matter structuring Open
The central theme of cavity quantum electrodynamics is the coupling of a single optical mode with a single matter excitation, leading to a doublet of cavity polaritons which govern the optical properties of the coupled structure. Especiall…
View article: Robust and fast post-processing of single-shot spin qubit detection events with a neural network
Robust and fast post-processing of single-shot spin qubit detection events with a neural network Open
Dataset to the paper 'Robust and fast post-processing of single-shot spin qubit detection events with a neural network'
View article: Robust and fast post-processing of single-shot spin qubit detection events with a neural network
Robust and fast post-processing of single-shot spin qubit detection events with a neural network Open
Dataset to the paper 'Robust and fast post-processing of single-shot spin qubit detection events with a neural network'
View article: Exciton fine structure splitting and linearly polarized emission in strained transition-metal dichalcogenide monolayers
Exciton fine structure splitting and linearly polarized emission in strained transition-metal dichalcogenide monolayers Open
We study theoretically effects of an anisotropic elastic strain on the exciton energy spectrum fine structure and optical selection rules in atom-thin crystals based on transition-metal dichalcogenides. The presence of strain breaks the ch…
View article: Circular polarization immunity of the cyclotron resonance photoconductivity in two-dimensional electron systems
Circular polarization immunity of the cyclotron resonance photoconductivity in two-dimensional electron systems Open
Studying the cyclotron resonance (CR)-induced photoconductivity in GaAs and HgTe two-dimensional electron structures, we observed an anomalous photoresponse for the CR-inactive geometry being of almost the same magnitude as the CR-active o…
View article: Scalable high-repetition-rate sub-half-cycle terahertz pulses from spatially indirect interband transitions
Scalable high-repetition-rate sub-half-cycle terahertz pulses from spatially indirect interband transitions Open
View article: Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy
Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy Open
We report GaAs/AlGaAs nanowires in the one-dimensional (1D) quantum limit. The ultrathin wurtzite GaAs cores between 20-40\,nm induce large confinement energies of several tens of meV, allowing us to experimentally resolve up to four well …