Douglas E. Wolfe
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View article: Room Temperature Rejuvenation Technology for Irradiated Gallium Nitride Transistors
Room Temperature Rejuvenation Technology for Irradiated Gallium Nitride Transistors Open
High‐temperature annealing remains the primary technique for mitigating radiation damage in electronic devices. In this study, a novel alternative is demonstrated that is capable of operating at room temperature within minutes, specificall…
View article: Repeated rejuvenation of SiC MOSFETs for unprecedented ionizing radiation resilience
Repeated rejuvenation of SiC MOSFETs for unprecedented ionizing radiation resilience Open
Resilience to ionizing radiation is crucial for electronic devices in space and nuclear applications. Traditionally, this is achieved through new design, materials, shielding, or redundancy strategies. In this study, we demonstrate a new a…
View article: Variable-Temperature Plasmonic High-Entropy Carbides
Variable-Temperature Plasmonic High-Entropy Carbides Open
Effective thermal management at variable and extreme temperatures face limitations for the development of novel energy and aerospace applications. Plasmonic approaches, shown to be capable of tailoring black-body emission, could be effecti…
View article: Room temperature annealing of gamma irradiated SiC JFETs using electron wind force
Room temperature annealing of gamma irradiated SiC JFETs using electron wind force Open
Electron wind force (EWF) is a mechanical stimulus that can transport mass in metallic interconnects, but its effectiveness in mobilizing defects in semiconductors is relatively less studied. We explored the potential of EWF annealing as a…
View article: Thermal Stereolithography of SiC-Loaded Acrylate Resins with Polymer-Derived Ceramic Infiltration
Thermal Stereolithography of SiC-Loaded Acrylate Resins with Polymer-Derived Ceramic Infiltration Open
The implementation of stereolithography (SLA) for fabricating 3D-structured polymer-derived ceramics (PDCs) has greatly improved the resolution, manufacturing potential, and widespread capability to produce complicated component geometries…
View article: High temperature operation and failure of Ga2O3 Schottky barrier diodes: An <i>in situ</i> TEM study
High temperature operation and failure of Ga2O3 Schottky barrier diodes: An <i>in situ</i> TEM study Open
The β-polymorph gallium oxide (Ga2O3) is a promising material for next generation power electronics in extreme environments due to its ultra-wide bandgap with a high theoretical breakdown electric field. However, there is a gap between the…
View article: Utilization Of Periodic Nanostructures To Improve Detection Efficiency And Time/Energy Resolution Of Inorganic Scintillators
Utilization Of Periodic Nanostructures To Improve Detection Efficiency And Time/Energy Resolution Of Inorganic Scintillators Open
Inorganic scintillators are commonly used in various radiation detection applications due to their excellent energy resolution, reliable performance, relatively low cost, and high detection efficiency. However, many inorganic scintillators…
View article: Improving radiation tolerance with room temperature annealing of pre-existing defects
Improving radiation tolerance with room temperature annealing of pre-existing defects Open
Pre-existing defects in semiconductor devices can act as nucleation sites for radiation damage. Defects generated from mismatches in lattice constant, stiffness and thermal expansion are difficult to eliminate with thermal annealing. We pr…
View article: Bipolar HiPIMS kick‐pulse for high hardness in high‐entropy boride thin films
Bipolar HiPIMS kick‐pulse for high hardness in high‐entropy boride thin films Open
We report a microhardness indentation study for multicomponent refractory metal boride thin films that belong to the family of high‐entropy ceramics exhibiting superior hardness and high temperature properties. We focus on the nominally eq…
View article: Improving radiation resilience of zener diodes through preemptive and restorative electron wind force annealing
Improving radiation resilience of zener diodes through preemptive and restorative electron wind force annealing Open
Semiconductor devices contain defects and localized mechanical stress even in their pristine states, persisting after post-fabrication annealing. We hypothesize that these pre-existing conditions, with their lower threshold energy for defe…
View article: Growth and Performance of Perovskite Semiconductor CsPbX3 (X = Cl, Br, I, or Mixed Halide) for Detection and Imaging Applications
Growth and Performance of Perovskite Semiconductor CsPbX3 (X = Cl, Br, I, or Mixed Halide) for Detection and Imaging Applications Open
The material family halide perovskites has been critical in recent room-temperature radiation detection semiconductor research. Cesium lead bromide (CsPbBr3) is a halide perovskite that exhibits characteristics of a semiconductor that woul…
View article: Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors
Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors Open
Multi-material, multi-layered systems such as AlGaN/GaN high electron mobility transistors (HEMTs) contain residual mechanical stresses that arise from sharp contrasts in device geometry and materials parameters. These stresses, which can …
View article: Localized Stress Effects on the Single Event Effects Sensitivity of Microelectronics
Localized Stress Effects on the Single Event Effects Sensitivity of Microelectronics Open
Understanding the single event effects (SEE) sensitivity of microelectronic devices and circuits is essential for long-term mission success in ionizing radiation environments. SEEs occur when a single ionizing particle strikes a device wit…
View article: Temperature-induced degradation of GaN HEMT: An <i>in situ</i> heating study
Temperature-induced degradation of GaN HEMT: An <i>in situ</i> heating study Open
High-power electronics, such as GaN high electron mobility transistors (HEMTs), are expected to perform reliably in high-temperature conditions. This study aims to gain an understanding of the microscopic origin of both material and device…
View article: Hardness of single phase high entropy carbide ceramics with different compositions
Hardness of single phase high entropy carbide ceramics with different compositions Open
Five high entropy carbide ceramics, (Hf0.2,Nb0.2,Ta0.2,Ti0.2,Zr0.2)C, (Cr0.2,Hf0.2,Ta0.2,Ti0.2,Zr0.2)C, (Hf0.2,Mo0.2,Ta0.2,Ti0.2,Zr0.2)C, (Hf0.2,Ta0.2,Ti0.2,W0.2,Zr0.2)C, and (Hf0.2,Mo0.2,Ti0.2,W0.2,Zr0.2)C, were synthesized by carbotherma…
View article: Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation
Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation Open
Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential…
View article: Rejuvenation of degraded Zener diodes with the electron wind force
Rejuvenation of degraded Zener diodes with the electron wind force Open
In this study, we explore the rejuvenation of a Zener diode degraded by high electrical stress, leading to a leftward shift, and broadening of the Zener breakdown voltage knee, alongside a 57% reduction in forward current. We employed a no…
View article: A super‐hard high entropy boride containing Hf, Mo, Ti, V, and W
A super‐hard high entropy boride containing Hf, Mo, Ti, V, and W Open
Super‐hard (Hf,Mo,Ti,V,W)B 2 was synthesized by boro‐carbothermal reduction and densified by spark plasma sintering. This composition was produced for the first time as a single‐phase ceramic in the present research. The optimized ceramic …
View article: Machine Learned Interatomic Potentials for Ternary Carbides trained on the AFLOW Database
Machine Learned Interatomic Potentials for Ternary Carbides trained on the AFLOW Database Open
Large density functional theory (DFT) databases are a treasure trove of energies, forces and stresses that can be used to train machine learned interatomic potentials for atomistic modeling. Herein, we employ structural relaxations from th…
View article: Machine Learned Interatomic Potentials for Ternary Carbides trained on the AFLOW Database
Machine Learned Interatomic Potentials for Ternary Carbides trained on the AFLOW Database Open
Large density functional theory (DFT) databases are a treasure trove of energies, forces and stresses that can be used to train machine learned interatomic potentials for atomistic modeling. Herein, we employ structural relaxations from th…
View article: A stochastic encoder using point defect in two-dimensional materials
A stochastic encoder using point defect in two-dimensional materials Open
Defects pose a significant challenge to the reliability of electronic devices, particularly when dealing with scaled dimensions in the silicon microelectronic industry. Consequently, extensive efforts have been made to eliminate these defe…
View article: Nickel Coatings on Ceramic Materials Using Different Diffusion Techniques
Nickel Coatings on Ceramic Materials Using Different Diffusion Techniques Open
Diffusion bonding is a process that has proven effective for the joining of metal to ceramic, but the differences in coefficient of thermal expansion still pose challenges during and after the bonding process. This work details the explora…
View article: Thermal barrier coatings
Thermal barrier coatings Open
High temperature stable thermal barrier coatings useful for substrates that form component parts of engines such as a component from a gas turbine engine exposed to high temperatures are provided. The thermal barrier coatings include a mul…
View article: Improving vertical GaN p–n diode performance with room temperature defect mitigation
Improving vertical GaN p–n diode performance with room temperature defect mitigation Open
Defect mitigation of electronic devices is conventionally achieved using thermal annealing. To mobilize the defects, very high temperatures are necessary. Since thermal diffusion is random in nature, the process may take a prolonged period…
View article: Hydrothermal and Mechanosynthesis of Mixed‐Cation Double Perovskite Scintillators for Radiation Detection
Hydrothermal and Mechanosynthesis of Mixed‐Cation Double Perovskite Scintillators for Radiation Detection Open
This article details work performed on the synthesis and characterization of an inorganic mixed‐cation double halide perovskite, Cs 2 Ag .6 Na .4 In .85 Bi .15 Cl 6 (CANIBIC). Single crystals have been created via a hydrothermal reaction, …