Dawei Wang
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View article: Ultrawide Bandgap Lateral AlN Schottky Barrier Diodes With Graded AlGaN Contact Layer on Single‐Crystal AlN Substrate
Ultrawide Bandgap Lateral AlN Schottky Barrier Diodes With Graded AlGaN Contact Layer on Single‐Crystal AlN Substrate Open
Lateral AlN Schottky barrier diodes with a top graded AlGaN contact layer were demonstrated on single‐crystal AlN substrates, where the Ohmic contact showed nearly linear behaviors with a low contact resistivity of 1.54 × 10 −3 Ω cm 2 . Th…
View article: Quantum phase transitions in driven Fock-state lattices with synthetic gauge fields
Quantum phase transitions in driven Fock-state lattices with synthetic gauge fields Open
Quantum phase transitions (QPTs) typically emerge in the thermodynamic limit, yet a single-atom QPT can arise when it is coupled to a coherently driven cavity, which provides a simple and unique platform to engineer quantum states with qua…
View article: Towards a deeper fundamental understanding of (Al,Sc)N ferroelectric nitrides
Towards a deeper fundamental understanding of (Al,Sc)N ferroelectric nitrides Open
Density Functional Theory (DFT) calculations, within the virtual crystal alloy approximation, are performed, along with the development of a Landau-type model employing a symmetry-allowed analytical expression of the internal energy and ha…
View article: Robust entangled photon generation enabled by single-shot Floquet driving
Robust entangled photon generation enabled by single-shot Floquet driving Open
Quantum emitters driven by resonant two-photon excitation are a leading source for deterministically generated entangled photon pairs, essential for scalable photonic quantum technologies. However, conventional resonant schemes are highly …
View article: Adiabatic topological passage based on coupling of giant atom with two Su-Schrieffer-Heeger chains
Adiabatic topological passage based on coupling of giant atom with two Su-Schrieffer-Heeger chains Open
We study an adiabatic topological passage of two Su-Schrieffer-Heeger (SSH) chains mediated by a giant atom. When two finite SSH chains are in the topological phase and the frequency of the giant atom is equal to the center frequency of th…
View article: All-Optical Ultrafast Arbitrary Rotation of Hole Orbital Qubits with Direct Phase Control
All-Optical Ultrafast Arbitrary Rotation of Hole Orbital Qubits with Direct Phase Control Open
Complete quantum control of a stationary quantum bit embedded in a quantum emitter is crucial for photonic quantum information technologies. Recently, the orbital degree of freedom in optically active quantum dots has emerged as a promisin…
View article: Zak Phase Induced Topological Nonreciprocity
Zak Phase Induced Topological Nonreciprocity Open
Topological physics provides novel insights for designing functional photonic devices, such as magnetic-free optical diodes, which are important in optical engineering and quantum information processing. Past efforts mostly focus on the to…
View article: Ultra‐Weak Polarization‐Strain Coupling Effect Boosts Capacitive Energy Storage
Ultra‐Weak Polarization‐Strain Coupling Effect Boosts Capacitive Energy Storage Open
In pulse power systems, multilayer ceramic capacitors (MLCCs) encounter significant challenges due to the heightened loading electric field ( E ), which can lead to fatigue damage and ultrasonic concussion caused by electrostrictive strain…
View article: Structural Disorder by Octahedral Tilting in Inorganic Halide Perovskites: New Insight with Bayesian Optimization
Structural Disorder by Octahedral Tilting in Inorganic Halide Perovskites: New Insight with Bayesian Optimization Open
Structural disorder is common in metal‐halide perovskites and important for understanding the functional properties of these materials. First‐principles methods can address structure variation on the atomistic scale, but they are often lim…
View article: Integrated Ideal-Bandgap Perovskite/Bulk-Heterojunction Solar Cells with Efficiencies > 24%
Integrated Ideal-Bandgap Perovskite/Bulk-Heterojunction Solar Cells with Efficiencies > 24% Open
Here, the authors report a highly efficient integrated ideal-bandgap perovskite/bulk-heterojunction solar cell (IPBSC) with an inverted architecture, featuring a near infrared (NIR) polymer DTBTI-based bulk-heterojunction (BHJ) layer atop …
View article: A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors
A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors Open
In this paper, we demonstrate a comprehensive study of NF3-based selective etching processes for inner spacer formation and for channel release, enabling stacked horizontal gate-all-around Si nanosheet transistor architectures. A cyclic et…
View article: Optimization of thermo-spin voltage in vertical nanostructures by geometrical means
Optimization of thermo-spin voltage in vertical nanostructures by geometrical means Open
The thermo-spin conversion provides new concepts for further developing the green energy-harvesting technology because spin can be controlled with minimal energy in nanostructures. Through theoretical analysis of thermo-spin generation, tr…
View article: A Ternary Inverter Based on Hybrid Conduction Mechanism of Band-to-Band Tunneling and Drift-Diffusion Process
A Ternary Inverter Based on Hybrid Conduction Mechanism of Band-to-Band Tunneling and Drift-Diffusion Process Open
In this paper, a novel transistor based on a hybrid conduction mechanism of band-to-band tunneling and drift-diffusion is proposed and investigated with the aid of TCAD tools. Besides the on and off states, the proposed device presents an …
View article: Origin of high‐temperature piezoelectric stability and polar nanoregions dynamics in 0.55Bi(Mg <sub>1/2</sub> Ti <sub>1/2</sub> )O <sub>3</sub> –0.45PbTiO <sub>3</sub>
Origin of high‐temperature piezoelectric stability and polar nanoregions dynamics in 0.55Bi(Mg <sub>1/2</sub> Ti <sub>1/2</sub> )O <sub>3</sub> –0.45PbTiO <sub>3</sub> Open
The 0.55Bi(Mg 1/2 Ti 1/2 )O 3 –0.45PbTiO 3 ceramics exhibit notable dielectric anomalies across three temperature ranges. The low‐temperature anomaly is attributed to a reentrant dipole glass‐like relaxor behavior; the mid‐temperature anom…
View article: Optimization of thermo-spin voltage in vertical nanostructures by geometrical means
Optimization of thermo-spin voltage in vertical nanostructures by geometrical means Open
The thermo-spin conversion provides new concepts for further developing the green energy-harvesting technology because spin can be controlled with minimal energy in nanostructures. Through theoretical analysis of thermo-spin generation, tr…
View article: Modeling ferroelectric phase transitions with graph convolutional neural networks
Modeling ferroelectric phase transitions with graph convolutional neural networks Open
Ferroelectric materials are widely used in functional devices, however, it has been a long-standing issue to achieve convenient and accurate theoretical modeling of them. Herein, a noval approach to modeling ferroelectric materials is prop…
View article: High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD
High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD Open
This letter reports the demonstration of Aluminum nitride (AIN) Schottky barrier diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying ch…
View article: Unusual magnetic interaction in CrTe: insights from machine-learning and empirical models
Unusual magnetic interaction in CrTe: insights from machine-learning and empirical models Open
Chromium telluride (CrTe) has received much attention due to its small magnetic anisotropy, which hosts the potential for complex magnetic structures. However, its magnetic properties have been relatively unexplored with numerical simulati…
View article: 3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD
3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD Open
This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics…
View article: Realizing the controllable excitation transfer based on the atom coupling the finite-size Su-Schrieffer-Heeger model
Realizing the controllable excitation transfer based on the atom coupling the finite-size Su-Schrieffer-Heeger model Open
In this paper, we study the interaction between atom and the finite-size Su-Schrieffer-Heeger (SSH) model. We find that when the finite SSH model in the trivial phase, it can be viewed as the atom coupling with the waveguide with the finit…
View article: Suppression of Secondary Electron Emission from Nickel Surface by Graphene Composites Based on First-Principles Method
Suppression of Secondary Electron Emission from Nickel Surface by Graphene Composites Based on First-Principles Method Open
Secondary electron emission (SEE) is a fundamental phenomenon of particle/surface interaction, and the multipactor effect induced by SEE can result in disastrous impacts on the performance of microwave devices. To suppress the SEE-induced …
View article: Large spin splitting and piezoelectricity in a two-dimensional topological insulator Al$_2$SbBi with double-layer honeycomb structure
Large spin splitting and piezoelectricity in a two-dimensional topological insulator Al$_2$SbBi with double-layer honeycomb structure Open
Two-dimensional materials provide remarkable platforms to uncover intriguing quantum phenomena and develop nanoscale devices of versatile applications. Recently, AlSb in the double-layer honeycomb (DLHC) structure was successfully synthesi…
View article: A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors
A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors Open
In this paper, a novel scheme for source/drain-first (S/D-first) full bottom dielectric isolation (BDI), i.e., Full BDI_Last, with integration of a sacrificial Si0.5Ge0.5 layer was proposed and demonstrated in a stacked Si nanosheet gate-a…
View article: Structural disorder by octahedral tilting in inorganic halide perovskites: New insight with Bayesian optimization
Structural disorder by octahedral tilting in inorganic halide perovskites: New insight with Bayesian optimization Open
Structural disorder is common in metal-halide perovskites and important for understanding the functional properties of these materials. First-principles methods can address structure variation on the atomistic scale, but they are often lim…
View article: Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device
Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device Open
In this paper, nanosheet deformation during channel release has been investigated and discussed in Gate-All-Around (GAA) transistors. Structures with different source/drain size and stacked Si nanosheet lengths were designed and fabricated…
View article: A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors
A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors Open
Nanowires with gate-all-around (GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects, and tunneling field effect transistors (TFETs) based …
View article: Mathematical Models for Analyzing COVID-19 Pandemic in Different Regions with Climate factors
Mathematical Models for Analyzing COVID-19 Pandemic in Different Regions with Climate factors Open
Aiming at the Covid-19 pandemic problem, to find out whether the climate factors could affect the development of pandemic, this paper mainly uses mathematical modeling and machine learning to analyze the correlation between climate factors…
View article: Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node
Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node Open
Impacts of source/drain (S/D) recess engineering on the device performance of both the gate-all-around (GAA) nanosheet (NS) field-effect transistor (FET) and FinFET have been comprehensively studied at 5 nm node technology. TCAD simulation…