A. E. Michel
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View article: Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage
Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage Open
A quasi‐vertical gallium nitride (GaN) fin field effect transistor (FinFET) is designed and analyzed to assess the performance of electrical parameters. The device is deployed on a silicon carbide (SiC) substrate and analyzed using technol…